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Part: BCX71JLT1
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
Description: General Purpose Transistor , Package: SOT-23 (TO-236), Pins=3
Company: ON Semiconductor
Datasheet: Download BCX71JLT1 datasheet File size : 326 kB
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Datasheet text preview:
BCX71J General Purpose Transistor
PNP Silicon
· Moisture Sensitivity Level: 1
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC Value 45 45 5.0 100 Unit Vdc Vdc Vdc mAdc 1 BASE 2 EMITTER COLLECTOR 3
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THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation (Note 1.) TA = 25°C Derate above 25°C Storage Temperature Thermal Resistance Junction-to-Ambient (Note 1.) Symbol PD Max 350 2.8 Tstg Rq J A 150 357 Unit mW mW/°C °C °C/W 1
3
2 SOT23 CASE 318 STYLE 6
1. Package mounted on 99.5% alumina 10 X 8 X 0.6 mm.
MARKING DIAGRAM
BJ M
BJ M
= Specific Device Marking = Date Code
ORDERING INFORMATION
Device BCX71JLT1 Package SOT23 Shipping 3000/Tape & Reel
© Semiconductor Components Industries, LLC, 2002
1
May, 2002 Rev. 1
Publication Order Number: BCX71J/D
BCX71J
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0) CollectorBase Breakdown Voltage (IE = 1.0 mAdc, IE = 0) Collector Cutoff Current (VCE = 32 Vdc) (VCE = 32 Vdc, TA = 150°C) V(BR)CEO 45 V(BR)EBO 5.0 ICES 20 20 nAdc mAdc Vdc Vdc
ON CHARACTERISTICS
DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) (IC = 2.0 mAdc, VCE = 5.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 2.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) CollectorEmitter Saturation Voltage (IC = 10 mAdc, IB = 0.25 mAdc) (IC = 50 mAdc, IB = 1.25 mAdc) BaseEmitter Saturation Voltage (IC = 1.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc) BaseEmitter On Voltage (IC = 2.0 mAdc, VCE = 5.0 Vdc) Output Capacitance (VCE = 10 Vdc, IC = 0, f = 1.0 MHz) Noise Figure (IC = 0.2 mAdc, VCE = 5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz) hFE 40 250 100 250 VCE(sat) VBE(sat) 0.6 0.68 VBE(on) 0.6 Co b o NF 6.0 6.0 dB 0.75 pF 0.85 1.05 Vdc 0.25 0.55 Vdc 460 500 Vdc
SWITCHING CHARACTERISTICS
TurnOn Time (IC = 10 mAdc, IB1 = 1.0 mAdc) TurnOff Time (IB2 = 1.0 mAdc, VBB = 3.6 Vdc, R1 = R2 = 5.0 kW, RL = 990 W) ton toff 800 150 ns ns
TYPICAL NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)
10 7.0 en, NOISE VOLTAGE (nV) 5.0 IC = 10 mA 30 mA 3.0 2.0 1.0 mA 100 mA 300 mA BANDWIDTH = 1.0 Hz RS 0 In, NOISE CURRENT (pA) 1.0 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 1.0 10 50 100 200 500 1.0 k 2.0 k f, FREQUENCY (Hz) 0.1 5.0 k 10 k 10 20 50 300 mA 100 mA 30 mA 10 mA 100 200 500 1.0 k 2.0 k f, FREQUENCY (Hz) 5.0 k 10 k IC = 1.0 mA
BANDWIDTH = 1.0 Hz RS
20
Figure 1. Noise Voltage
Figure 2. Noise Current
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BCX71J
NOISE FIGURE CONTOURS
(VCE = 5.0 Vdc, TA = 25°C)
1.0 M 500 k 200 k 100 k 50 k 20 k 10 k 5.0 k 2.0 k 1.0 k 500 200 100 0.5 dB 1.0 dB 2.0 dB 3.0 dB 5.0 dB 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 700 1.0 k BANDWIDTH = 1.0 Hz 1.0 M 500 k 200 k 100 k 50 k 20 k 10 k 5.0 k 2.0 k 1.0 k 500 200 100
