|Category||Discrete => Diodes & Rectifiers => Schottky Diodes|
|Description||Common Anode DL Switching Diode , Package: SC-70 (SOT-323), Pins=3|
|Datasheet||Download BAW56WT1 datasheet
|Cross ref.||Similar parts: IPD78CN10N G, 1PS300|
Rating Reverse Voltage Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Max 200 500 Unit Vdc mAdc
Characteristic Total Device Dissipation = 25°C Derate above 25°C Board(1) Symbol PD Max 200 1.6 RqJA 300 2.4 RqJA TJ, Tstg to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C 3 ANODE CATHODE 1 2 CASE 41904, STYLE 4 SC70/SOT323
Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature
Reverse Breakdown Voltage (I(BR) = 100 µAdc) Reverse Voltage Leakage Current (VR = 25 Vdc, = 150°C) (VR = 70 Vdc) (VR = 70 Vdc, = 150°C) Diode Capacitance (VR = 1.0 MHz) Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 60 mAdc) (IF = 150 mAdc) Reverse Recovery Time (IF = 10 mAdc, 100 , IR(REC) = 1.0 mAdc) (Figure 1. FR5 in. 2. Alumina in. 99.5% alumina. V(BR) CD VF trr ns pF mVdc 70 Vdc µAdcPreferred devices are ON Semiconductor recommended choices for future use and best overall value.
0.1 µF DUT 90% 50 INPUT SAMPLING OSCILLOSCOPE VR IR INPUT SIGNAL iR(REC) 1.0 mA OUTPUT PULSE (IF = 10 mA; MEASURED at iR(REC) = 1.0 mA) t IF trr t
Notes: 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: tp » trrFigure 1. Recovery Time Equivalent Test Circuit
IR , REVERSE CURRENT (µA) IF, FORWARD CURRENT (mA)
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection
interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process.
SC-70/SOT-323 POWER DISSIPATION The power dissipation of the is a function of the collector pad size. This can vary from the minimum pad size for soldering to the pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient; and the operating temperature, TA. Using the values provided on the data sheet, PD can be calculated as follows.
the equation for an ambient temperature of 25°C, one can calculate the power dissipation of the device which in this case is 200 milliwatts.
The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into SOLDERING PRECAUTIONS The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. Always preheat the device. The delta temperature between the preheat and soldering should 100°C or less.* When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference should be a maximum of 10°C.
The 0.625°C/W assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 200 milliwatts. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal CladTM. Using a board material such as Thermal Clad, a power dissipation of 300 milliwatts can be achieved using the same footprint.
maximum temperature gradient should 5°C or less. After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. Mechanical stress or shock should not be applied during cooling * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device.
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2SK1552-01L : High voltage. N-channel Silicon Power MOSFET. High current Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee Applications Switching regulators UPS DC-DC converters General purpose power amplifier Absolute maximum ratings ( Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Continuous reverse drain.
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DSS2X81-0045B : Power. Power Schottky Rectifier. Symbol IFRMS IFAVM IFSM EAS IAR (dv/dt)cr TVJ TVJM Tstg Ptot VISOL Md Weight = 75°C; rectangular, = 75°C; rectangular, = 0.5; per device TVJ ms (50 Hz), sine IAS = 180 µH; TVJ = 25°C; non repetitive VA =1.5 VRRM typ.; f=10 kHz; repetitive International standard package miniBLOC Isolation voltage 2500 V~ UL registered 72873 2 independent Schottky diodes.
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