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Details, datasheet, quote on part number:3EZ10D5
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Datasheet text preview:
3EZ4.3D5 Series 3 Watt DO-41 SurmeticE 30 Zener Voltage Regulators
This is a complete series of 3 Watt Zener diodes with limits and excellent operating characteristics that reflect the superior capabilities of siliconoxide passivated junctions. All this in an axiallead, transfermolded plastic package that offers protection in all common environmental conditions.
Specification Features: http://onsemi.com
· · · · ·
Cathode
Anode
Zener Voltage Range 4.3 V to 330 V ESD Rating of Class 3 (>16 KV) per Human Body Model Surge Rating of 98 W @ 1 ms Maximum Limits Guaranteed on up to Six Electrical Parameters Package No Larger than the Conventional 1 Watt Package
AXIAL LEAD CASE 59 PLASTIC
Mechanical Characteristics: CASE: Void free, transfermolded, thermosetting plastic FINISH: All external surfaces are corrosion resistant and leads are
readily solderable
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:
230°C, 1/16 from the case for 10 seconds POLARITY: Cathode indicated by polarity band MOUNTING POSITION: Any
MAXIMUM RATINGS
Rating Max. Steady State Power Dissipation @ TL = 75°C, Lead Length = 3/8 Derate above 75°C Steady State Power Dissipation @ TA = 50°C Derate above 50°C Operating and Storage Temperature Range Symbol PD Value 3 24 PD 1 6.67 TJ, Tstg 65 to +200 Unit W mW/°C W mW/°C °C
MARKING DIAGRAM
L 3EZx xxD5 YYWW
L = Assembly Location 3EZxxxD5 = Device Code = (See Table Next Page) YY = Year WW = Work Week
ORDERING INFORMATION
Device 3EZxxxD5 3EZxxxD5RL* 3EZxxxD5RR1
{
Package Axial Lead Axial Lead Axial Lead Axial Lead
Shipping 2000 Units/Box 6000/Tape & Reel 2000/Tape & Reel 2000/Tape & Reel
3EZxxxD5RR2 }
Polarity band up with cathode lead off first } Polarity band down with cathode lead off first *3EZ8.2D5 and 3EZ220D5 Not Available 6000/Tape & Reel
in
© Semiconductor Components Industries, LLC, 2002
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June, 2002 Rev. 3
Publication Order Number: 3EZ4.3D5/D
3EZ4.3D5 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless
otherwise noted, VF = 1.5 V Max @ IF = 200 mA for all types) Symbol VZ IZT ZZT IZK ZZK IR VR IF VF IZM IR Parameter Reverse Zener Voltage @ IZT Reverse Current Maximum Zener Impedance @ IZT Reverse Current Maximum Zener Impedance @ IZK Reverse Leakage Current @ VR Breakdown Voltage Forward Current Forward Voltage @ IF Maximum DC Zener Current Surge Current @ TA = 25°C VZ VR IR VF IZT V IF I
Zener Voltage Regulator
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3EZ4.3D5 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 1.5 V Max @ IF = 200 mA for all types)
Zener Voltage (Note 2) Device (Note 1) 3EZ4.3D5 3EZ6.2D5 3EZ8.2D5* 3EZ10D5 3EZ13D5 3EZ15D5 3EZ16D5 3EZ18D5 3EZ24D5 3EZ36D5 3EZ39D5 3EZ220D5* 3EZ240D5 3EZ330D5 Device Marking 3EZ4.3D5 3EZ6.2D5 3EZ8.2D5* 3EZ10D5 3EZ13D5 3EZ15D5 3EZ16D5 3EZ18D5 3EZ24D5 3EZ36D5 3EZ39D5 3EZ220D5* 3EZ240D5 3EZ330D5 VZ (Volts) Min 4.09 5.89 7.79 9.50 12.35 14.25 15.2 17.1 22.8 34.2 37.05 209 228 313.5 Nom 4.3 6.2 8.2 10 13 15 16 18 24 36 39 220 240 330 Max 4.52 6.51 8.61 10.5 13.65 15.75 16.8 18.9 25.2 37.8 40.95 231 252 346.5 @ IZT mA 174 121 91 75 58 50 47 42 31 21 19 3.4 3.1 2.3 Zener Impedance (Note 3) ZZT @ IZT W 4.5 1.5 2.3 3.5 4.5 5.5 5.5 6.0 9.0 22 28 1600 1700 2200 ZZK @ IZK W 400 700 700 700 700 700 700 750 750 1000 1000 9000 9000 9000 mA 1 1 0.5 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 Leakage Current IR @ VR mA Max 30 5 5 3 0.5 0.5 0.5 0.5 0.5 0.5 0.5 1 1 1 Volts 1 3 6 7.6 9.9 11.4 12.2 13.7 18.2 27.4 29.7 167 182 251 IZM mA 590 435 330 270 208 180 169 150 112 75 69 12 11 8 IR (Note 4) mA 4.1 3.1 2.44 2.0 1.54 1.33 1.25 1.11 0.83 0.56 0.51 0.09 0.09 0.06
