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Part: BC550B/C
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
Description: NPN Silicon Low Noise Transistor
Company: ON Semiconductor
Datasheet: Download BC550B/C datasheet File size : 324 kB
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Datasheet text preview:
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Low Noise Transistors
Order this document by BC549B/D
NPN Silicon
COLLECTOR 1 2 BASE 3 EMITTER
BC549B,C BC550B,C
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current -- Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg BC549 30 30 5.0 100 625 5.0 1.5 12 55 to +150 BC550 45 50 Unit Vdc Vdc Vdc mAdc mW mW/°C Watt mW/°C °C
1 2 3
CASE 2904, STYLE 17 TO92 (TO226AA)
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol Rq J A Rq J C Max 200 83.3 Unit °C/W °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 µAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 V, IE = 0) (VCB = 30 V, IE = 0, TA = +125°C) Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) V(BR)CEO BC549B,C BC550B,C V(BR)CBO BC549B,C BC550B,C V(BR)EBO ICBO -- -- IEBO -- -- -- -- 15 5.0 15 nAdc µAdc nAdc 30 50 5.0 -- -- -- -- -- -- Vdc 30 45 -- -- -- -- Vdc Vdc
Motorola SmallSignal Transistors, FETs and Diodes Device Data İ Motorola, Inc. 1996
1
BC549B,C BC550B,C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 10 µAdc, VCE = 5.0 Vdc) (IC = 2.0 mAdc, VCE = 5.0 Vdc) Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 0.5 mAdc) (IC = 10 mAdc, IB = see note 1) (IC = 100 mAdc, IB = 5.0 mAdc, see note 2) BaseEmitter Saturation Voltage (IC = 100 mAdc, IB = 5.0 mAdc) BaseEmitter On Voltage (IC = 10 µAdc, VCE = 5.0 Vdc) (IC = 100 µAdc, VCE = 5.0 Vdc) (IC = 2.0 mAdc, VCE = 5.0 Vdc) hFE BC549B/550B BC549C/550C BC549B/550B BC549C/550C VCE(sat) -- -- -- VBE(sat) VBE(on) -- -- 0.55 0.52 0.55 0.62 -- -- 0.7 -- 0.075 0.3 0.25 1.1 0.25 0.6 0.6 -- Vdc Vdc 100 100 200 420 150 270 290 500 -- -- 450 800 Vdc --
SMALLSIGNAL CHARACTERISTICS
Current Gain -- Bandwidth Product (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) CollectorBase Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) SmallSignal Current Gain (IC = 2.0 mAdc, VCE = 5.0 V, f = 1.0 kHz) BC549B/BC550B BC549C/BC550C NF1 NF2 fT Ccbo hfe 240 450 -- -- 330 600 0.6 -- 500 900 dB 2.5 10 -- -- 250 2.5 -- -- MHz pF --
Noise Figure (IC = 200 µAdc, VCE = 5.0 Vdc, RS = 2.0 k, f = 1.0 kHz) (IC = 200 µAdc, VCE = 5.0 Vdc, RS = 100 k, f = 1.0 kHz) NOTES: 1. IB is value for which IC = 11 mA at VCE = 1.0 V. 2. Pulse test = 300 µs Duty cycle = 2%.
RS
in en
IDEAL TRANSISTOR
Figure 1. Transistor Noise Model
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Motorola SmallSignal Transistors, FETs and Diodes Device Data
BC549B,C BC550B,C
2.0 hFE, NORMALIZED DC CURRENT GAIN 1.5 1.0 0.8 0.6 0.4 0.3 0.2 0.2 VCE = 10 V TA = 25°C V, VOLTAGE (VOLTS)
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.5 1.0 2.0 5.0 10 20 50 IC, COLLECTOR CURRENT (mAdc) 100 200 0 0.1 0.2 VCE(sat) @ IC/IB = 10 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mAdc) 50 100 TA = 25°C VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 10 V
Figure 2. Normalized DC Current Gain
f T, CURRENTGAIN -- BANDWIDTH PRODUCT (MHz)
Figure 3. "Saturation" and "On" Voltages
400 300 200 C, CAPACITANCE (pF)
10 7.0 5.0 Cib TA = 25°C
100 80 60 40 30 20
VCE = 10 V TA = 25°C
3.0 Cob 2.0
0.5 0.7
1.0
2.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc)
50
1.0 0.4
0.6
1.0
2.0 4.0 10 VR, REVERSE VOLTAGE (VOLTS)
20
40
Figure 4. CurrentGain -- Bandwidth Product
Figure 5. Capacitance
r b, BASE SPREADING RESISTANCE (OHMS)
170 160
150 VCE = 10 V f = 1.0 kHz TA = 25°C
140
130
120 0.1
0.2
0.5 1.0 2.0 IC, COLLECTOR CURRENT (mAdc)
5.0
10
Figure 6. Base Spreading Resistance
Motorola SmallSignal Transistors, FETs and Diodes Device Data
3
BC549B,C BC550B,C
PACKAGE DIMENSIONS
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 0.250 0.080 0.105 0.100 0.115 0.135 MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 6.35 2.04 2.66 2.54 2.93 3.43
A R P
SEATING PLANE
B
F
L K D
XX G H V
1
J
C N N
SECTION XX
DIM A B C D F G H J K L N P R V
CASE 02904 (TO226AA) ISSUE AD
STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
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Motorola SmallSignal Transistors, FETs and Diodes Device Data
*BC549B/D*
BC549B/D
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