Details, datasheet, quote on part number: BAW56LT3
PartBAW56LT3
CategoryDiscrete => Diodes & Rectifiers => Schottky Diodes
DescriptionSmall Signal Anode , Package: SOT-23 (TO-236), Pins=3
CompanyON Semiconductor
DatasheetDownload BAW56LT3 datasheet
Cross ref.Similar parts: BAW56, BAW56, BAW56L
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Features, Applications

Monolithic Dual Switching Diode Common Anode

Rating Reverse Voltage Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Value 200 500 Unit Vdc mAdc

Characteristic Total Device Dissipation = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA 300 2.4 RqJA TJ, Tstg to +150 Unit mW mW/C C/W mW mW/C C/W C

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (EACH DIODE)

Reverse Breakdown Voltage (I(BR) = 100 Adc) Reverse Voltage Leakage Current (VR = 25 Vdc, = 150C) (VR = 70 Vdc) (VR = 70 Vdc, = 150C) Diode Capacitance (VR = 1.0 MHz) Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) Reverse Recovery Time (IF = 10 mAdc, IR(REC) = 1.0 mAdc) (Figure 1. FR5 in. 2. Alumina in. 99.5% alumina. V(BR) CD VF trr ns pF mVdc 70 Vdc Adc

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

0.1 F D.U.T. 90% 50 INPUT SAMPLING OSCILLOSCOPE VR IR INPUT SIGNAL iR(REC) 1.0 mA OUTPUT PULSE (IF = 10 mA; MEASURED at iR(REC) = 1.0 mA) t IF trr t

Notes: 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: tp trr

Figure 1. Recovery Time Equivalent Test Circuit
100 IF, FORWARD CURRENT (mA) IR , REVERSE CURRENT (A) 10

MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection

interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process.

SOT23 POWER DISSIPATION The power dissipation of the is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA. Using the values provided on the data sheet for the SOT23 package, PD can be calculated as follows:

The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature of 25C, one can calculate the power dissipation of the device which in this case is 225 milliwatts.

The 556C/W for the SOT23 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT23 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal CladTM. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint.

The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. Always preheat the device. The delta temperature between the preheat and soldering should 100C or less.* When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10C. The soldering temperature and time shall not exceed 260C for more than 10 seconds. When shifting from preheating to soldering, the maximum temperature gradient shall 5C or less. After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device.


 

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