1. TOLERANCE AND TYPE NUMBER DESIGNATION Tolerance designation device tolerance of ±5% are indicated by a "5" suffix. 2. ZENER VOLTAGE (VZ) MEASUREMENT ON Semiconductor guarantees the zener voltage when measured at 40 ms ±10 ms, 3/8 from the diode body. And an ambient temperature of 25°C (+8°C, 2°C) 3. ZENER IMPEDANCE (ZZ) DERIVATION The zener impedance is derived from 60 seconds AC voltage, which results when an AC current having an rms value equal to 10% of the DC zener current (IZT or IZK) is superimposed on IZT or IZK. 4. SURGE CURRENT (IR) NONREPETITIVE The rating listed in the electrical characteristics table is maximum peak, nonrepetitive, reverse surge current of 1/2 square wave or equivalent sine wave pulse of 1/120 second duration superimposed on the test current, IZT, per JEDEC standards. However, actual device capability is as described in Figure 3 of the General Data sheet for Surmetic 30s. *Not Available in the 6000/Tape & Reel. 5 PD, STEADY STATE POWER DISSIPATION (WATTS) 4 3 2 1 0 L = 3/8 L = 1/8
L = LEAD LENGTH TO HEAT SINK
L = 1
0
20
40
60 80 100 120 140 160 TL, LEAD TEMPERATURE (°C)
180
200
Figure 1. Power Temperature Derating Curve
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3EZ4.3D5 Series
JL(t, D) TRANSIENT THERMAL RESISTANCE JUNCTION TO LEAD (°C/W) 30 20 10 7 5 3 2 D =0.5 0.2 0.1 0.05 0.02 0.01 D=0 0.0005 0.001 0.002 0.005 NOTE: BELOW 0.1 SECOND, THERMAL RESPONSE CURVE IS APPLICABLE TO ANY LEAD LENGTH (L). 0.01 0.02 0.05 t, TIME (SECONDS) 0.1 0.2 PPK t2 DUTY CYCLE, D =t1/t2 t1
1 0.7 0.5
SINGLE PULSE DTJL = qJL (t)PPK REPETITIVE PULSES DTJL = qJL (t,D)PPK 0.5 1 2 5 10
0.3 0.0001 0.0002
Figure 2. Typical Thermal Response L, Lead Length = 3/8 Inch
1K PPK , PEAK SURGE POWER (WATTS) 500 300 200 100 50 30 20 10 0.1 0.2 0.3 0.5 1 23 5 10 PW, PULSE WIDTH (ms) 20 30 50 100 3 2 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 TA = 125°C
RECTANGULAR NONREPETITIVE WAVEFORM TJ = 25°C PRIOR TO INITIAL PULSE
IR , REVERSE LEAKAGE (µ Adc) @ VR AS SPECIFIED IN ELEC. CHAR. TABLE
TA = 125°C
0.002 0.001 0.0005 0.0003
1
2
5
10 20 50 100 NOMINAL VZ (VOLTS)
200
400
1000
Figure 3. Maximum Surge Power
Figure 4. Typical Reverse Leakage
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3EZ4.3D5 Series
APPLICATION NOTE Since the actual voltage available from a given zener diode is temperature dependent, it is necessary to determine junction temperature under any set of operating conditions in order to calculate its value. The following procedure is recommended: Lead Temperature, TL, should be determined from:
TL = qLA PD + TA
DTJL is the increase in junction temperature above the lead temperature and may be found from Figure 2 for a train of power pulses (L = 3/8 inch) or from Figure 10 for dc power.
DTJL = qJL PD
qLA is the lead-to-ambient thermal resistance (°C/W) and PD is the power dissipation. The value for qLA will vary and depends on the device mounting method. qLA is generally 3040°C/W for the various clips and tie points in common use and for printed circuit board wiring. The temperature of the lead can also be measured using a thermocouple placed on the lead as close as possible to the tie point. The thermal mass connected to the tie point is normally large enough so that it will not significantly respond to heat surges generated in the diode as a result of pulsed operation once steady-state conditions are achieved. Using the measured value of TL, the junction temperature may be determined by:
TJ = TL + DTJL
For worst-case design, using expected limits of IZ, limits of PD and the extremes of TJ (DTJ) may be estimated. Changes in voltage, VZ, can then be found from:
DV = qVZ DTJ
qVZ, the zener voltage temperature coefficient, is found from Figures 5 and 6. Under high power-pulse operation, the zener voltage will vary with time and may also be affected significantly by the zener resistance. For best regulation, keep current excursions as low as possible. Data of Figure 2 should not be used to compute surge capability. Surge limitations are given in Figure 3. They are lower than would be expected by considering only junction temperature, as current crowding effects cause temperatures to be extremely high in small spots resulting in device degradation should the limits of Figure 3 be exceeded.
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