Details, datasheet, quote on part number: BAV70W
PartBAV70W
CategoryDiscrete => Diodes & Rectifiers => Switching Diodes => Small Signal
TitleSmall Signal
DescriptionDual Switching Diode
CompanyON Semiconductor
DatasheetDownload BAV70W datasheet
Cross ref.Similar parts: BAV 70W H6327, 2SD08740WL, 2SD0968ASL, MC2848-T50-1, BAV70W T/R, BAV70W-7-F, BAV70WT1, BAV70WT1G, BAV70W,115
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Features, Applications

Rating Reverse Voltage Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Max 200 500 Unit Vdc mAdc CASE 419­02, STYLE 5 SC­70/SOT­323

Characteristic Total Device Dissipation FR­ = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 200 1.6 RqJA 300 2.4 RqJA TJ, Tstg to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C

Reverse Breakdown Voltage (I(BR) = 100 µAdc) Reverse Voltage Leakage Current (VR = 70 Vdc) (VR = 50 Vdc) Diode Capacitance (VR = 1.0 MHz) Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) Reverse Recovery Time (IF = 10 mAdc, 100 , IR(REC) = 1.0 mAdc) (Figure 1) Forward Recovery Voltage (IF = 10 mAdc, = 20 ns) (Figure 2) 1. FR­ Alumina 0.4 0.3 V(BR) 70 Vdc

Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small­Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1997
Figure 1. Recovery Time Equivalent Test Circuit
Motorola Small­Signal Transistors, FETs and Diodes Device Data
IR , REVERSE CURRENT (µA) IF, FORWARD CURRENT (mA) = 125°C

 

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