|
|
Part: BC847BLT3
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
Description: General Purpose Transistor Npn, Package: SOT-23 (TO-236), Pins=3
Company: ON Semiconductor
Datasheet: Download BC847BLT3 datasheet File size : 61 kB
Request For quote: Find where to buy BC847BLT3
Datasheet text preview:
BC846ALT1 Series
BC846, BC847 and BC848 are Preferred Devices
General Purpose Transistors
NPN Silicon
· Moisture Sensitivity Level: 1 · ESD Rating Human Body Model: >4000 V
ESD Rating Machine Model: >400 V
MAXIMUM RATINGS
Rating CollectorEmitter Voltage BC846 BC847, BC850 BC848, BC849 CollectorBase Voltage BC846 BC847, BC850 BC848, BC849 EmitterBase Voltage BC846 BC847, BC850 BC848, BC849 Collector Current Continuous IC VEBO 6.0 6.0 5.0 100 mAdc VCBO 80 50 30 Vdc Symbol VCEO 65 45 30 Vdc
1 2 3
http://onsemi.com
COLLECTOR 3 Value Unit Vdc 1 BASE 2 EMITTER
MARKING DIAGRAM
xx M
SOT23 CASE 318 STYLE 6
xx M
= Device Code = (See Table) = Date Code
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR5 Board (Note 1.) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient (Note 1.) Total Device Dissipation Alumina Substrate (Note 2.) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient (Note 2.) Junction and Storage Temperature Range Symbol PD Max 225 Unit mW
ORDERING INFORMATION
Device BC846ALT1 BC846ALT3 Package SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 Shipping 3000/Tape & Reel 10,000/Tape & Reel 3000/Tape & Reel 10,000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 10,000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 10,000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel
1.8 Rq J A PD 556 300
mW/°C °C/W mW
BC846BLT1 BC846BLT3 BC847ALT1 BC847BLT1
2.4 Rq J A TJ, Tstg 417 55 to +150
mW/°C °C/W °C
BC847CLT1 BC847CLT3 BC848ALT1 BC848BLT1 BC848BLT3 BC848CLT1 BC849BLT1 BC849CLT1 BC850BLT1 BC850CLT1
DEVICE MARKING
BC846ALT1 = 1A; BC846BLT1 = 1B; BC847ALT1 = 1E; BC847BLT1 = 1F; BC847CLT1 = 1G; BC848ALT1 = 1J; BC848BLT1 = 1K; BC848CLT1 = 1L; BC849BLT1 = 2B; BC849CLT1 = 2C; BC850BLT1 = 2F; BC850CLT1 = 2G 1. FR5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Preferred devices are recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2001
1
September, 2001 Rev. 4
Publication Order Number: BC846ALT1/D
BC846ALT1 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage BC846A,B (IC = 10 mA) BC847A,B,C, BC850B,C BC848A,B,C, BC849B,C CollectorEmitter Breakdown Voltage BC846A,B (IC = 10 µA, VEB = 0) BC847A,B,C BC850B,C BC848A,B,C, BC849B,C CollectorBase Breakdown Voltage (IC = 10 mA) EmitterBase Breakdown Voltage (IE = 1.0 mA) Collector Cutoff Current (VCB = 30 V) (VCB = 30 V, TA = 150°C) BC846A,B BC847A,B,C, BC850B,C BC848A,B,C, BC849B,C BC846A,B BC847A,B,C, BC850B,C BC848A,B,C, BC849B,C V(BR)CEO 65 45 30 80 50 30 80 50 30 6.0 6.0 5.0 15 5.0 V
V(BR)CES
V
V(BR)CBO
V
V(BR)EBO
V
ICBO
nA µA
ON CHARACTERISTICS
DC Current Gain (IC = 10 µA, VCE = 5.0 V) BC846A, BC847A, BC848A BC846B, BC847B, BC848B BC847C, BC848C BC846A, BC847A, BC848A BC846B, BC847B, BC848B, BC849B, BC850B BC847C, BC848C, BC849C, BC850C VCE(sat) VBE(sat) VBE(on) hFE 110 200 420 580 90 150 270 180 290 520 0.7 0.9 660 220 450 800 0.25 0.6 700 770 V V mV
(IC = 2.0 mA, VCE = 5.0 V)
CollectorEmitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) CollectorEmitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) BaseEmitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) BaseEmitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) BaseEmitter Voltage (IC = 2.0 mA, VCE = 5.0 V) BaseEmitter Voltage (IC = 10 mA, VCE = 5.0 V)
SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 V, f = 1.0 MHz) Noise Figure (IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz) BC846A,B, BC847A,B,C, BC848A,B,C BC849B,C, BC850B,C fT Cobo NF 10 4.0 100 4.5 MHz pF dB
Figure 1.
