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Part: BCW30LT3
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
Description: General Purpose Transistor Pnp, Package: SOT-23 (TO-236), Pins=3
Company: ON Semiconductor
Datasheet: Download BCW30LT3 datasheet File size : 64 kB
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Datasheet text preview:
BCW30LT1 General Purpose Transistors
PNP Silicon
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MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Symbol VCEO VCBO VEBO IC Value 32 32 5.0 100 Unit Vdc Vdc Vdc mAdc 1 BASE
COLLECTOR 3
2 EMITTER
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR-5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature (1) FR 5 = 1.0 0.75 (2) Alumina = 0.4 0.3 Symbol PD 225 1.8 RJA PD 556 300 2.4 RJA TJ, Tstg 417 55 to +150 mW/°C °C/W mW mW/°C °C/W °C C2x SOT23 (TO236AB) CASE 318 STYLE 6 1 2 Value Unit mW 3
DEVICE MARKING
0.062 in. 0.024 in. 99.5% alumina.
x = Monthly Date Code
ORDERING INFORMATION
Device BCW30LT1 Package SOT23 Shipping 3000 Units/Rail
© Semiconductor Components Industries, LLC, 1999
1
November, 1999 Rev. 0
Publication Order Number: BCW30LT1/D
BCW30LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (IC = 2.0 mAdc, IE = 0) CollectorEmitter Breakdown Voltage (IC = 100 µAdc, VEB = 0) CollectorBase Breakdown Voltage (IC = 10 µAdc, IC = 0) EmitterBase Breakdown Voltage (IE = 10 µAdc, IC = 0) Collector Cutoff Current (VCB = 32 Vdc, IE = 0) (VCB = 32 Vdc, IE = 0, TA = 100°C) V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICBO -- -- 100 10 nAdc µAdc 32 32 32 5.0 -- -- -- -- Vdc Vdc Vdc Vdc
ON CHARACTERISTICS
DC Current Gain (IC = 2.0 mAdc, VCE = 5.0 Vdc) CollectorEmitter Saturation Voltage (IC = 10 mAdc, IB = 0.5 mAdc) BaseEmitter On Voltage (IC = 2.0 mAdc, VCE = 5.0 Vdc) hFE 215 VCE(sat) -- VBE(on) 0.6 0.75 0.3 Vdc 500 -- Vdc
SMALLSIGNAL CHARACTERISTICS
Output Capacitance (IE = 0, VCB = 10 Vdc, f = 1.0 MHz) Noise Figure (IC = 0.2 mAdc, VCE = 5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz) Cobo -- NF -- 10 7.0 dB pF
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2
BCW30LT1
TYPICAL NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)
10 7.0 en, NOISE VOLTAGE (nV) 5.0 IC = 10 µA 30 µA 3.0 2.0 1.0 mA 100 µA 300 µA BANDWIDTH = 1.0 Hz RS 0 In, NOISE CURRENT (pA) 1.0 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 1.0 10 20 50 100 200 500 1.0 k f, FREQUENCY (Hz) 2.0 k 5.0 k 10 k 0.1 10 20 50 100 200 500 1.0 k 2.0 k f, FREQUENCY (Hz) 5.0 k 10 k 300 µA 100 µA 30 µA 10 µA IC = 1.0 mA
BANDWIDTH = 1.0 Hz RS
Figure 1. Noise Voltage
Figure 2. Noise Current
NOISE FIGURE CONTOURS
(VCE = 5.0 Vdc, TA = 25°C)
1.0 M 500 k 200 k 100 k 50 k 20 k 10 k 5.0 k 2.0 k 1.0 k 500 200 100 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (µA) 0.5 dB 1.0 dB 2.0 dB 3.0 dB 5.0 dB 500 700 1.0 k BANDWIDTH = 1.0 Hz RS , SOURCE RESISTANCE (OHMS) 1.0 M 500 k 200 k 100 k 50 k 20 k 10 k 5.0 k 2.0 k 1.0 k 500 200 100 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (µA)
RS , SOURCE RESISTANCE (OHMS)
BANDWIDTH = 1.0 Hz
