|
|
Part: BC556
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
-> PNP
-> Amplifier
Description: PNP General Purpose Transistor
Company: ON Semiconductor
Datasheet: Download BC556 datasheet File size : 324 kB
Request For quote: Find where to buy BC556
Datasheet text preview:
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Amplifier Transistors
Order this document by BC556/D
PNP Silicon
COLLECTOR 1 2 BASE 3 EMITTER
BC556,B BC557A,B,C BC558B
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current -- Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg BC 556 65 80 BC 557 45 50 5.0 100 625 5.0 1.5 12 55 to +150 BC 558 30 30 Unit Vdc Vdc Vdc mAdc mW mW/°C Watt mW/°C °C
1 2 3
CASE 2904, STYLE 17 TO92 (TO226AA)
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol Rq J A Rq J C Max 200 83.3 Unit °C/W °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0) V(BR)CEO BC556 BC557 BC558 V(BR)CBO BC556 BC557 BC558 V(BR)EBO BC556 BC557 BC558 ICES BC556 BC557 BC558 BC556 BC557 BC558 -- -- -- -- -- -- 2.0 2.0 2.0 -- -- -- 100 100 100 4.0 4.0 4.0 nA 5.0 5.0 5.0 -- -- -- -- -- -- 80 50 30 -- -- -- -- -- -- V 65 45 30 -- -- -- -- -- -- V V
Collector Base Breakdown Voltage (IC = 100 µAdc)
Emitter Base Breakdown Voltage (IE = 100 mAdc, IC = 0)
CollectorEmitter Leakage Current (VCES = 40 V) (VCES = 20 V) (VCES = 20 V, TA = 125°C)
µA
Motorola SmallSignal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996
1
BC556,B BC557A,B,C BC558B
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 10 µAdc, VCE = 5.0 V) hFE BC557A BC556B/557B/558B BC557C BC556 BC557 BC558 BC557A BC556B/557B/558B BC557C BC557A BC556B/557B/558B BC557C VCE(sat) -- -- -- VBE(sat) -- -- VBE(on) 0.55 -- 0.62 0.7 0.7 0.82 0.7 1.0 -- -- V 0.075 0.3 0.25 0.3 0.6 0.65 V -- -- -- 120 120 120 120 180 420 -- -- -- 90 150 270 -- -- -- 170 290 500 120 180 300 -- -- -- 500 800 800 220 460 800 -- -- -- V --
(IC = 2.0 mAdc, VCE = 5.0 V)
(IC = 100 mAdc, VCE = 5.0 V)
Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 0.5 mAdc) (IC = 10 mAdc, IB = see Note 1) (IC = 100 mAdc, IB = 5.0 mAdc) Base Emitter Saturation Voltage (IC = 10 mAdc, IB = 0.5 mAdc) (IC = 100 mAdc, IB = 5.0 mAdc) BaseEmitter On Voltage (IC = 2.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc)
SMALLSIGNAL CHARACTERISTICS
Current Gain -- Bandwidth Product (IC = 10 mA, VCE = 5.0 V, f = 100 MHz) fT BC556 BC557 BC558 Cob NF BC556 BC557 BC558 hfe BC556 BC557/558 BC557A BC556B/557B/558B BC557C 125 125 125 240 450 -- -- 220 330 600 500 900 260 500 900 -- -- -- 2.0 2.0 2.0 10 10 10 -- -- -- -- -- 280 320 360 3.0 -- -- -- 6.0 pF dB MHz
Output Capacitance (VCB = 10 V, IC = 0, f = 1.0 MHz) Noise Figure (IC = 0.2 mAdc, VCE = 5.0 V, RS = 2.0 kW, f = 1.0 kHz, f = 200 Hz) SmallSignal Current Gain (IC = 2.0 mAdc, VCE = 5.0 V, f = 1.0 kHz)
Note 1: IC = 10 mAdc on the constant base current characteristics, which yields the point IC = 11 mAdc, VCE = 1.0 V.
