Details, datasheet, quote on part number: BC635
CategoryDiscrete => Transistors => Bipolar => High Current
DescriptionHigh Current Transistors
CompanyON Semiconductor
DatasheetDownload BC635 datasheet
Cross ref.Similar parts: BC337G, LP395, 2SC1213, 2SC1213A, 2SC2001, BC368-16, BC368-40, BC635-10, BC635-16, BC637
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Features, Applications

Rating Collector ­ Emitter Voltage Collector ­ Base Voltage Emitter ­ Base Voltage Collector Current Continuous Total Device Dissipation = 25°C Derate above 25°C Total Device Dissipation = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD TJ, Tstg 639 80 Unit Vdc Adc mW mW/°C Watt mW/°C °C

Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W

Collector ­ Emitter Breakdown Voltage(1) (IC = 10 mAdc, = 0) V(BR)CEO BC637 BC639 V(BR)CBO BC637 BC639 V(BR)EBO ICBO 100 10 nAdc µAdc Vdc 60 80 Vdc

Emitter ­ Base Breakdown Voltage (IE = 10 mAdc, = 0) Collector Cutoff Current (VCB = 30 Vdc, = 0) (VCB = 30 Vdc, 125°C) 1. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.

Motorola Small­Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

DC Current Gain (IC = 5.0 mAdc, VCE = 2.0 Vdc) (IC = 150 mAdc, VCE = 2.0 Vdc) hFE BC637 BC639 VCE(sat) VBE(on) Vdc

(IC = 500 mA, VCE 2.0 V) Collector ­ Emitter Saturation Voltage (IC = 500 mAdc, = 50 mAdc) Base­Emitter On Voltage (IC = 500 mAdc, VCE = 2.0 Vdc)

Current ­ Gain Bandwidth Product (IC = 50 mAdc, VCE = 2.0 Vdc, = 100 MHz) Output Capacitance (VCB = 10 Vdc, = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, = 1.0 MHz) 1. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%. fT Cob Cib 7.0 50 MHz pF

Motorola Small­Signal Transistors, FETs and Diodes Device Data
Figure 1. Active Region Safe Operating Area


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