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Part: BC856CLT1
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
-> PNP
Description: General Purpose PNP Silicon
Company: ON Semiconductor
Datasheet: Download BC856CLT1 datasheet File size : 49 kB
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Datasheet text preview:
BC856ALT1 Series
Preferred Devices
General Purpose Transistors
PNP Silicon
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating Collector-Emitter Voltage BC856 BC857 BC858, BC859 BC856 BC857 BC858, BC859 Symbol VCEO Value 65 45 30 80 50 30 5.0 100 Unit V
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COLLECTOR 3 1 BASE 2 EMITTER
Collector-Base Voltage
VCBO
V
EmitterBase Voltage Collector Current Continuous
VEBO IC
V mAdc
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR5 Board, (Note 1.) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (Note 2.) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD 225 1.8 Rq J A PD 300 2.4 Rq J A TJ, Tstg 417 55 to +150 mW mW/°C °C/W 556 mW mW/°C °C/W 1 2 SOT23 CASE 318 STYLE 6 1 xx xx 2 = Device Code = (See Table Below) Max Unit 3
MARKING DIAGRAM
3
ORDERING INFORMATION
°C Device Package Mark 3A 3B 3E 3F 3J 3K 3L 4B 4C Shipping 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel
1. FR5 = 1.0 x 0.75 x 0.062 in 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
BC856ALT1 SOT23 BC856BLT1 SOT23 BC857ALT1 SOT23 BC857BLT1 SOT23 BC858ALT1 SOT23 BC858BLT1 SOT23 BC858CLT1 SOT23 BC859BLT1 SOT23 BC859CLT1 SOT23
Preferred devices are recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2001
January, 2001 Rev. 2
Publication Order Number: BC856ALT1/D
BC856ALT1 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (IC = 10 mA) CollectorEmitter Breakdown Voltage (IC = 10 µA, VEB = 0) CollectorBase Breakdown Voltage (IC = 10 mA) EmitterBase Breakdown Voltage (IE = 1.0 mA) BC856 Series BC857 Series BC858, BC859 Series BC856 Series BC857 Series BC858, BC859 Series BC856 Series BC857 Series BC858, BC859 Series BC856 Series BC857 Series BC858, BC859 Series V(BR)CEO 65 45 30 80 50 30 80 50 30 5.0 5.0 5.0 15 4.0 V
V(BR)CES
V
V(BR)CBO
V
V(BR)EBO
V
Collector Cutoff Current (VCB = 30 V) Collector Cutoff Current (VCB = 30 V, TA = 150°C)
ICBO
nA µA
ON CHARACTERISTICS
DC Current Gain (IC = 10 µA, VCE = 5.0 V) BC856A, BC857A, BC858A BC856B, BC857B, BC858B BC858C BC856A, BC857A, BC858A BC856B, BC857B, BC858B, BC859B BC858C, BC859C VCE(sat) VBE(sat) VBE(on) 0.6 0.75 0.82 0.7 0.9 V 0.3 0.65 V hFE 125 220 420 90 150 270 180 290 520 250 475 800 V
(IC = 2.0 mA, VCE = 5.0 V)
CollectorEmitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) (IC = 100 mA, IB = 5.0 mA) BaseEmitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) (IC = 100 mA, IB = 5.0 mA) BaseEmitter On Voltage (IC = 2.0 mA, VCE = 5.0 V) (IC = 10 mA, VCE = 5.0 V)
SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 V, f = 1.0 MHz) Noise Figure (IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz) BC856, BC857, BC858 Series BC859 Series fT Co b NF 10 4.0 100 4.5 MHz pF dB
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2
BC856ALT1 Series
BC857/BC858/BC859
2.0 hFE , NORMALIZED DC CURRENT GAIN 1.5 1.0 0.7 0.5 VCE = -10 V TA = 25°C V, VOLTAGE (VOLTS) -1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0.2 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 IC, COLLECTOR CURRENT (mAdc) -100 -200 0 -0.1 -0.2 VCE(sat) @ IC/IB = 10 -0.5 -1.0 -2.0 -5.0 -10 -20 IC, COLLECTOR CURRENT (mAdc) -50 -100 VBE(on) @ VCE = -10 V TA = 25°C VBE(sat) @ IC/IB = 10
