Details, datasheet, quote on part number: BAW56TT1
PartBAW56TT1
CategoryDiscrete => Diodes & Rectifiers => Schottky Diodes
DescriptionDual Switching Diode , Package: SC-75 (SC-90, SOT-416), Pins=3
CompanyON Semiconductor
DatasheetDownload BAW56TT1 datasheet
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Features, Applications

Rating Reverse Voltage Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Max 200 500 Unit Vdc mAdc

Characteristic Total Device Dissipation, FR4 Board = 25C Derated above 25C Thermal Resistance, Junction to Ambient (1) Total Device Dissipation, FR4 Board = 25C Derated above 25C Thermal Resistance, Junction to Ambient (2) Junction and Storage Temperature Range FR4 @ Minimum Pad (2) FR4 Inch Pad Symbol 225 1.8 RJA 360 2.9 RJA TJ, Tstg +150 mW mW/C C/W 555 mW mW/C C/W Max Unit 3

Preferred devices are recommended choices for future use and best overall value.

Reverse Breakdown Voltage (I(BR) = 100 Adc) Reverse Voltage Leakage Current (VR = 25 Vdc, = 150C) (VR = 70 Vdc) (VR = 70 Vdc, = 150C) Diode Capacitance (VR = 1.0 MHz) Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 60 mAdc) (IF = 150 mAdc) Reverse Recovery Time (IF = 10 mAdc, 100 , IR(REC) = 1.0 mAdc) (Figure 1) V(BR) CD VF trr ns pF mVdc 70 Vdc Adc

0.1 F DUT 90% 50 INPUT SAMPLING OSCILLOSCOPE VR IR INPUT SIGNAL iR(REC) 1.0 mA OUTPUT PULSE (IF = 10 mA; MEASURED at iR(REC) = 1.0 mA) t IF trr t

Notes: 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: tp trr

Figure 1. Recovery Time Equivalent Test Circuit
IR , REVERSE CURRENT (A) IF, FORWARD CURRENT (mA) = 125C


 

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