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Part: BC847BP

Category:

Description: Dual General Purpose Transistors

Company: ON Semiconductor

Datasheet: Download BC847BP datasheet     File size : 61 kB

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Datasheet text preview:
BC846BPDW1T1, BC847BPDW1T1 Series, BC848CPDW1T1 Series Dual General Purpose Transistors
NPN/PNP Duals (Complimentary)
These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is designed for low power surface mount applications.
Features
(3)

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(2)

(1)

Q1

Q2

· Pb-Free Package is Available
MAXIMUM RATINGS - NPN
Rating Collector-Emitter Voltage BC846 BC847 BC848 BC846 BC847 BC848 Symbol VCEO Value 65 45 30 80 50 30 6.0 100 Unit V

(4)

(5)

(6)

MARKING DIAGRAM
6 SOT-363 CASE 419B STYLE 1 1 xx = Device Code d = Date Code

Collector-Base Voltage

VCBO

V 1 V mAdc

XXd

Emitter-Base Voltage Collector Current - Continuous

VEBO IC

MAXIMUM RATINGS - PNP
Rating Collector-Emitter Voltage BC846 BC847 BC848 BC846 BC847 BC848 Symbol VCEO Value -65 -45 -30 -80 -50 -30 -5.0 -100 Unit V

ORDERING INFORMATION
V Device BC846BPDW1T1 V mAdc BC847BPDW1T1 Mark Package BB BF Shipping

Collector-Base Voltage

VCBO

SOT-363 3000 Units/Reel SOT-363 3000 Units/Reel SOT-363 3000 Units/Reel (Pb-Free) SOT-363 3000 Units/Reel SOT-363 3000 Units/Reel

Emitter-Base Voltage Collector Current - Continuous

VEBO IC

BC847BPDW1T1G BF BC847CPDW1T1 BC848CPDW1T1

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.

BG BL

THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation Per Device FR- 5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature 1. FR-5 = 1.0 x 0.75 x 0.062 in. Symbol PD Max 380 250 3.0 Rq J A TJ, Tstg 328 - 55 to +150 Unit mW For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.

mW/°C °C/W °C

© Semiconductor Components Industries, LLC, 2004

1

June, 2004 - Rev. 3

Publication Order Number: BC846BPDW1T1/D

BC846BPDW1T1, BC847BPDW1T1 Series, BC848CPDW1T1 Series
ELECTRICAL CHARACTERISTICS (NPN) (TA = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage (IC = 10 mA) V(BR)CEO BC846 Series BC847 Series BC848 Series V(BR)CES BC846 Series BC847B Only BC848 Series V(BR)CBO BC846 Series BC847 Series BC848 Series V(BR)EBO BC846 Series BC847 Series BC848 Series ICBO 6.0 6.0 5.0 - - - - - - - - - - 15 5.0 nA mA 80 50 30 - - - - - - V 80 50 30 - - - - - - V 65 45 30 - - - - - - V V Symbol Min Typ Max Unit

Collector - Emitter Breakdown Voltage (IC = 10 mA, VEB = 0)

Collector - Base Breakdown Voltage (IC = 10 mA)

Emitter - Base Breakdown Voltage (IE = 1.0 mA)

Collector Cutoff Current (VCB = 30 V) (VCB = 30 V, TA = 150°C) ON CHARACTERISTICS DC Current Gain (IC = 10 mA, VCE = 5.0 V)

hFE BC846B, BC847B BC847C, BC848C BC846B, BC847B BC847C, BC848C VCE(sat) VBE(sat) VBE(on) - - 200 420 - - - - 580 - 150 270 290 520 - - 0.7 0.9 660 - - - 475 800 0.25 0.6 - - 700 770

-

(IC = 2.0 mA, VCE = 5.0 V)

Collector - Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Collector - Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) Base - Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Base - Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) Base - Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V) Base - Emitter Voltage (IC = 10 mA, VCE = 5.0 V) SMALL- SIGNAL CHARACTERISTICS Current - Gain - Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 V, f = 1.0 MHz) Noise Figure (IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)

V V mV

fT Co b o NF

100 - -

- - -

- 4.5 10

MHz pF dB

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2

BC846BPDW1T1, BC847BPDW1T1 Series, BC848CPDW1T1 Series
ELECTRICAL CHARACTERISTICS (PNP) (TA = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage (IC = -10 mA) V(BR)CEO BC846 Series BC847 Series BC848 Series V(BR)CES BC846 Series BC847 Series BC848 Series V(BR)CBO BC846 Series BC847 Series BC848 Series V(BR)EBO BC846 Series BC847 Series BC848 Series ICBO -5.0 -5.0 -5.0 - - - - - - - - - - -15 -4.0 nA mA -80 -50 -30 - - - - - - V -80 -50 -30 - - - - - - V -65 -45 -30 - - - - - - V V Symbol Min Typ Max Unit

Collector - Emitter Breakdown Voltage (IC = -10 mA, VEB = 0)

Collector - Base Breakdown Voltage (IC = -10 mA)

Emitter - Base Breakdown Voltage (IE = -1.0 mA)