RS , SOURCE RESISTANCE (OHMS)
RS , SOURCE RESISTANCE (OHMS)
BANDWIDTH = 1.0 Hz
0.5 dB 1.0 dB 2.0 dB 3.0 dB 5.0 dB 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 700 1.0 k
Figure 3. Narrow Band, 100 Hz
Figure 4. Narrow Band, 1.0 kHz
RS , SOURCE RESISTANCE (OHMS)
1.0 M 500 k 200 k 100 k 50 k 20 k 10 k 5.0 k 2.0 k 1.0 k 500 200 100 0.5 dB
10 Hz to 15.7 kHz
Noise Figure is Defined as: NF + 20 log10
en2 ) 4K4TKRTS ) In 2RS2 1 2 RS
1.0 dB 2.0 dB 3.0 dB 5.0 dB 10 20 30 50 70 100 200 300 500 700 1.0 k IC, COLLECTOR CURRENT (mA)
en = Noise Voltage of the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzman's Constant (1.38 x 1023 j/°K) T = Temperature of the Source Resistance (°K) RS = Source Resistance (Ohms)
Figure 5. Wideband
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3
BCX71J
TYPICAL STATIC CHARACTERISTICS
400
TJ = 125°C 25°C
h FE, DC CURRENT GAIN
200
-55°C 100 80 60 40 0.003 0.005 VCE = 1.0 V VCE = 10 V 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 IC, COLLECTOR CURRENT (mA) 2.0 3.0 5.0 7.0 10 20 30 50 70 100
Figure 6. DC Current Gain
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
1.0 TA = 25°C 0.8 0.6 0.4 0.2 0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) IC = 1.0 mA 10 mA 50 mA 100 mA IC, COLLECTOR CURRENT (mA)
100
TA = 25°C PULSE WIDTH = 300 ms 80 DUTY CYCLE 2.0% 300 mA 60 40 20 0
IB = 400 mA 350 mA 250 mA 200 mA 150 mA 100 mA 50 mA
5.0 10
20
0
5.0 10 15 20 25 30 35 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
40
Figure 7. Collector Saturation Region
Figure 8. Collector Characteristics
1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 0.2 0 0.1
TJ = 25°C
V, TEMPERATURE COEFFICIENTS (mV/°C)
1.4
1.6 *APPLIES for IC/IB hFE/2 0.8 0 0.8 25°C to 125°C 1.6 2.4 0.1 qVB for VBE 0.2 -55°C to 25°C 50 100 *qVC for VCE(sat) 25°C to 125°C -55°C to 25°C
VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 1.0 V
VCE(sat) @ IC/IB = 10 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 100
0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA)
Figure 9. "On" Voltages
Figure 10. Temperature Coefficients
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4
BCX71J
TYPICAL DYNAMIC CHARACTERISTICS
500 300 200 100 70 50 30 20 10 7.0 5.0 1.0 td @ VBE(off) = 0.5 V tr 1000 700 500 300 200 t, TIME (ns) 100 70 50 30 20 50 70 100 10 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) -50 -70 -100 ts
VCC = 3.0 V IC/IB = 10 TJ = 25°C
VCC = -3.0 V IC/IB = 10 IB1 = IB2 TJ = 25°C
t, TIME (ns)
tf
2.0
3.0
20 30 5.0 7.0 10 IC, COLLECTOR CURRENT (mA)
Figure 11. TurnOn Time
BANDWIDTH PRODUCT (MHz)
Figure 12. TurnOff Time
500 TJ = 25°C 300 200 VCE = 20 V 5.0 V C, CAPACITANCE (pF)
10 7.0 5.0 Cib TJ = 25°C
3.0 2.0 Cob
f T, CURRENT-GAIN
100 70 50 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50
1.0 0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
IC, COLLECTOR CURRENT (mA)
VR, REVERSE VOLTAGE (VOLTS)
Figure 13. CurrentGain -- Bandwidth Product
Figure 14. Capacitance
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