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Part: BAV99RW
Category:
Discrete
-> Diodes & Rectifiers
-> Switching Diodes
-> Small Signal
Description: Dual Series Switching Diode
Company: ON Semiconductor
Datasheet: Download BAV99RW datasheet File size : 65 kB
Request For quote: Find where to buy BAV99RW
Datasheet text preview:
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BAV99WT1/D
SC-70/SOT-323 Dual Series Switching Diode
The BAV99WT1 is a smaller package, equivalent to the BAV99LT1. Suggested Applications · ESD Protection · Polarity Reversal Protection · Data Line Protection · Inductive Load Protection · Steering Logic MAXIMUM RATINGS (EACH DIODE)
Rating Reverse Voltage Forward Current Peak Forward Surge Current Repetitive Peak Reverse Voltage Average Rectified Forward Current(1) (averaged over any 20 ms period) Repetitive Peak Forward Current NonRepetitive Peak Forward Current t = 1.0 ms t = 1.0 ms t = 1.0 S Symbol VR IF IFM(surge) VRRM IF(AV) IFRM IFSM 2.0 1.0 0.5 Value 70 215 500 70 715 450 Unit Vdc mAdc mAdc V mA mA A
BAV99WT1 BAV99RWT1
Motorola Preferred Devices
3 1 2 ANODE 1 CATHODE 2
3 CATHODE/ANODE BAV99WT1 CASE 41902, STYLE 9 SC70/SOT323 CATHODE 1 3 CATHODE/ANODE BAV99RWT1 CASE 41902, STYLE 10 SC70/SOT323 ANODE 2
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR5 Board,(1) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature 1. FR5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. Symbol PD Max 200 1.6 Rq J A PD 625 300 2.4 Rq J A TJ, Tstg 417 65 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C
DEVICE MARKING
BAV99WT1 = A7 BAV99RWT1 = F7 Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
© Motorola, SmallSignal Transistors, FETs and Diodes Device Data Motorola Inc. 1996
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BAV99WT1 BAV99RWT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage (I(BR) = 100 µA) Reverse Voltage Leakage Current (VR = 70 Vdc) (VR = 25 Vdc, TJ = 150°C) (VR = 70 Vdc, TJ = 150°C) Diode Capacitance (VR = 0, f = 1.0 MHz) Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) V(BR) IR 70 -- -- -- -- -- -- -- -- -- -- -- 2.5 30 50 1.5 715 855 1000 1250 6.0 1.75 Vdc
mAdc
pF mVdc
CD VF
Reverse Recovery Time (IF = IR = 10 mAdc, iR(REC) = 1.0 mAdc) (Figure 1) RL = 100 W Forward Recovery Voltage (IF = 10 mA, tr = 20 ns)
trr VFR
ns V
820 +10 V 2k 100 µH 0.1 µF DUT 50 OUTPUT PULSE GENERATOR 50 INPUT SAMPLING OSCILLOSCOPE 90% VR INPUT SIGNAL IR iR(REC) = 1 mA OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA) IF 0.1 µF tr 10% tp t IF trr t
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
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Motorola SmallSignal Transistors, FETs and Diodes Device Data
BAV99WT1 BAV99RWT1
CURVES APPLICABLE TO EACH DIODE
100 10 TA = 150°C IF, FORWARD CURRENT (mA) I R, REVERSE CURRENT ( µA) 1.0 TA = 125°C
10 TA = 85°C TA = 25°C TA = 40°C 0.1 0.2
0.1
TA = 85°C
1.0
TA = 55°C 0.01 TA = 25°C
0.4
0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS)
1.2
0.001
0
10
20 30 40 VR, REVERSE VOLTAGE (VOLTS)
50
Figure 2. Forward Voltage
Figure 3. Leakage Current
0.68 CD , DIODE CAPACITANCE (pF)
0.64
0.60
0.56
0.52
0
2
4
6
8
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
Motorola SmallSignal Transistors, FETs and Diodes Device Data
3
BAV99WT1 BAV99RWT1
INFORMATION FOR USING THE SC70/SOT323 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must b e the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process.
0.025 0.025 0.65 0.65
0.075 1.9 0.035 0.9 0.028 0.7 inches mm
SC70/SOT323
SC70/SOT323 POWER DISSIPATION
The power dissipation of the SC70/SOT323 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by T J(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to a m b i e n t , and the operating temperature, TA . Using the values provided on the data sheet for the SC70/SOT323 package, PD can be calculated as follows: PD = TJ(max) TA R J A
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a s h o r t time could result in device failure. Therefore, the f o l l o w i n g items should always be observed in order to m i n i m i z e the thermal stress to which the devices are subjected. · Always preheat the device. · The delta temperature between the preheat and soldering should be 100°C or less.* · When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10°C. · The soldering temperature and time shall not exceed 260°C for more than 10 seconds. · When shifting from preheating to soldering, the maximum temperature gradient shall be 5°C or less. · After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. · Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device.
The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 200 milliwatts. PD = 150°C 25°C 625°C/W = 200 milliwatts
The 625°C/W for the SC70/SOT323 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 200 milliwatts. There are other alternatives to achieving higher p o w e r dissipation from the SC70/SOT323 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal CladTM. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint.
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Motorola SmallSignal Transistors, FETs and Diodes Device Data
BAV99WT1 BAV99RWT1
PACKAGE DIMENSIONS
A L
3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.071 0.087 0.045 0.053 0.035 0.049 0.012 0.016 0.047 0.055 0.000 0.004 0.004 0.010 0.017 REF 0.026 BSC 0.028 REF 0.031 0.039 0.079 0.087 0.012 0.016 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.90 1.25 0.30 0.40 1.20 1.40 0.00 0.10 0.10 0.25 0.425 REF 0.650 BSC 0.700 REF 0.80 1.00 2.00 2.20 0.30 0.40
S
1 2
B
V G
D
C 0.05 (0.002)
RN K
J
H
DIM A B C D G H J K L N R S V
CASE 41902 ISSUE H SC70/SOT323
STYLE 9: PIN 1. ANODE 2. CATHODE 3. CATHODEANODE STYLE 10: PIN 1. CATHODE 2. ANODE 3. ANODECATHODE
Motorola SmallSignal Transistors, FETs and Diodes Device Data
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