|
|
Part: DTC114T
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
-> Bias Resistor Transistors
Description: Bias Resistor Transistor , Package: TO-92 (TO-226), Pins=3
Company: ON Semiconductor
Datasheet: Download DTC114T datasheet File size : 104 kB
Request For quote: Find where to buy DTC114T
Datasheet text preview:
DTC114E Series
Preferred Devices
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a baseemitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the TO92 package which is designed for through hole applications.
http://onsemi.com
NPN SILICON BIAS RESISTOR TRANSISTOR
PIN 3 COLLECTOR (OUTPUT)
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Total Power Dissipation @ TA = 25°C (Note 1.) Derate above 25°C Symbol VCBO VCEO IC PD 350 2.81 mW mW/°C Value 50 50 100 Unit Vdc Vdc mAdc PIN 2 BASE (INPUT) R1 R2
PIN 1 EMITTER (GROUND)
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient (surface mounted) Operating and Storage Temperature Range Maximum Temperature for Soldering Purposes, Time in Solder Bath Symbol RJA TJ, Tstg TL 260 10 Value 357 55 to +150 Unit °C/W °C
1 2 3
°C Sec
CASE 29 TO92 (TO226) STYLE 1
DEVICE MARKING AND RESISTOR VALUES
Device DTC114E DTC124E DTC144E DTC114Y DTC114T DTC143T DTD113E DTC123E DTC143E DTC143Z Marking DTC114E DTC124E DTC144E DTC114Y DTC114T DTC143T DTD113E DTC123E DTC143E DTC143Z R1 (K) 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 R2 (K) 10 22 47 47 1.0 2.2 4.7 47 Shipping 5000/Box DTC1xxx YWW
MARKING DIAGRAM
DTC1 xxx Y WW
= Specific Device Code = (See Table) = Year = Work Week
1. Device mounted on a FR4 glass epoxy printed circuit board using the minimum recommended footprint.
Preferred devices are recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2001
1
November, 2001 Rev. 3
Publication Order Number: DTC114E/D
DTC114E Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
CollectorBase Cutoff Current (VCB = 50 V, IE = 0) CollectorEmitter Cutoff Current (VCE = 50 V, IB = 0) EmitterBase Cutoff Current (VEB = 6.0 V, IC = 0) DTC114E DTC124E DTC144E DTC114Y DTC114T DTC143T DTD113E DTC123E DTC143E DTC143Z ICBO ICEO IEBO 50 50 100 500 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 nAdc nAdc mAdc
CollectorBase Breakdown Voltage (IC = 10 µA, IE = 0) CollectorEmitter Breakdown Voltage (Note 2.) (IC = 2.0 mA, IB = 0)
V(BR)CBO V(BR)CEO
Vdc Vdc
ON CHARACTERISTICS (Note 2.)
DC Current Gain (VCE = 10 V, IC = 5.0 mA) DTC114E DTC124E DTC144E DTC114Y DTC114T DTC143T DTD113E DTC123E DTC143E DTC143Z hFE 35 60 80 80 160 160 3.0 8.0 15 80 60 100 140 140 350 350 5.0 15 30 200 0.25 Vdc
CollectorEmitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA) DTC144E/DTC114Y (IC = 10 mA, IB = 0.3 mA) DTD113E/DTC143E (IC = 10 mA, IB = 5 mA) DTC123E (IC = 10 mA, IB = 1 mA) DTC114T/DTC143T/ (IC = 10 mA, IB = 1 mA) DTC143Z/DTC124E Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k) DTC114E DTC124E DTC114Y DTC114T DTC143T DTD113E DTC123E DTC143E DTC143Z DTC144E
VCE(sat)
VOL 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2
Vdc
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k) 2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
http://onsemi.com
2
DTC114E Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k) DTC114E DTC124E DTC144E DTC114Y DTC123E DTC143E DTD113E DTC114T DTC143T DTC143Z DTC114E DTC124E DTC144E DTC114Y DTC114T DTC143T DTD113E DTC123E DTC143E DTC143Z DTC114E/DTC124E/DTC144E DTC114Y DTC114T/DTC143T DTD113E/DTC123E/DTC143E DTC143Z R1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 0.8 0.17 0.8 0.055 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 1.0 0.21 1.0 0.1 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 1.2 0.25 1.2 0.185 k Symbol VOH Min 4.9 Typ Max Unit Vdc
(VCC = 5.0 V, VB = 0.05 V, RL = 1.0 k) (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k)
Input Resistor
Resistor Ratio
R1/R2
http://onsemi.com
3
DTC114E Series
TYPICAL ELECTRICAL CHARACTERISTICS DTC114E
250 PD , POWER DISSIPATION (MILLIWATTS) 200 150 100 50 0 RJA = 625°C/W VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 TA = -25°C 25°C 75°C
0.1
0.01
-50
0 50 100 TA, AMBIENT TEMPERATURE (°C)
150
0.001
0
20 40 60 IC, COLLECTOR CURRENT (mA)
80
Figure 1. Derating Curve
Figure 2. VCE(sat) versus IC
1000 h FE, DC CURRENT GAIN (NORMALIZED) VCE = 10 V Cob , CAPACITANCE (pF) TA = 75°C 25°C -25°C 100
4 f = 1 MHz lE = 0 V TA = 25°C
3
2
1
10
1
10 IC, COLLECTOR CURRENT (mA)
100
0
0
10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS)
50
Figure 3. DC Current Gain
Figure 4. Output Capacitance
100 75°C IC , COLLECTOR CURRENT (mA) 10 1 0.1 0.01
25°C TA = -25°C
10 VO = 0.2 V Vin, INPUT VOLTAGE (VOLTS)
TA = -25°C 25°C 75°C
1
VO = 5 V 0 1 2 5 6 7 3 4 Vin, INPUT VOLTAGE (VOLTS) 8 9 10 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50
0.001
Figure 5. VCE(sat) versus IC
Figure 6. VCE(sat) versus IC
http://onsemi.com
4
DTC114E Series
TYPICAL ELECTRICAL CHARACTERISTICS DTC124E
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS 1 IC/IB = 10 TA = -25°C 25°C 75°C 1000 h FE, DC CURRENT GAIN (NORMALIZED)
VCE = 10 V TA = 75°C 25°C -25°C
0.1
100
0.01
-
0.001
0
20 40 60 IC, COLLECTOR CURRENT (mA)
80
10
1
10 IC, COLLECTOR CURRENT (mA)
100
Figure 7. VCE(sat) versus IC
Figure 8. DC Current Gain
4 f = 1 MHz lE = 0 V TA = 25°C
100 10 1 0.1 0.01
75°C
25°C TA = -25°C
Cob , CAPACITANCE (pF)
3
2
1
IC , COLLECTOR CURRENT (mA)
VO = 5 V 0 2 4 6 8 10
0
0
10
20
30
40
50
0.001
VR, REVERSE BIAS VOLTAGE (VOLTS)
Vin, INPUT VOLTAGE (VOLTS)
Figure 9. Output Capacitance
Figure 10. Output Current versus Input Voltage
100 VO = 0.2 V Vin , INPUT VOLTAGE (VOLTS) TA = -25°C 10 75°C 25°C
1
0.1
0
10
20
30
40
50
IC, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage versus Output Current
http://onsemi.com
5
Others parts begin by dt
|
|
|
