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Part: BC636

Category:
 Discrete
   -> Transistors
     -> Bipolar
       -> General Purpose

Description: General Purpose Transistor Pnp, Package: TO-92 (TO-226), Pins=3

Company: ON Semiconductor

Datasheet: Download BC636 datasheet     File size : 190 kB

Request For quote: Find where to buy BC636



Datasheet text preview:
BC636, BC636-16, BC638, BC640, BC640-16 High Current Transistors
PNP Silicon
http://onsemi.com

MAXIMUM RATINGS
Rating Collector-Emitter Voltage BC636 BC638 BC640 Collector-Base Voltage BC636 BC638 BC640 Emitter-Base Voltage Collector Current -- Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range VEBO IC PD 625 5.0 PD 1.5 12 TJ, Tstg ­55 to +150 Watts mW/°C °C mW mW/°C 1 VCBO ­45 ­60 ­80 ­5.0 ­0.5 Vdc Adc Symbol VCEO ­45 ­60 ­80 Vdc Value Unit Vdc 3 BASE

COLLECTOR 2

1 EMITTER

2

3

CASE 29 TO­92 STYLE 14

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RJA RJC Max 200 83.3 Unit °C/W

ORDERING INFORMATION
°C/W Device BC636 BC636ZL1 BC636­16ZL1 BC638 BC638ZL1 BC640 BC640ZL1 BC640­16 Package TO­92 TO­92 TO­92 TO­92 TO­92 TO­92 TO­92 TO­92 Shipping 5000 Units/Box 2000/Ammo Pack 2000/Ammo Pack 5000 Units/Box 2000/Ammo Pack 5000 Units/Box 2000/Ammo Pack 5000 Units/Box

© Semiconductor Components Industries, LLC, 2001

1

June, 2000 ­ Rev. 1

Publication Order Number: BC636/D

BC636, BC636­16, BC638, BC640, BC640­16
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Collector­Emitter Breakdown Voltage (IC = ­10 mAdc, IB = 0) V(BR)CEO BC636 BC638 BC640 V(BR)CBO BC636 BC638 BC640 V(BR)EBO ICBO -- -- -- -- ­100 ­10 nAdc µAdc ­45 ­60 ­80 ­5.0 -- -- -- -- -- -- -- -- Vdc ­45 ­60 ­80 -- -- -- -- -- -- Vdc Vdc

Collector­Base Breakdown Voltage (IC = ­100 µAdc, IE = 0)

Emitter­Base Breakdown Voltage (IE = ­10 mAdc, IC = 0) Collector Cutoff Current (VCB = ­30 Vdc, IE = 0) (VCB = ­30 Vdc, IE = 0, TA = 125°C)

ON CHARACTERISTICS (1)
DC Current Gain (IC = ­5.0 mAdc, VCE = ­2.0 Vdc) (IC = ­150 mAdc, VCE = ­2.0 Vdc) hFE BC636 BC636­16 BC638 BC640 BC640­16 VCE(sat) VBE(on) 25 40 100 40 40 100 25 -- -- -- -- -- -- -- -- -- -- ­0.25 ­0.5 -- -- 250 250 160 160 250 -- ­0.5 -- ­1.0 Vdc Vdc --

(IC = ­500 mA, VCE = ­2.0 V) Collector­Emitter Saturation Voltage (IC = ­500 mAdc, IB = ­50 mAdc) Base­Emitter On Voltage (IC = ­500 mAdc, VCE = ­2.0 Vdc)

DYNAMIC CHARACTERISTICS
Current­Gain -- Bandwidth Product (IC = ­50 mAdc, VCE = ­2.0 Vdc, f = 100 MHz) Output Capacitance (VCB = ­10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = ­0.5 Vdc, IC = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%. fT Cob Cib -- -- -- 150 9.0 110 -- -- -- MHz pF pF

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2

BC636, BC636­16, BC638, BC640, BC640­16
-1000 -500 IC, COLLECTOR CURRENT (mA) -200 -100 -50 -20 -10 -5 -2 -1 -1 PD TA 25°C PD TC 25°C BC636 BC638 BC640 PD TA 25°C PD TC 25°C SOA = 1S hFE, DC CURRENT GAIN 200 -A 100 -L 500 VCE = -2 V -B

50

-2 -3 -4 -5 -7 -10 -20 -30 -40 -50 -70 -100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

20

-1

-3

-5

-10 -30 -50 -100 IC, COLLECTOR CURRENT (mA)

-300 -500 -1000

Figure 1. Active Region Safe Operating Area
BANDWIDTH PRODUCT (MHz)

Figure 2. DC Current Gain

500 300 V, VOLTAGE (VOLTS)

-1 -0.8 -0.6 -0.4 -0.2 VCE(sat) @ IC/IB = 10

VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = -2 V

100

VCE = -2 V

f T, CURRENT-GAIN

50

20 -1

-10 -100 IC, COLLECTOR CURRENT (mA)

-1000

0

-1

-100 -10 IC, COLLECTOR CURRENT (mA)

-1000

Figure 3. Current Gain Bandwidth Product

Figure 4. "Saturation" and "On" Voltages

V, TEMPERATURE COEFFICIENTS (mV/°C)

-0.2

-1.0 VCE = -2 VOLTS T = 0°C to +100°C V for VBE

-1.6

-2.2

-1

-3

-5

-10 -30 -50 -100 IC, COLLECTOR CURRENT (mA)

-300 -500 -1000

Figure 5. Temperature Coefficients

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3

BC636, BC636­16, BC638, BC640, BC640­16
PACKAGE DIMENSIONS TO­92 (TO­226) CASE 29­11 ISSUE AL
A R P L
SEATING PLANE

B

NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 ---

K

XX G H V
1

D J C SECTION X­X N N

DIM A B C D G H J K L N P R V

STYLE 14: PIN 1. EMITTER 2. COLLECTOR 3. BASE

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.

PUBLICATION ORDERING INFORMATION
Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303­675­2175 or 800­344­3860 Toll Free USA/Canada Fax: 303­675­2176 or 800­344­3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800­282­9855 Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 4­32­1 Nishi­Gotanda, Shinagawa­ku, Tokyo, Japan 141­0031 Phone: 81­3­5740­2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative.

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4

BC636/D




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