Digchip : Database on electronics components
Electronics components database



Details, datasheet, quote on part number: D45VH10
 
 
Part numberD45VH10
CategoryDiscrete => Transistors => Bipolar => Power
DescriptionPower 15A 80V NPN , Package: TO-220, Pins=3
CompanyON Semiconductor
DatasheetDownload D45VH10 datasheet
Request For QuoteFind where to buy D45VH10
 


 
Specifications, Features, Applications

These complementary silicon power transistors are designed for high­speed switching applications, such as switching regulators and high frequency inverters. The devices are also well­suited for drivers for high power switching circuits.

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80 VOLTS 83 WATTS
· Fast Switching Key Parameters Specified @ 100_C· Low Collector­Emitter Saturation Voltage
VCE(sat) 1.0 V (Max) 8.0 A· Complementary Pairs Simplify Circuit Designs 90 ns (Max)

Rating Symbol VCEO VCEV VEB IC ICM PD Value 80 Unit Vdc Adc Collector­Emitter Voltage Collector­Emitter Voltage Emitter Base Voltage Collector Current Continuous Peak (1) Total Power Dissipation = 25_C Derate above 25_C Operating and Storage Junction Temperature Range 83 0.67 Watts W/_C _C TJ, Tstg to 150

Maximum Lead Temperature for Soldering Purposes: 1/8 from Case for 5 Seconds
NOTE: All polarities are shown for NPN transistors. For PNP transistors, reverse polarities.

Characteristic OFF CHARACTERISTICS Symbol Min Typ Max Unit Collector­Emitter Sustaining Voltage (2) (IC = 25 mAdc, = 0) VCEO(sus) ICEV 80 Vdc Collector­Emitter Cutoff Current (VCE = Rated VCEV, VBE(off) = 4.0 Vdc) (VCE = Rated VCEV, VBE(off) = 4.0 Vdc, = 100_C) Emitter Base Cutoff Current (VEB = 7.0 Vdc, = 0) µAdc 100 10 IEBO µAdc ON CHARACTERISTICS (2) DC Current Gain (IC = 2.0 Adc, VCE = 1.0 Vdc) (IC = 4.0 Adc, VCE = 1.0 Vdc) hFE 35 20 Collector­Emitter Saturation Voltage (IC = 8.0 Adc, = 0.4 Adc) (IC = 8.0 Adc, = 0.8 Adc) (IC = 15 Adc, = 3.0 Adc, = 100_C) VCE(sat) Vdc D44VH10 D45VH10 Base­Emitter Saturation Voltage (IC = 8.0 Adc, = 0.4 Adc) (IC = 8.0 Adc, = 0.8 Adc) (IC = 8.0 Adc, = 0.4 Adc, = 100_C) (IC = 8.0 Adc, = 0.8 Adc, = 100_C) VBE(sat) Vdc D44VH10 D45VH10 DYNAMIC CHARACTERISTICS Current Gain Bandwidth Product (IC = 0.1 Adc, VCE = 10 Vdc, = 20 MHz) Output Capacitance (VCB = 10 Vdc, = 0, ftest = 1.0 MHz) fT 50 MHz Cob 120 275 SWITCHING CHARACTERISTICS Delay Time Rise Time 50 ns Storage Time Fall Time (VCC = 20 Vdc, = 8.0 Adc, = 0.8 Adc) tf (2) Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2%.




Some Part number from the same manufacture ON Semiconductor
DA121T Silicon Switching Diode
DA121TT1 Silicon Switching Diode , Package: SC-75 (SC-90, SOT-416), Pins=3
DAN222 Dual Common Cathode Switch Diode , Package: SC-75 (SC-90, SOT-416), Pins=3
DAP202U Small Signal SC70 Switch Diode 70V Tape And Reel, Package: SC-70 (SOT-323), Pins=3
DAP222 Dual Common Anode Switch Diode , Package: SC-75 (SC-90, SOT-416), Pins=3
DAP222T1 Small Signal SC70 Switch Diode 70V Tape And Reel, Package: SC-70 (SOT-323), Pins=3
DF3A6.8FUT1 SC70 Zener Dual Com Anode, Package: SC-70 (SOT-323), Pins=3
DF6A6.8 Quad Array For Esd Protection
DF6A6.8FUT1 Quad Array For Esd Protection , Package: SC-88 (SOT-363), Pins=6
DL111
DL121
DL122
DL129
DL131
DL135
DL137
DL138
DL140
DL150
DL203
DLD601