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Part: J110
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> JFETs (Junction-FETs)
Description: Small Signal TO92 JFET N Channel 25V, Package: TO-92 (TO-226), Pins=3
Company: ON Semiconductor
Datasheet: Download J110 datasheet File size : 232 kB
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Datasheet text preview:
J110 JFET - General Purpose
NChannel Depletion
NChannel Junction Field Effect Transistors, depletion mode (Type A) designed for general purpose audio amplifiers, analog switches and choppers.
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1 DRAIN
· · · · · · ·
NChannel for Higher Gain Drain and Source Interchangeable High AC Input Impedance High DC Input Resistance Low RDS(on) < 18 Fast Switching td(on) + tr = 8.0 ns (Typ) Low Noise en = 6.0 nV/Hz @ 10 Hz (Typ)
3 GATE
2 SOURCE
MAXIMUM RATINGS
Rating GateSource Voltage DrainGate Voltage Gate Current Total Device Dissipation @ TA = 25°C Derate above 25°C Operating Junction Temp Range Storage Temperature Range TJ Tstg Symbol VGS VDG IG PD 310 2.82 135 65 to +150 mW mW/°C °C °C Value 25 25 10 Unit Vdc Vdc mAdc
1 2 3
TO92 CASE 29 STYLE 5
MARKING DIAGRAMS
J110 YWW
Y WW
= Year = Work Week
ORDERING INFORMATION
Device J110 J110RLRA Package TO92 TO92 Shipping 5000 Units/Box 2000/Tape & Reel
Preferred devices are recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2001
1
September, 2001 Rev. 3
Publication Order Number: 2N5638/D
J110
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
STATIC CHARACTERISTICS
GateSource Breakdown Voltage Gate Reverse Current GateSource Cutoff Voltage Drain Source OnResistance ZeroGateVoltage Drain Current (Note 1.) (IG = 1.0 µAdc) (VGS = 15 Vdc, VDS = 0) (VGS = 15 Vdc, VDS = 0, TA = 100°C) (VDS = 5.0 Vdc, ID = 1.0 µAdc) (VDS = < 1.0 V, VGS = 0 V) (VDS = 15 Vdc) V(BR)GSS IGSS VGS(off) RDS(on) IDSS Cdg(on) + Csg(on) Cdg(off) Csg(off) 25 0.5 10 10 3.0 200 4.0 Vdc nAdc Vdc mAdc mAdc
DYNAMIC CHARACTERISTICS
DrainGate and SourceGate OnCapacitance (VDS = VGS = 0, f = 1.0 MHz) DrainGate OffCapacitance SourceGate OffCapacitance 1. Pulse Width = 300 µs, Duty Cycle = 3.0%. (VGS = 10 Vdc, f = 1.0 MHz) (VGS = 10 Vdc, f = 1.0 MHz) 85 pF
15 15
pF pF
Crss, FEEDBACK CAPACITANCE (pF)
100 Ciss, INPUT CAPACITANCE (pF)
100 80
80
60
60
VDS = 0 V 5V
40 10 V
40
VDS = 0 V
20 0 0
20 0 0
5V 10 V 4 8 12 16 20 VGS, GATESOURCE VOLTAGE (VOLTS)
4
8
12
16
20
VGS, GATESOURCE VOLTAGE (VOLTS)
Figure 1. Common Source Input Capacitance versus GateSource Voltage
16 RDS(on), DRAINSOURCE ONRESISTANCE (OHMS) 100 90 ID, DRAIN CURRENT (mA) 80 70 60 50 40 30 20 10 0 0 1 2 3 4 5 6 7 8 VGS(off), GATESOURCE CUTOFF VOLTAGE (VOLTS) 0 0 12 RDS(on): VDS 0.1 V RDS(on): VGS = 0 V 8
Figure 2. Common Source Reverse Feedback Capacitance versus GateSource Voltage
VGS = 0 V 0.25 V
0.5 V
0.75 V 1 V 1.25 V 2 4 6 8 10 12 14 16 18 20
4
VGS(off): VDS = 5 V VGS(off): ID = 1.0 mA
VDS, DRAINSOURCE VOLTAGE (VOLTS)
Figure 3. OnResistance versus GateSource Cutoff Voltage
Figure 4. Output Characteristic VGS(off) = 2 V
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2
J110
200 180 ID, DRAIN CURRENT (mA) 160 140 120 100 80 1.5 V 60 40 20 0 0 2 4 6 8 10 12 14 16 2 V 2.5 V 18 20 1 V VGS = 0 V 0.5 V ID, DRAIN CURRENT (mA) 300 270 240 210 180 150 120 90 60 30 0 0 2 4 6 8 10 12 14 16 18 20 VDS, DRAINSOURCE VOLTAGE (VOLTS) 2.5 V 3 V 1.5 V 2 V VGS = 0 V 0.5 V 1 V
VDS, DRAINSOURCE VOLTAGE (VOLTS)
Figure 5. Output Characteristic VGS(off) = 3 V
Figure 6. Output Characteristic VGS(off) = 4 V
400 360 ID, DRAIN CURRENT (mA) 320 280 240 200 160 120 80 40 0 0 2 4 6 8 10 12 14 16 18 20 VDS, DRAINSOURCE VOLTAGE (VOLTS) VGS = 0 V 0.5 V 1 V 1.5 V 2 V 2.5 V 3 V 3.5 V
Figure 7. Output Characteristic VGS(off) = 5 V
PACKAGE DIMENSIONS
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3
Others parts begin by j1
J1-1
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