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Part: BAT54AL
Category:
Discrete
-> Diodes & Rectifiers
-> Schottky Barrier Rectifiers
Description: Schottky Barrier Diode
Company: ON Semiconductor
Datasheet: Download BAT54AL datasheet File size : 38 kB
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Datasheet text preview:
BAT54ALT1
Preferred Device
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited.
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· Extremely Fast Switching Speed · Low Forward Voltage 0.35 Volts (Typ) @ IF = 10 mAdc
30 VOLTS SCHOTTKY BARRIER DETECTOR AND SWITCHING DIODES
ANODE 3 CATHODE 1 2 CATHODE
MAXIMUM RATINGS (TJ = 125°C unless otherwise noted)
Rating Reverse Voltage Forward Power Dissipation @ TA = 25°C Derate above 25°C Forward Current (DC) Junction Temperature Storage Temperature Range Symbol VR PF 225 1.8 IF TJ Tstg 200 Max 125 Max 55 to +150 mW mW/°C mA °C °C Value 30 Unit Volts 1 2 (TO236AB) SOT23 CASE 318 STYLE 12 3
MARKING DIAGRAM
3 B6 1 2
ORDERING INFORMATION
Device BAT54ALT1 Package SOT23 Shipping 3000/Tape & Reel
Preferred devices are recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2000
November, 2000 Rev. 5
Publication Order Number: BAT54ALT1/D
BAT54ALT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic Reverse Breakdown Voltage (IR = 10 µA) Total Capacitance (VR = 1.0 V, f = 1.0 MHz) Reverse Leakage (VR = 25 V) Forward Voltage (IF = 0.1 mAdc) Forward Voltage (IF = 30 mAdc) Forward Voltage (IF = 100 mAdc) Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc, Figure 1) Forward Voltage (IF = 1.0 mAdc) Forward Voltage (IF = 10 mAdc) Forward Current (DC) Repetitive Peak Forward Current NonRepetitive Peak Forward Current (t < 1.0 s) Symbol V(BR)R CT IR VF VF VF trr VF VF IF IFRM IFSM Min 30 Typ 7.6 0.5 0.22 0.41 0.52 0.29 0.35 Max 10 2.0 0.24 0.5 0.8 5.0 0.32 0.40 200 300 600 Unit Volts pF µAdc Vdc Vdc Vdc ns Vdc Vdc mAdc mAdc mAdc
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BAT54ALT1
820 +10 V 2k 100 µH 0.1 µF DUT 50 OUTPUT PULSE GENERATOR 50 INPUT SAMPLING OSCILLOSCOPE 90% VR INPUT SIGNAL IR iR(REC) = 1 mA OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA) IF 0.1 µF tr 10% tp T IF trr T
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
100 125°C IF, FORWARD CURRENT (mA) IR, REVERSE CURRENT (µA) 85°C 10 150°C 1.0 25°C 0.1 0.0 40°C 100 TA = 125°C 10 1.0 TA = 85°C 0.1 0.01 0.001 0.2 0.3 0.4 0.1 0.5 VF, FORWARD VOLTAGE (VOLTS) 0.6 0 5 1000 TA = 150°C
55°C
TA = 25°C 15 25 10 20 VR, REVERSE VOLTAGE (VOLTS) 30
Figure 2. Forward Voltage
Figure 3. Leakage Current
14 CT, TOATAL CAPACITANCE (pF) 12 10 8 6 4 2 0 0 5 10 15 20 25 30
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Total Capacitance
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3
BAT54ALT1 INFORMATION FOR USING THE SOT23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection
0.037 0.95
interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process.
0.037 0.95
0.079 2.0 0.035 0.9 0.031 0.8
inches mm
SOT23
SOT23 POWER DISSIPATION The power dissipation of the SOT23 is a function of the drain pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA. Using the values provided on the data sheet for the SOT23 package, PD can be calculated as follows:
PD = TJ(max) TA RJA
SOLDERING PRECAUTIONS The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. · Always preheat the device. · The delta temperature between the preheat and soldering should be 100°C or less.* · When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10°C. · The soldering temperature and time shall not exceed 260°C for more than 10 seconds. · When shifting from preheating to soldering, the maximum temperature gradient shall be 5°C or less. · After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. · Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device.
The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 225 milliwatts.
PD = 150°C 25°C 556°C/W = 225 milliwatts
The 556°C/W for the SOT23 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT23 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal CladTM. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint.
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BAT54ALT1
PACKAGE DIMENSIONS
(TO236AB) SOT23 PLASTIC PACKAGE CASE 31808 ISSUE AE
A L
3 1 2
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. DIM A B C D G H J K L S V INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60
BS
V
G C D H K J
STYLE 12: PIN 1. CATHODE 2. CATHODE 3. ANODE
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