|
|
Part: DTC114EE
Category:
Discrete
-> Transistors
Description: Bias Resistor Transistor
Company: ON Semiconductor
Datasheet: Download DTC114EE datasheet File size : 104 kB
Request For quote: Find where to buy DTC114EE
Datasheet text preview:
DTC114EET1 Series Bias Resistor Transistor
NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-75/SOT-416 package which is designed for low power surface mount applications.
http://onsemi.com
NPN SILICON BIAS RESISTOR TRANSISTORS
· · · ·
Simplifies Circuit Design Reduces Board Space Reduces Component Count The SC-75/SOT-416 package can be soldered using wave or reflow. The modified gull-winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. · Available in 8 mm, 7 inch/3000 Unit Tape & Reel
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Symbol VCBO VCEO IC Value 50 50 100 Unit Vdc Vdc mAdc
PIN 1 BASE (INPUT)
PIN 3 COLLECTOR (OUTPUT) R1 R2 PIN 2 EMITTER (GROUND)
3 2 1 SC-75/SOT-416 CASE 463 STYLE 1
MARKING DIAGRAM
xx M
xx = Specific Device Code (See Marking Table on page 2) M = Date Code
© Semiconductor Components Industries, LLC, 2003
1
March, 2003 - Rev. 5
Publication Order Number: DTC114EET1/D
DTC114EET1 Series
DEVICE MARKING AND RESISTOR VALUES
Device DTC114EET1 DTC124EET1 DTC144EET1 DTC114YET1 DTC114TET1 DTC143TET1 DTC123EET1 DTC143EET1 DTC143ZET1 DTC124XET1 DTC123JET1 DTC115EET1 DTC144WET1 Marking 8A 8B 8C 8D 94 8F 8H 8J 8K 8L 8M 8N 8P R1 (K) 10 22 47 10 10 4.7 2.2 4.7 4.7 22 2.2 100 47 R2 (K) 10 22 47 47 2.2 4.7 47 47 47 100 22 Shipping 3000/Tape & Reel
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation, FR-4 Board (Note 1) @ TA = 25°C Derate above 25°C Thermal Resistance, Junction-to-Ambient (Note 1) Total Device Dissipation, FR-4 Board (Note 2) @ TA = 25°C Derate above 25°C Thermal Resistance, Junction-to-Ambient (Note 2) Junction and Storage Temperature Range 1. FR-4 @ Minimum Pad 2. FR-4 @ 1.0 × 1.0 Inch Pad Symbol PD 200 1.6 R J A PD 300 2.4 R J A TJ, Tstg 400 -55 to +150 mW mW/°C °C/W °C 600 mW mW/°C °C/W Max Unit
http://onsemi.com
2
DTC114EET1 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB = 50 V, IE = 0) Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) DTC114EET1 DTC124EET1 DTC144EET1 DTC114YET1 DTC114TET1 DTC143TET1 DTC123EET1 DTC143EET1 DTC143ZET1 DTC124XET1 DTC123JET1 DTC115EET1 DTC144WET1 ICBO ICEO IEBO 50 50 100 500 0.5 0.2 0.1 0.2 0.9 1.9 2.3 1.5 0.18 0.13 0.2 0.05 0.13 nAdc nAdc mAdc
Collector-Base Breakdown Voltage (IC = 10 µA, IE = 0) Collector-Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0)
V(BR)CBO V(BR)CEO
Vdc Vdc
ON CHARACTERISTICS (Note 3)
DC Current Gain (VCE = 10 V, IC = 5.0 mA) DTC114EET1 DTC124EET1 DTC144EET1 DTC114YET1 DTC114TET1 DTC143TET1 DTC123EET1 DTC143EET1 DTC143ZET1 DTC124XET1 DTC123JET1 DTC115EET1 DTC144WET1 hFE 35 60 80 80 160 160 8.0 15 80 80 80 80 80 60 100 140 140 350 350 15 30 200 150 140 150 140 0.25 Vdc
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) (IC = 10 mA, IB = 5 mA) DTC123EET1 (IC = 10 mA, IB = 1 mA) DTC143TET1/DTC114TET1/ DTC143EET1/DTC143ZET1/DTC124XET1 Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k) DTC114EET1 DTC124EET1 DTC114YET1 DTC114TET1 DTC143TET1 DTC123EET1 DTC143EET1 DTC143ZET1 DTC124XET1 DTC123JET1 DTC144EET1 DTC115EET1 DTC144WET1
VCE(sat)
VOL VOH 4.9 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 -
Vdc
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 5.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 4.0 V, RL = 1.0 k)
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k) DTC143TET1 (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k) DTC143ZET1 DTC114TET1 3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
Vdc
http://onsemi.com
3
DTC114EET1 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Input Resistor DTC114EET1 DTC124EET1 DTC144EET1 DTC114YET1 DTC114TET1 DTC143TET1 DTC123EET1 DTC143EET1 DTC143ZET1 DTC124XET1 DTC123JET1 DTC115EET1 DTC144WET1 DTC114EET1/DTC124EET1/DTC144EET1/ DTC115EET1 DTC114YET1 DTC143TET1/DTC114TET1 DTC123EET1/DTC143EET1 DTC143ZET1 DTC124XET1 DTC123JET1 DTC144WET1 250 PD , POWER DISSIPATION (MILLIWATTS) 200 Symbol R1 Min 7.0 15.4 32.9 7.0 7.0 3.3 1.5 3.3 3.3 15.4 1.54 70 32.9 0.8 0.17 0.8 0.055 0.38 0.038 1.7 Typ 10 22 47 10 10 4.7 2.2 4.7 4.7 22 2.2 100 47 1.0 0.21 1.0 0.1 0.47 0.047 2.1 Max 13 28.6 61.1 13 13 6.1 2.9 6.1 6.1 28.6 2.86 130 61.1 1.2 0.25 1.2 0.185 0.56 0.056 2.6 Unit k
Resistor Ratio
R1/R2
150 100 50 0 -50
RJA = 600°C/W
0 50 100 TA, AMBIENT TEMPERATURE (°C)
150
Figure 1. Derating Curve
r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE 1.0
D = 0.5 0.2 0.1 0.05 0.02
0.1
0.01
0.01 SINGLE PULSE
0.001
0.00001
0.0001
0.001
0.01
0.1 t, TIME (s)
1.0
10
100
1000
Figure 2. Normalized Thermal Response
http://onsemi.com
4
DTC114EET1 Series
TYPICAL ELECTRICAL CHARACTERISTICS - DTC114EET1
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 TA = -25°C 25°C 0.1 75°C 1000 hFE , DC CURRENT GAIN (NORMALIZED) VCE = 10 V TA = 75°C 25°C -25°C 100
0.01
0.001
0
20 40 IC, COLLECTOR CURRENT (mA)
50
10
1
10 IC, COLLECTOR CURRENT (mA)
100
Figure 3. VCE(sat) versus IC
Figure 4. DC Current Gain
4 f = 1 MHz IE = 0 V TA = 25°C
100 75°C IC, COLLECTOR CURRENT (mA) 10 1 0.1
25°C TA = -25°C
Cob , CAPACITANCE (pF)
3
2
1
0.01 VO = 5 V 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 8 9 10
0
0
10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS)
50
0.001
Figure 5. Output Capacitance
Figure 6. Output Current versus Input Voltage
10 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = -25°C 25°C 75°C 1
0.1
0
10
20 30 IC, COLLECTOR CURRENT (mA)
40
50
Figure 7. Input Voltage versus Output Current
http://onsemi.com
5
Others parts begin by dt
|
|
|
