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Part: BC490AZL1
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
Description: PNP Silicon Plastic Transistor , Package: TO-92 (TO-226), Pins=3
Company: ON Semiconductor
Datasheet: Download BC490AZL1 datasheet File size : 141 kB
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Datasheet text preview:
BC490, BC490A, BC490B High Current Transistors
PNP Silicon
· Device Marking: 490
Device Marking: 490A Device Marking: 490B
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COLLECTOR 1
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD 625 5.0 PD 1.5 12 TJ, Tstg 55 to +150 Watts mW/°C °C 1 2 3 mW mW/°C Value 80 80 4.0 1.0 Unit Vdc Vdc Vdc Adc 3 EMITTER 2 BASE
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RJA RJC Max 200 83.3 Unit °C/W °C/W CASE 29 TO92 STYLE 17
ORDERING INFORMATION
Device BC490 BC490A BC490AZL1 BC490BZL1 Package TO92 TO92 TO92 TO92 Shipping 5000 Units/Box 5000 Units/Box 2000/Ammo Pack 2000/Ammo Pack
© Semiconductor Components Industries, LLC, 2001
1
June, 2001 Rev. 1
Publication Order Number: BC490/D
BC490, BC490A, BC490B
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) CollectorBase Breakdown Voltage (IC = 100 mAdc, IE = 0) EmitterBase Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO 80 80 4.0 -- -- -- -- -- -- -- -- 100 Vdc Vdc Vdc nAdc
ON CHARACTERISTICS*
DC Current Gain (IC = 10 mAdc, VCE = 2.0 Vdc) (IC = 100 mAdc, VCE = 2.0 Vdc) hFE BC490 BC490A BC490B VCE(sat) -- -- VBE(sat) -- -- 0.9 1.0 1.2 -- 0.25 0.5 0.5 -- Vdc 40 60 100 160 15 -- -- 140 -- -- -- 400 250 400 -- Vdc --
(IC = 1.0 Adc, VCE = 5.0 Vdc) CollectorEmitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) (IC = 1.0 Adc, IB = 100 mAdc) BaseEmitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) (IC = 1.0 Adc, IB = 100 mAdc)
DYNAMIC CHARACTERISTICS
CurrentGain -- Bandwidth Product (IC = 50 mAdc, VCE = 2.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2%. TURN-ON TIME 5.0 µs +10 V 0 tr = 3.0 ns -1.0 V 100 Vin 5.0 µF RB 100 VCC +40 V RL OUTPUT *CS < 6.0 pF 5.0 µs tr = 3.0 ns *Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities Vin 5.0 µF TURN-OFF TIME +VBB 100 RB 100 VCC +40 V RL OUTPUT *CS < 6.0 pF fT Cob Cib -- -- -- 150 9.0 110 -- -- -- MHz pF pF
Figure 1. Switching Time Test Circuits
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2
BC490, BC490A, BC490B
BANDWIDTH PRODUCT (MHz) 200 VCE = -2.0 V TJ = 25°C 100 70 50 C, CAPACITANCE (pF) 100 70 50 30 20 Cibo TJ = 25°C
f T, CURRENT-GAIN
30 20 -2.0 -3.0
10 7.0
Cobo
-5.0 -7.0 -10 -20 -30 -50 -70 -100 IC, COLLECTOR CURRENT (mA)
-200
5.0 -0.1
-0.2
-0.5 -1.0 -2.0 -5.0 -10 -20 VR, REVERSE VOLTAGE (VOLTS)
-50 -100
Figure 2. CurrentGain -- Bandwidth Product
Figure 3. Capacitance
1.0 k 700 500 300 200 t, TIME (ns) 100 70 50 30 20 ts
td @ VBE(off) = -0.5 V VCC = -40 V IC/IB = 10 IB1 = IB2 TJ = 25°C
tf
tr 10 -5.0 -7.0 -10 -20 -30 -50 -70 -100 -200 -300 IC, COLLECTOR CURRENT (mA)
-500
Figure 4. Switching Time
r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 1.0
= 0.5 0.2 0.1 0.02 P(pk) t1 t2
0.01 SINGLE PULSE
SINGLE PULSE
DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN469) TJ(pk) TC = P(pk) ZqJC(t) TJ(pk) TA = P(pk) ZqJA(t)
ZJC(t) = r(t) · RJC ZJA(t) = r(t) · RJA 20 50 100 200 t, TIME (ms) 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100
2.0 D
5.0
10
Figure 5. Thermal Response
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3
BC490, BC490A, BC490B
-1.0 k -700 IC, COLLECTOR CURRENT (mA) -500 -200 -100 -70 -50 -30 -20 -10 -1.0 TA = 25°C TC = 25°C 1.0 ms V, VOLTAGE (VOLTS) -300 1.0 s 100 µs 1.0 TJ = 25°C 0.8 VBE(sat) @ IC/IB = 10 0.6 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.5 1.0 2.0 5.0 10 50 100 20 IC, COLLECTOR CURRENT (mA) 200 500 VBE(on) @ VCE = 1.0 V
CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT BC490 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 6. Active Region, Safe Operating Area
Figure 7. "On" Voltages
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
TJ = 25°C 0.8 0.6 0.4 0.2 0 0.05 IC = 10 mA 50 mA 100 mA 250 mA 500 mA
RVB, TEMPERATURE COEFFICIENT (mV/°C)
1.0
-0.8
-1.2 -1.6 -2.0 RVB for VBE -2.4 -2.8 0.5
0.1
0.2
1.0 2.0 10 0.5 5.0 IC, COLLECTOR CURRENT (mA)
20
50
1.0
2.0
5.0 20 50 10 100 IC, COLLECTOR CURRENT (mA)
200
500
Figure 8. Collector Saturation Region
Figure 9. BaseEmitter Temperature Coefficient
400 TJ = 125°C hFE , DC CURRENT GAIN 200 25°C -55°C VCE = -1.0 V
100 80 60 40 -0.5
-0.7
-1.0
-2.0
-3.0
-5.0
-7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA)
-50
-70
-100
-200
-300
-500
Figure 10. DC Current Gain
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4
BC490, BC490A, BC490B
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) -1.0 TJ = 25°C -0.8 V, VOLTAGE (VOLTS) -0.6 -0.4 -0.2 0 -0.5 -1.0 VCE(sat) @ IC/IB = 10 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mA) -500 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = -1.0 V -1.0 TJ = 25°C -0.8 -0.6 -0.4 -0.2 0 -0.05 -0.1
IC = -10 mA
-50 mA
-100 mA
-250 mA
-500 mA
-0.2
-0.5 -1.0 -2.0 -5.0 IB, BASE CURRENT (mA)
-10
-20
-50
Figure 11. "On" Voltages
Figure 12. Collector Saturation Region
RVB, TEMPERATURE COEFFICIENT (mV/°C)
-0.8
-1.2 -1.6 -2.0 -2.4 -2.8 -0.5 RVB for VBE
-1.0
-2.0
-5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mA)
-500
Figure 13. BaseEmitter Temperature Coefficient
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5
Others parts begin by bc
BC-1 BC-2 BC-3 BC-4 BC-5 BC-6 BC-7 BC-8 BC-9 BC-10 BC-11 BC-12 BC-13 BC-14 BC-15 BC-16 BC-17 BC-18 BC-19 BC-20 BC-21 BC-22 BC-23
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