0.5 dB 1.0 dB 2.0 dB 3.0 dB 5.0 dB 500 700 1.0 k
Figure 3. Narrow Band, 100 Hz
1.0 M 500 k 200 k 100 k 50 k 20 k 10 k 5.0 k 2.0 k 1.0 k 500 200 100 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (µA) 1.0 dB 2.0 dB 3.0 dB 5.0 dB 500 700 1.0 k
Figure 4. Narrow Band, 1.0 kHz
RS , SOURCE RESISTANCE (OHMS)
10 Hz to 15.7 kHz
Noise Figure is Defined as: NF 0.5 dB
+ 20 log10
e
n2
) 4KTRS ) In 2RS2 2
4KTRS
1
en = Noise Voltage of the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzman's Constant (1.38 x 1023 j/°K) T = Temperature of the Source Resistance (°K) RS = Source Resistance (Ohms)
Figure 5. Wideband http://onsemi.com
3
BCW30LT1
TYPICAL STATIC CHARACTERISTICS
500 TJ = 125°C 25°C
h FE, DC CURRENT GAIN
300
55°C 200 180 160 140 0.003 0.005 BCW29LT1 VCE = 1.0 V VCE = 10 V 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 IC, COLLECTOR CURRENT (mA) 3.0 5.0 7.0 10 20 30 50 70 100
Figure 6. DC Current Gain
VCE , COLLECTOREMITTER VOLTAGE (VOLTS)
1.0 IC, COLLECTOR CURRENT (mA) TA = 25°C BCW29LT1 0.8 IC = 1.0 mA 10 mA 50 mA 100 mA
100
TA = 25°C PULSE WIDTH = 300 µs 80 DUTY CYCLE 2.0% 300 µA 60
IB = 400 µA 350 µA 250 µA 200 µA 150 µA
0.6
0.4
40
100 µA 50 µA
0.2
20
0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA)
0 5.0 10 20 0 5.0 10 15 20 25 30 35 VCE, COLLECTOREMITTER VOLTAGE (VOLTS) 40
Figure 7. Collector Saturation Region
Figure 8. Collector Characteristics
TJ = 25°C 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 100
V, TEMPERATURE COEFFICIENTS (mV/°C)
1.4
1.6 *APPLIES for IC/IB hFE/2 0.8 *qVC for VCE(sat) 0 25°C to 125°C 55°C to 25°C
0.8 25°C to 125°C 1.6
qVB for VBE
0.2
55°C to 25°C
2.4 0.1
1.0 2.0 5.0 10 20 0.5 IC, COLLECTOR CURRENT (mA)
50
100
Figure 9. "On" Voltages
Figure 10. Temperature Coefficients
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BCW30LT1
TYPICAL DYNAMIC CHARACTERISTICS
500 300 200 100 70 50 30 20 td @ VBE(off) = 0.5 V 10 7.0 5.0 1.0 tr VCC = 3.0 V IC/IB = 10 TJ = 25°C t, TIME (ns) 1000 700 500 300 200 100 70 50 30 20 10 1.0 ts VCC = 3.0 V IC/IB = 10 IB1 = IB2 TJ = 25°C
t, TIME (ns)
tf
2.0
3.0
20 30 5.0 7.0 10 IC, COLLECTOR CURRENT (mA)
50 70
100
2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA)
50 70 100
Figure 11. TurnOn Time
f T, CURRENTGAIN -- BANDWIDTH PRODUCT (MHz)
Figure 12. TurnOff Time
500 TJ = 25°C 300 200 VCE = 20 V 5.0 V C, CAPACITANCE (pF)
10 TJ = 25°C 7.0 Cib 5.0
3.0 2.0 Cob
100 70 50 0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
30
50
1.0 0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
IC, COLLECTOR CURRENT (mA)
VR, REVERSE VOLTAGE (VOLTS)
Figure 13. CurrentGain -- Bandwidth Product
Figure 14. Capacitance
20 10 hie , INPUT IMPEDANCE (k ) 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 hfe 300 @ IC = 1.0 mA hoe, OUTPUT ADMITTANCE (m mhos) VCE = 10 Vdc f = 1.0 kHz TA = 25°C
200 100 70 50 30 20 10 7.0 5.0 3.0 2.0 0.1 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 VCE = 10 Vdc f = 1.0 kHz TA = 25°C hfe 300 @ IC = 1.0 mA
Figure 15. Input Impedance
Figure 16. Output Admittance
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