Collector Cutoff Current (VCB = -30 V) Collector Cutoff Current (VCB = -30 V, TA = 150°C) ON CHARACTERISTICS DC Current Gain (IC = -10 mA, VCE = -5.0 V)

hFE BC846B, BC847B BC847C, BC848C BC846B, BC847B BC847C, BC848C VCE(sat) - - VBE(sat) - - VBE(on) -0.6 - - - -0.75 -0.82 -0.7 -0.9 - - - - -0.3 -0.65 - - 200 420 150 270 290 520 - - 475 800

-

(IC = -2.0 mA, VCE = -5.0 V)

Collector - Emitter Saturation Voltage (IC = -10 mA, IB = -0.5 mA) (IC = -100 mA, IB = -5.0 mA) Base - Emitter Saturation Voltage (IC = -10 mA, IB = -0.5 mA) (IC = -100 mA, IB = -5.0 mA) Base - Emitter On Voltage (IC = -2.0 mA, VCE = -5.0 V) (IC = -10 mA, VCE = -5.0 V) SMALL- SIGNAL CHARACTERISTICS Current - Gain - Bandwidth Product (IC = -10 mA, VCE = -5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = -10 V, f = 1.0 MHz) Noise Figure (IC = -0.2 mA, VCE = -5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)

V

V

V

fT Co b NF

100 - -

- - -

- 4.5 10

MHz pF dB

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3

BC846BPDW1T1, BC847BPDW1T1 Series, BC848CPDW1T1 Series
TYPICAL NPN CHARACTERISTICS - BC846
1.0 hFE , DC CURRENT GAIN (NORMALIZED) VCE = 5 V TA = 25°C 2.0 1.0 0.5 0.2 0.1 0.2 10 100 1.0 IC, COLLECTOR CURRENT (mA) V, VOLTAGE (VOLTS) TA = 25°C 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 5.0 V 0.4

0.2 VCE(sat) @ IC/IB = 10 0 0.2 0.5 1.0 10 20 2.0 5.0 IC, COLLECTOR CURRENT (mA) 50 100 200

Figure 1. DC Current Gain

Figure 2. "On" Voltage

VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

TA = 25°C 1.6 20 mA 1.2 IC = 10 mA 50 mA 100 mA 200 mA

VB, TEMPERATURE COEFFICIENT (mV/ °C)

2.0

-1.0

-1.4

-1.8 qVB for VBE -2.2 -55°C to 125°C

0.8

0.4

-2.6

0

0.02

0.05

0.1

0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA)

5.0

10

20

-3.0

0.2

0.5

10 20 1.0 2.0 5.0 IC, COLLECTOR CURRENT (mA)

50

100

200

Figure 3. Collector Saturation Region

Figure 4. Base-Emitter Temperature Coefficient

TA = 25°C C, CAPACITANCE (pF) 20 Cib 10 6.0 4.0 Cob

f T, CURRENT-GAIN - BANDWIDTH PRODUCT

40

500

VCE = 5 V TA = 25°C

200 100 50 20

2.0

0.1

0.2

0.5

1.0 2.0 10 20 5.0 VR, REVERSE VOLTAGE (VOLTS)

50

100

1.0 5.0 10 50 100 IC, COLLECTOR CURRENT (mA)

Figure 5. Capacitance

Figure 6. Current-Gain - Bandwidth Product

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4

BC846BPDW1T1, BC847BPDW1T1 Series, BC848CPDW1T1 Series
TYPICAL PNP CHARACTERISTICS -- BC846
-1.0 hFE , DC CURRENT GAIN (NORMALIZED) VCE = -5.0 V TA = 25°C 2.0 1.0 0.5 0.2 -0.1 -0.2 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (AMP) V, VOLTAGE (VOLTS) TJ = 25°C -0.8 VBE(sat) @ IC/IB = 10 -0.6 VBE @ VCE = -5.0 V

-0.4

-0.2 VCE(sat) @ IC/IB = 10 0 -0.2 -0.5 -50 -100 -200 -5.0 -10 -20 -1.0 -2.0 IC, COLLECTOR CURRENT (mA)

Figure 7. DC Current Gain

Figure 8. "On" Voltage

VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

VB, TEMPERATURE COEFFICIENT (mV/ °C)

-2.0

-1.0

-1.6 IC = -10 mA -20 mA -50 mA -100 mA -200 mA

-1.4

-1.2

-1.8

qVB for VBE

-55°C to 125°C

-0.8

-2.2

-0.4 TJ = 25°C 0 -0.02 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 IB, BASE CURRENT (mA) -5.0 -10 -20

-2.6

-3.0 -0.2

-0.5 -1.0

-50 -2.0 -5.0 -10 -20 IC, COLLECTOR CURRENT (mA)

-100 -200

Figure 9. Collector Saturation Region

Figure 10. Base-Emitter Temperature Coefficient

f T, CURRENT-GAIN - BANDWIDTH PRODUCT

40 TJ = 25°C C, CAPACITANCE (pF) 20 Cib

500

VCE = -5.0 V

200 100 50 20 -100 -1.0 -10 IC, COLLECTOR CURRENT (mA)

10 8.0 6.0 4.0 2.0 -0.1 -0.2 Cob

-0.5

-1.0 -2.0 -5.0 -10 -20 VR, REVERSE VOLTAGE (VOLTS)

-50 -100

Figure 11. Capacitance

Figure 12. Current-Gain - Bandwidth Product

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5




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