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Part: BC489B
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
Description: Transistor Silicon Plastic NPN , Package: TO-92 (TO-226), Pins=3
Company: ON Semiconductor
Datasheet: Download BC489B datasheet File size : 60 kB
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Datasheet text preview:
ON Semiconductort
High Current Transistors
NPN Silicon
MAXIMUM RATINGS
Rating CollectorEmitter Voltage CollectorBase Voltage EmitterBase Voltage Collector Current -- Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 80 80 5.0 0.5 625 5.0 1.5 12 55 to +150 Unit Vdc Vdc Vdc Adc
BC489, A, B
1
mW mW/°C Watt mW/°C °C
2
3
CASE 2904, STYLE 17 TO92 (TO226AA)
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol Rq J A Rq J C Max 200 83.3 Unit °C/W °C/W 2 BASE
COLLECTOR 1
3 EMITTER
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) CollectorBase Breakdown Voltage (IC = 100 mAdc, IE = 0) EmitterBase Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO 80 80 5.0 -- -- -- -- -- -- -- -- 100 Vdc Vdc Vdc nAdc
ON CHARACTERISTICS*
DC Current Gain (IC = 10 mAdc, VCE = 2.0 Vdc) (IC = 100 mAdc, VCE = 2.0 Vdc) hFE BC489 BC489A BC489B 40 60 100 160 15 -- -- 160 260 -- -- 400 250 400 -- --
(IC = 1.0 Adc, VCE = 5.0 Vdc)* 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2%.
© Semiconductor Components Industries, LLC, 2001
1
March, 2001 Rev. 1
Publication Order Number: BC489/D
BC489, A, B
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS* (Continued)
CollectorEmitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) (IC = 1.0 Adc, IB = 100 mAdc) BaseEmitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) (IC = 1.0 Adc, IB = 100 mAdc)(1) VCE(sat) -- -- VBE(sat) -- -- 0.85 0.9 1.2 -- 0.2 0.3 0.5 -- Vdc Vdc
DYNAMIC CHARACTERISTICS
CurrentGain -- Bandwidth Product (IC = 50 mAdc, VCE = 2.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%. fT Cob Cib -- -- -- 200 7.0 50 -- -- -- MHz pF pF
TURN-ON TIME 5.0 µs +10 V 0 tr = 3.0 ns -1.0 V 100 Vin 5.0 µF RB 100 VCC +40 V RL OUTPUT *CS < 6.0 pF 5.0 µs tr = 3.0 ns *Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities Vin
TURN-OFF TIME +VBB 100 RB 5.0 µF 100 VCC +40 V RL OUTPUT *CS < 6.0 pF
Figure 1. Switching Time Test Circuits
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2
BC489, A, B
BANDWIDTH PRODUCT (MHz) 300 200 VCE = 2.0 V TJ = 25°C C, CAPACITANCE (pF) 80 60 40 Cibo
TJ = 25°C
100 70 50
20
f T, CURRENT-GAIN
10 8.0 6.0 Cobo 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100
30 2.0
3.0
5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA)
200
4.0 0.1
Figure 2. CurrentGain -- Bandwidth Product
Figure 3. Capacitance
1.0 k 700 500 300 200 t, TIME (ns) 100 70 50 30 20 VCC = 40 V IC/IB = 10 IB1 = IB2 TJ = 25°C 10
ts
tf tr td @ VBE(off) = 0.5 V 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500
10 5.0 7.0
Figure 4. Switching Time
r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1.0 0.7 0.5 0.3 0.2
D = 0.5 0.2 0.1 0.02 P(pk) t1 t2
0.1 0.07 0.05 0.03 0.02 0.01 1.0
0.01 SINGLE PULSE
SINGLE PULSE
ZJC(t) = r(t) · RJC ZJA(t) = r(t) · RJA 20 50 100 200 500 t, TIME (ms) 1.0 k 2.0 k
DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN469) TJ(pk) TC = P(pk) ZJC(t) TJ(pk) TA = P(pk) ZJA(t)
2.0
5.0
10
5.0 k
10 k
20 k
50 k 100 k
Figure 5. Thermal Response
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3
BC489, A, B
1.0 k 700 500 300 200 100 70 50 30 20 10 1.0 TA = 25°C 1.0 s TC = 25°C 100 µs 1.0 ms
IC, COLLECTOR CURRENT (mA)
CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT BC489 20 30 50 2.0 3.0 5.0 7.0 10 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 70 100
Figure 6. Active Region -- Safe Operating Area
400 TJ =125°C 200 25°C 100 80 60 40 -55°C VCE = 1.0 V
hFE , DC CURRENT GAIN
0.5
0.7
1.0
2.0
3.0
5.0
7.0 10 20 30 IC, COLLECTOR CURRENT (mA)
50
70
100
200
300
500
Figure 7. DC Current Gain
1.0 TJ = 25°C 0.8 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 10 0.6 0.4 0.2 0 0.5 VCE(sat) @ IC/IB = 10 1.0 2.0 5.0 10 50 100 20 IC, COLLECTOR CURRENT (mA) 200 500 VBE(on) @ VCE = 1.0 V
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
1.0 TJ = 25°C 0.8 0.6 0.4 0.2 0 0.05 50 IC = 10 mA mA 100 mA 250 mA 500 mA
0.1
0.2
0.5 2.0 5.0 1.0 10 IC, COLLECTOR CURRENT (mA)
20
50
Figure 8. "On" Voltages
Figure 9. Collector Saturation Region
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4
BC489, A, B
RVB, TEMPERATURE COEFFICIENT (mV/°C) -0.8 -1.0 TJ = 25°C -0.8 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 10 -0.6 -0.4 -0.2 VCE(sat) @ IC/IB = 10 1.0 2.0 5.0 20 50 10 100 IC, COLLECTOR CURRENT (mA) 200 500 0 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mA) -500 VBE(on) @ VCE = -1.0 V
-1.2 -1.6 -2.0 -2.4 -2.8 0.5 RVB for VBE
Figure 10. BaseEmitter Temperature Coefficient
Figure 11. "On" Voltages
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
TJ = 25°C -0.8 -0.6 -0.4 -0.2 0 -0.05 -0.1 -0.2
RVB, TEMPERATURE COEFFICIENT (mV/°C)
-1.0
-0.8
-1.2 -1.6 -2.0 -2.4 -2.8 -0.5 RVB for VBE
IC = -10 mA
-50 mA -100 mA
-250 mA -500 mA
-0.5 -1.0 -2.0 -5.0 IB, BASE CURRENT (mA)
-10
-20
-50
-1.0
-2.0
-5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mA)
-500
Figure 12. Collector Saturation Region
Figure 13. BaseEmitter Temperature Coefficient
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5
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