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Part: J310ZL1
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> JFETs (Junction-FETs)
Description: Small Signal T092 JFET N Channel 25V Tape And Ammunition Box, Package: TO-92 (TO-226), Pins=3
Company: ON Semiconductor
Datasheet: Download J310ZL1 datasheet File size : 209 kB
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Datasheet text preview:
ON Semiconductort
JFET VHF/UHF Amplifiers
NChannel -- Depletion
J308 J309 J310
ON Semiconductor Preferred Devices
MAXIMUM RATINGS
Rating DrainSource Voltage GateSource Voltage Forward Gate Current Total Device Dissipation @ TA = 25°C Derate above 25°C Junction Temperature Range Storage Temperature Range Symbol VDS VGS IGF PD TJ Tstg Value 25 25 10 350 2.8 65 to +125 65 to +150 Unit Vdc Vdc mAdc mW mW/°C °C °C 1 DRAIN
1 2 3
CASE 2911, STYLE 5 TO92 (TO226AA)
3 GATE
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ
2 SOURCE Max Unit
OFF CHARACTERISTICS
GateSource Breakdown Voltage (IG = 1.0 µAdc, VDS = 0) Gate Reverse Current (VGS = 15 Vdc, VDS = 0, TA = 25°C) (VGS = 15 Vdc, VDS = 0, TA = +125°C) Gate Source Cutoff Voltage (VDS = 10 Vdc, ID = 1.0 nAdc) J308 J309 J310 V(BR)GSS IGSS -- -- VGS(off) 1.0 1.0 2.0 -- -- -- 6.5 4.0 6.5 -- -- 1.0 1.0 nAdc µAdc Vdc 25 -- -- Vdc
ON CHARACTERISTICS
ZeroGateVoltage Drain Current(1) (VDS = 10 Vdc, VGS = 0) IDSS J308 J309 J310 VGS(f) 12 12 24 -- -- -- -- -- 60 30 60 1.0 Vdc mAdc
GateSource Forward Voltage (VDS = 0, IG = 1.0 mAdc)
© Semiconductor Components Industries, LLC, 2001
1
March, 2001 Rev. 1
Publication Order Number: J308/D
J308 J309 J310
Characteristic Symbol Min Typ Max Unit
SMALLSIGNAL CHARACTERISTICS
CommonSource Input Conductance (VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz) Re(yis) J308 J309 J310 Re(yos) Gpg -- -- -- -- -- 0.7 0.7 0.5 0.25 16 -- -- -- -- -- mmhos dB mmhos
CommonSource Output Conductance (VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz) CommonGate Power Gain (VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz) 1. Pulse Test: Pulse Width v 300 µs, Duty Cycle v 3.0%.
SMALLSIGNAL CHARACTERISTICS (continued)
CommonSource Forward Transconductance (VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz) CommonGate Input Conductance (VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz) CommonSource Forward Transconductance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) J308 J309 J310 gos gfg J308 J309 J310 gog J308 J309 J310 Cg d Cg s -- -- -- -- -- 150 100 150 1.8 4.3 -- -- -- 2.5 5.0 pF pF -- -- -- 13000 13000 12000 -- -- -- µmhos Re(yfs) Re(yig) gfs 8000 10000 8000 -- -- -- -- -- 20000 20000 18000 250 µmhos µmhos -- -- 12 12 -- -- mmhos mmhos µmhos
CommonSource Output Conductance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) CommonGate Forward Transconductance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz)
CommonGate Output Conductance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz)
GateDrain Capacitance (VDS = 0, VGS = 10 Vdc, f = 1.0 MHz) GateSource Capacitance (VDS = 0, VGS = 10 Vdc, f = 1.0 MHz)
FUNCTIONAL CHARACTERISTICS
Noise Figure (VDS = 10 Vdc, ID = 10 mAdc, f = 450 MHz) Equivalent ShortCircuit Input Noise Voltage (VDS = 10 Vdc, ID = 10 mAdc, f = 100 Hz) NF en -- -- 1.5 10 -- -- dB
nV
Hz
http://onsemi.com
2
J308 J309 J310
50 SOURCE U310 C3 L1 C5 C7 1.0 k +VDD C1 = C2 = 0.8 10 pF, JFD #MVM010W. C3 = C4 = 8.35 pF Erie #539002D. C5 = C6 = 5000 pF Erie (2443000). C7 = 1000 pF, Allen Bradley #FA5C. RFC = 0.33 µH Miller #923030. L1 = One Turn #16 Cu, 1/4 I.D. (Air Core). L2P = One Turn #16 Cu, 1/4 I.D. (Air Core). L2S = One Turn #16 Cu, 1/4 I.D. (Air Core). RFC C1 C2 C6 C4 L2P L2S 50 LOAD
Figure 1. 450 MHz CommonGate Amplifier Test Circuit
60 I D , DRAIN CURRENT (mA) 50 40 30 20 10 -5.0
VDS = 10 V IDSS +25°C
TA = -55°C +25°C
60 50 40
IDSS, SATURATION DRAIN CURRENT (mA)
70
Yfs , FORWARD TRANSCONDUCTANCE (mmhos)
70
35 VDS = 10 V f = 1.0 MHz TA = -55°C
30 25 20 15 10
+25°C
+150°C +25°C -55°C
30 20
+150°C -55°C
+25°C
+150°C 10 0 0
5.0 0 5.0 4.0 3.0 2.0
+150°C
-1.0 -4.0 -3.0 -2.0 ID - VGS, GATE-SOURCE VOLTAGE (VOLTS) IDSS - VGS, GATE-SOURCE CUTOFF VOLTAGE (VOLTS)
1.0
0
VGS, GATE-SOURCE VOLTAGE (VOLTS)
Figure 2. Drain Current and Transfer Characteristics versus GateSource Voltage
Figure 3. Forward Transconductance versus GateSource Voltage
Yfs , FORWARD TRANSCONDUCTANCE (µmhos)
100 k Yfs 10 k Yfs
1.0 k Yos, OUTPUT ADMITTANCE (µ mhos)
10 RDS CAPACITANCE (pF) 7.0
120 96 72 Cgs R DS , ON RESISTANCE (OHMS)
100
1.0 k
Yos
VGS(off) = -2.3 V = VGS(off) = -5.7 V =
10
4.0
48 24 0 0
1.0 0 10 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0
Cgd
100 0.01
1.0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 ID, DRAIN CURRENT (mA)
1.0
VGS, GATE SOURCE VOLTAGE (VOLTS)
Figure 4. CommonSource Output Admittance and Forward Transconductance versus Drain Current http://onsemi.com
3
Figure 5. On Resistance and Junction Capacitance versus GateSource Voltage
Others parts begin by j3
J3-1
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