2
Motorola SmallSignal Transistors, FETs and Diodes Device Data
BC556,B BC557A,B,C BC558B
BC557/BC558
2.0 hFE , NORMALIZED DC CURRENT GAIN 1.5 1.0 0.7 0.5 VCE = 10 V TA = 25°C V, VOLTAGE (VOLTS)
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 VCE(sat) @ IC/IB = 10 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mAdc) 50 100 VBE(on) @ VCE = 10 V TA = 25°C VBE(sat) @ IC/IB = 10
0.3 0.2 0.2
0.5 1.0 2.0 5.0 10 20 50 IC, COLLECTOR CURRENT (mAdc)
100 200
0 0.1 0.2
Figure 1. Normalized DC Current Gain
Figure 2. "Saturation" and "On" Voltages
2.0 VB , TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOREMITTER VOLTAGE (V) TA = 25°C 1.6
1.0 55°C to +125°C 1.2 1.6 2.0 2.4 2.8
1.2 IC = 10 mA IC = 50 mA IC = 20 mA IC = 200 mA IC = 100 mA
0.8
0.4
0
0.02
0.1 1.0 IB, BASE CURRENT (mA)
10 20
0.2
10 1.0 IC, COLLECTOR CURRENT (mA)
100
Figure 3. Collector Saturation Region
f T, CURRENTGAIN BANDWIDTH PRODUCT (MHz)
Figure 4. BaseEmitter Temperature Coefficient
10 7.0 C, CAPACITANCE (pF) 5.0 Cob Cib TA = 25°C
400 300 200 150 100 80 60 40 30 20 0.5 VCE = 10 V TA = 25°C
3.0 2.0
1.0 0.4 0.6
1.0
2.0
4.0 6.0
10
20 30 40
1.0
2.0 3.0
5.0
10
20
30
50
VR, REVERSE VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mAdc)
Figure 5. Capacitances
Figure 6. CurrentGain Bandwidth Product
Motorola SmallSignal Transistors, FETs and Diodes Device Data
3
BC556,B BC557A,B,C BC558B
BC556
1.0 hFE , DC CURRENT GAIN (NORMALIZED) VCE = 5.0 V TA = 25°C 2.0 1.0 0.5 V, VOLTAGE (VOLTS) TJ = 25°C 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 5.0 V 0.4
0.2 0.2 0 0.2 VCE(sat) @ IC/IB = 10 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT (AMP) 0.5 50 100 200 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA)
0.1 0.2
Figure 7. DC Current Gain
Figure 8. "On" Voltage
VCE , COLLECTOREMITTER VOLTAGE (VOLTS)
2.0 VB, TEMPERATURE COEFFICIENT (mV/ °C)
1.0
1.6 IC = 10 mA 20 mA 50 mA 100 mA 200 mA
1.4
1.2
1.8
VB for VBE
55°C to 125°C
0.8
2.2
0.4 TJ = 25°C 0 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) 5.0 10 20
2.6
3.0 0.2
0.5 1.0
50 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA)
100 200
Figure 9. Collector Saturation Region
Figure 10. BaseEmitter Temperature Coefficient
f T, CURRENTGAIN BANDWIDTH PRODUCT
40 TJ = 25°C C, CAPACITANCE (pF) 20 Cib
500
VCE = 5.0 V
200 100 50
10 8.0 6.0 4.0 2.0 0.1 0.2 Cob
20
0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS)
50 100
100 1.0 10 IC, COLLECTOR CURRENT (mA)
Figure 11. Capacitance
Figure 12. CurrentGain Bandwidth Product
4
Motorola SmallSignal Transistors, FETs and Diodes Device Data
BC556,B BC557A,B,C BC558B
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1.0 0.7 0.5 0.3 0.2
D = 0.5 0.2 0.05 SINGLE PULSE P(pk) t1 t2 DUTY CYCLE, D = t1/t2 ZJC(t) = (t) RJC RJC = 83.3°C/W MAX ZJA(t) = r(t) RJA RJA = 200°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) TC = P(pk) RJC(t) 500 1.0 k 2.0 k 5.0 k 10 k
0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.1
SINGLE PULSE
0.2
0.5
1.0
2.0
5.0
10
20 50 t, TIME (ms)
100
200
Figure 13. Thermal Response
200 1s IC, COLLECTOR CURRENT (mA) 100 50 TA = 25°C TJ = 25°C 3 ms The safe operating area curves indicate ICVCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 14 is based upon TJ(pk) = 150°C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) 150°C. TJ(pk) may be calculated from the data in Figure 13. At high case or ambient temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown.
10 5.0
BC558 BC557 BC556 BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 5.0 10 30 45 65 100 VCE, COLLECTOREMITTER VOLTAGE (V)
2.0 1.0
Figure 14. Active Region -- Safe Operating Area
Motorola SmallSignal Transistors, FETs and Diodes Device Data
5
Others parts begin by bc
BC-1 BC-2 BC-3 BC-4 BC-5 BC-6 BC-7 BC-8 BC-9 BC-10 BC-11 BC-12 BC-13 BC-14 BC-15 BC-16 BC-17 BC-18 BC-19 BC-20 BC-21 BC-22 BC-23
|
|
|