http://onsemi.com
2
BC846ALT1 Series
BC847, BC848, BC849, BC850
2.0 hFE , NORMALIZED DC CURRENT GAIN 1.5 1.0 0.8 0.6 0.4 0.3 0.2 VCE = 10 V TA = 25°C V, VOLTAGE (VOLTS) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.2 0.5 50 2.0 5.0 10 1.0 20 IC, COLLECTOR CURRENT (mAdc) 100 200 0 0.1 VCE(sat) @ IC/IB = 10 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mAdc) 50 70 100 TA = 25°C VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 10 V
Figure 1. Normalized DC Current Gain
2.0 TA = 25°C 1.6 IC = 200 mA 1.2 0.8 0.4 0 IC = IC = IC = 50 mA 10 mA 20 mA IC = 100 mA 1.0
Figure 2. "Saturation" and "On" Voltages
VCE , COLLECTOR-EMITTER VOLTAGE (V)
VB, TEMPERATURE COEFFICIENT (mV/ °C)
-55°C to +125°C 1.2 1.6 2.0 2.4 2.8
0.02
0.1 1.0 IB, BASE CURRENT (mA)
10
20
0.2
10 1.0 IC, COLLECTOR CURRENT (mA)
100
Figure 3. Collector Saturation Region
10 7.0 C, CAPACITANCE (pF) 5.0 3.0 Cob 2.0 Cib TA = 25°C f T, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) 400 300 200
Figure 4. BaseEmitter Temperature Coefficient
100 80 60 40 30 20 0.5 0.7 1.0
VCE = 10 V TA = 25°C
1.0
0.4 0.6 0.8 1.0
4.0 6.0 8.0 10 2.0 VR, REVERSE VOLTAGE (VOLTS)
20
40
2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc)
30
50
Figure 5. Capacitances
Figure 6. CurrentGain Bandwidth Product
http://onsemi.com
3
BC846ALT1 Series
BC846
1.0 hFE , DC CURRENT GAIN (NORMALIZED) VCE = 5 V TA = 25°C 2.0 1.0 0.5 0.2 0.1 0.2 10 100 1.0 IC, COLLECTOR CURRENT (mA) V, VOLTAGE (VOLTS) TA = 25°C 0.8 VBE(sat) @ IC/IB = 10 0.6 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.2 0.5 1.0 10 20 2.0 5.0 IC, COLLECTOR CURRENT (mA) 50 100 200 VBE @ VCE = 5.0 V
Figure 7. DC Current Gain
2.0 TA = 25°C 1.6 20 mA 1.2 0.8 0.4 0 IC = 10 mA 50 mA 100 mA 200 mA -1.0 -1.4 -1.8 -2.2 -2.6 -3.0
Figure 8. "On" Voltage
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
VB, TEMPERATURE COEFFICIENT (mV/ °C)
VB for VBE
-55°C to 125°C
0.02
0.05
0.1
0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA)
5.0
10
20
0.2
0.5
10 20 5.0 1.0 2.0 IC, COLLECTOR CURRENT (mA)
50
100
200
Figure 9. Collector Saturation Region
Figure 10. BaseEmitter Temperature Coefficient
TA = 25°C C, CAPACITANCE (pF) 20 Cib
f T, CURRENT-GAIN - BANDWIDTH PRODUCT
40
500 200 100 50 20
VCE = 5 V TA = 25°C
10 6.0 4.0 Cob
2.0
0.1
0.2
1.0 2.0 10 20 0.5 5.0 VR, REVERSE VOLTAGE (VOLTS)
50
100
1.0 5.0 10 50 100 IC, COLLECTOR CURRENT (mA)
Figure 11. Capacitance
Figure 12. CurrentGain Bandwidth Product
http://onsemi.com
4
BC846ALT1 Series INFORMATION FOR USING THE SOT23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection
0.037 0.95
interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process.
0.037 0.95
0.079 2.0 0.035 0.9 0.031 0.8
inches mm
SOT23 SOT23 POWER DISSIPATION The power dissipation of the SOT23 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA. Using the values provided on the data sheet for the SOT23 package, PD can be calculated as follows:
PD = TJ(max) TA R J A SOLDERING PRECAUTIONS
The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 225 milliwatts.
PD = 150°C 25°C 556°C/W = 225 milliwatts
The 556°C/W for the SOT23 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT23 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal CladTM. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint.
The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. · Always preheat the device. · The delta temperature between the preheat and soldering should be 100°C or less.* · When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10°C. · The soldering temperature and time shall not exceed 260°C for more than 10 seconds. · When shifting from preheating to soldering, the maximum temperature gradient shall be 5°C or less. · After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. · Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device.
http://onsemi.com
5
Others parts begin by bc
BC-1 BC-2 BC-3 BC-4 BC-5 BC-6 BC-7 BC-8 BC-9 BC-10 BC-11 BC-12 BC-13 BC-14 BC-15 BC-16 BC-17 BC-18 BC-19 BC-20 BC-21 BC-22 BC-23
|
|
|
