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Details, datasheet, quote on part number:BC182BRL1
 
 
Part:BC182BRL1
Category:Discrete => Transistors => Bipolar => General Purpose
Description:Transistor Silicon Plastic NPN , Package: TO-92 (TO-226), Pins=3
Company:ON Semiconductor
Datasheet:Download BC182BRL1 datasheet   File size : 52 kB
Request For quote:  Find where to buy BC182BRL1
 



Datasheet text preview:
ON Semiconductort

Amplifier Transistors
NPN Silicon
MAXIMUM RATINGS
Rating Collector­Emitter Voltage Collector­Base Voltage Emitter­Base Voltage Collector Current -- Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg BC182 50 60 6.0 100 350 2.8 1.0 8.0 ­55 to +150 Unit Vdc Vdc Vdc mAdc

BC182 BC182A BC182B

1

mW mW/°C Watts mW/°C °C

2

3

CASE 29­11, STYLE 17 TO­92 (TO­226AA)

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol Rq J A Rq J C Max 357 125 Unit °C/W °C/W 2 BASE

COLLECTOR 1

3 EMITTER

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Collector­Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0) Collector­Base Breakdown Voltage (IC = 10 mA, IE = 0) Emitter­Base Breakdown Voltage (IE = 100 mA, IC = 0) Collector Cutoff Current (VCB = 50 V, VBE = 0) Emitter­Base Leakage Current (VEB = 4.0 V, IC = 0) V(BR)CEO 50 V(BR)CBO 60 V(BR)EBO ICBO -- IEBO -- 0.2 -- 15 15 nA 6.0 -- -- -- -- V nA -- -- V V

© Semiconductor Components Industries, LLC, 2001

1

May, 2001 ­ Rev. 2

Publication Order Number: BC182/D

BC182
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS
DC Current Gain (IC = 10 µA, VCE = 5.0 V) (IC = 2.0 mA, VCE = 5.0 V) hFE BC182 BC182 BC182A BC182B BC182 VCE(sat) -- -- VBE(sat) VBE(on) -- 0.55 -- 0.5 0.62 0.83 -- 0.7 -- -- 0.07 0.2 -- 0.25 0.6 1.2 V V 40 120 120 180 80 -- -- -- -- 500 220 500 -- V --

(IC = 100 mA, VCE = 5.0 V) Collector­Emitter On Voltage (IC = 10 mA, IB = 0.5 mA) (IC = 100 mA, IB = 5.0 mA)(1) Base­Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)(1) Base­Emitter On Voltage (IC = 100 µA, VCE = 5.0 V) (IC = 2.0 mA, VCE = 5.0 V) (IC = 100 mA, VCE = 5.0 V)(1)

DYNAMIC CHARACTERISTICS
Current­Gain -- Bandwidth Product (IC = 0.5 mA, VCE = 3.0 V, f = 100 MHz) (IC = 10 mA, VCE = 5.0 V, f = 100 MHz) Common Base Output Capacitance (VCB = 10 V, IC = 0, f = 1.0 MHz) Common Base Input Capacitance (VEB = 0.5 V, IC = 0, f = 1.0 MHz) Small­Signal Current Gain (IC = 2.0 mA, VCE = 5.0 V, f = 1.0 kHz) BC182 BC182A BC182B NF -- 2.0 10 Cob Cib hfe 125 125 240 -- -- -- 500 260 500 dB fT -- 150 -- -- 100 200 -- 8.0 -- -- 5.0 -- pF pF -- MHz

Noise Figure (IC = 0.2 mA, VCE = 5.0 V, RS = 2.0 k, f = 1.0 kHz) 1. Pulse Test: Tp 300 s, Duty Cycle 2.0%.

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2

BC182
2.0 hFE, NORMALIZED DC CURRENT GAIN 1.5 1.0 0.8 0.6 0.4 0.3 0.2 0.2 VCE = 10 V TA = 25°C V, VOLTAGE (VOLTS) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.5 1.0 2.0 5.0 10 20 50 IC, COLLECTOR CURRENT (mAdc) 100 200 0 0.1 VCE(sat) @ IC/IB = 10 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mAdc) 50 70 100 TA = 25°C VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 10 V

Figure 1. Normalized DC Current Gain
BANDWIDTH PRODUCT (MHz)

Figure 1. "Saturation" and "On" Voltages

400 300 C, CAPACITANCE (pF) 200

10 7.0 5.0 Cib TA = 25°C

100 80 60 40 30 20 0.5 0.7 1.0

VCE = 10 V TA = 25°C

3.0 2.0

Cob

f T, CURRENT-GAIN

2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc)

30

50

1.0 0.4

0.6 0.8 1.0

2.0 4.0 6.0 8.0 10 VR, REVERSE VOLTAGE (VOLTS)

20

40

Figure 2. Current­Gain -- Bandwidth Product

Figure 3. Capacitances

r b, BASE SPREADING RESISTANCE (OHMS)

170 160 150 140 130 120 0.1 VCE = 10 V f = 1.0 kHz TA = 25°C

0.2

0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mAdc)

5.0

10

Figure 4. Base Spreading Resistance

PACKAGE DIMENSIONS

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BC182
TO­92 (TO­226) CASE 29­11 ISSUE AL
A R P L
SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 ---

B

K

XX G H V
1

D J C SECTION X­X N N
TYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER

DIM A B C D G H J K L N P R V

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.

PUBLICATION ORDERING INFORMATION
Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303­675­2175 or 800­344­3860 Toll Free USA/Canada Fax: 303­675­2176 or 800­344­3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800­282­9855 Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 4­32­1 Nishi­Gotanda, Shinagawa­ku, Tokyo, Japan 141­0031 Phone: 81­3­5740­2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative.

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BC182/D