0.3
Figure 1. Normalized DC Current Gain
-2.0 TA = 25°C -1.6 -1.2 -0.8 -0.4 0 IC = -10 mA IC = -50 mA IC = -20 mA IC = -200 mA IC = -100 mA 1.0 VB , TEMPERATURE COEFFICIENT (mV/ °C) 1.2 1.6 2.0 2.4 2.8
Figure 2. "Saturation" and "On" Voltages
VCE , COLLECTOR-EMITTER VOLTAGE (V)
-55°C to +125°C
-0.02
-0.1 -1.0 IB, BASE CURRENT (mA)
-10 -20
-0.2
-10 -1.0 IC, COLLECTOR CURRENT (mA)
-100
Figure 3. Collector Saturation Region
10 7.0 C, CAPACITANCE (pF) 5.0 3.0 2.0 Cob Cib TA = 25°C f T, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) 400 300 200 150 100 80 60 40 30
Figure 4. BaseEmitter Temperature Coefficient
VCE = -10 V TA = 25°C
1.0 -0.4 -0.6
-1.0
-2.0
-4.0 -6.0
-10
-20 -30 -40
20 -0.5
-1.0
-2.0 -3.0
-5.0
-10
-20
-30
-50
VR, REVERSE VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mAdc)
Figure 5. Capacitances
Figure 6. CurrentGain Bandwidth Product
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3
BC856ALT1 Series
BC856
-1.0 hFE , DC CURRENT GAIN (NORMALIZED) VCE = -5.0 V TA = 25°C 2.0 1.0 0.5 0.2 -0.1 -0.2 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (AMP) V, VOLTAGE (VOLTS) TJ = 25°C -0.8 -0.6 -0.4 -0.2 VCE(sat) @ IC/IB = 10 0 -0.2 -0.5 -50 -100 -200 -5.0 -10 -20 -1.0 -2.0 IC, COLLECTOR CURRENT (mA) VBE(sat) @ IC/IB = 10 VBE @ VCE = -5.0 V
Figure 7. DC Current Gain
-2.0 -1.6 -1.2 -0.8 -0.4 TJ = 25°C 0 -0.02 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 IB, BASE CURRENT (mA) -5.0 -10 -20 IC = -10 mA -20 mA -50 mA -100 mA -200 mA -1.0 -1.4 -1.8 -2.2 -2.6 -3.0 -0.2
Figure 8. "On" Voltage
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
VB, TEMPERATURE COEFFICIENT (mV/ °C)
VB for VBE
-55°C to 125°C
-0.5 -1.0
-50 -2.0 -5.0 -10 -20 IC, COLLECTOR CURRENT (mA)
-100 -200
Figure 9. Collector Saturation Region
Figure 10. BaseEmitter Temperature Coefficient
f T, CURRENT-GAIN - BANDWIDTH PRODUCT
40 TJ = 25°C Cib
500 200 100 50 20
VCE = -5.0 V
C, CAPACITANCE (pF)
20
10 8.0 6.0 4.0 2.0 -0.1 -0.2 Cob
-0.5
-1.0 -2.0 -5.0 -10 -20 VR, REVERSE VOLTAGE (VOLTS)
-50 -100
-100 -1.0 -10 IC, COLLECTOR CURRENT (mA)
Figure 11. Capacitance
Figure 12. CurrentGain Bandwidth Product
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4
BC856ALT1 Series
1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 20 t, TIME (ms) 0.1
D = 0.5 0.2 0.05 SINGLE PULSE SINGLE PULSE P(pk) t1 t2 DUTY CYCLE, D = t1/t2 50 100 200 500
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
ZJC(t) = r(t) RJC RJC = 83.3°C/W MAX ZJA(t) = r(t) RJA RJA = 200°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) 1.0 k 2.0 k 5.0 k 10 k
Figure 13. Thermal Response
-200 IC, COLLECTOR CURRENT (mA) -100 -50 TA = 25°C
1s TJ = 25°C
3 ms
-10 -5.0 -2.0 -1.0
BC558, BC559 BC557 BC556 BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT -5.0 -10 -30 -45 -65 -100 VCE, COLLECTOR-EMITTER VOLTAGE (V)
The safe operating area curves indicate ICVCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 14 is based upon TJ(pk) = 150°C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) 150°C. TJ(pk) may be calculated from the data in Figure 13. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the secondary breakdown.
Figure 14. Active Region Safe Operating Area
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5
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