|
|
Part: LF351
Category:
Analog & Mixed-Signal Processing
-> Amplifiers
-> Operational Amplifiers
-> General Purpose
-> Single
Description: Quad Operational Amplifier, Internally Compensated, JFET Input
Company: ON Semiconductor
Datasheet: Download LF351 datasheet File size : 82 kB
Request For quote: Find where to buy LF351
Datasheet text preview:
ON Semiconductort
JFET Input Operational Amplifiers
These low cost JFET input operational amplifiers combine two stateoftheart analog technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for low input offset voltage. The JFET technology provides wide bandwidths and fast slew rates with low input bias currents, input offset currents, and supply currents. These devices are available in single, dual and quad operational amplifiers which are pincompatible with the industry standard MC1741, MC1458, and the MC3403/LM324 bipolar devices. · Input Offset Voltage of 5.0 mV Max (LF347B)
LF347, B LF351 LF353
FAMILY OF JFET OPERATIONAL AMPLIFIERS
N SUFFIX PLASTIC PACKAGE CASE 626
8 1
· · · · · · ·
Low Input Bias Current: 50 pA Low Input Noise Voltage: 16 nV/ Hz Wide Gain Bandwidth: 4.0 MHz High Slew Rate: 13V/µs Low Supply Current: 1.8 mA per Amplifier High Input Impedance: 1012 High Common Mode and Supply Voltage Rejection Ratios: 100 dB
8 1
D SUFFIX PLASTIC PACKAGE CASE 751 (SO8)
PIN CONNECTIONS
Offset Null 1 Invt Input 2 Noninvt Input 3 VEE 4 Output A 1 Inputs A 2 3 8 NC
+
7 VCC 6 Output 5 Offset Null 8 VCC 7 Output B 6 5 Inputs B
LF351 (Top View)
+
A B
MAXIMUM RATINGS
Rating Supply Voltage Differential Input Voltage Input Voltage Range (Note 1) Output Short Circuit Duration (Note 2) Power Dissipation at TA = +25°C Derate above TA =+25°C Operating Ambient Temperature Range Operating Junction Temperature Range Storage Temperature Range Symbol VCC VEE VID VIDR tSC PD 1/JA TA TJ Tstg Value +18 18 ±30 ±15 Continuous 900 10 0 to +70 115 65 to +150 mW mW/°C °C °C °C Unit V V V
14 1
+
LF353 (Top View)
VEE 4
N SUFFIX PLASTIC PACKAGE CASE 646
PIN CONNECTIONS
Out 1 1 Inputs 1 2 3 14 Out 4
+ + 2 3 1 4
+ + -
13 12
Inputs 4
VCC 4 Inputs 2 5 6
11 VEE 10 9 Inputs 3
NOTES: 1. Unless otherwise specified, the absolute maximum negative input voltage is limited to the negative power supply. 2. Any amplifier output can be shorted to ground indefinitely. However, if more than one amplifier output is shorted simultaneously, maximum junction temperature rating may be exceeded.
Out 2 7
8 Out 3
(Top View)
ORDERING INFORMATION
Device LF351D LF351N LF353D LF353N LF347BN LF347N Operating Function Temperature Range Single Single Dual Dual Quad Quad TA = 0° to +70°C Package SO8 Plastic DIP SO8 Plastic DIP Plastic DIP Plastic DIP
© Semiconductor Components Industries, LLC, 2002
1
March, 2002 Rev. 1
Publication Order Number: LF347/D
LF347, B LF351 LF353
ELECTRICAL CHARACTERISTICS (VCC = +15 VEE = 15 V, TA = 25°C, unless otherwise noted.)
LF347B Characteristic Input Offset Voltage (RS 10 k, VCM = 0) TA = +25°C 0°C TA +70°C Avg. Temperature Coefficient of Input Offset Voltage RS 10 k, 0°C TA +70°C Input Offset Current (VCM = 0, Note 3) TA = +25°C 0°C TA +70°C Input Bias Current (VCM = 0, Note 3) TA = +25°C 0°C TA +70°C Input Resistance Common Mode Input Voltage Range LargeSignal Voltage Gain (VO = ±10 V, RL = 2.0 k) TA = +25°C 0°C TA +70°C Output Voltage Swing (RL = 10 k) Common Mode Rejection (RS 10 k) Supply Voltage Rejection (RS 10 k) Supply Current LF347 LF351 LF353 Short Circuit Current Slew Rate (AV = +1) GainBandwidth Product Equivalent Input Noise Voltage (RS = 100 , f = 1000 Hz) Equivalent Input Noise Current (f = 1000 Hz) Channel Separation (LF347, LF353) 1.0 Hz f 20 kHz (Input Referred) Symbol VIO VIO/T IIO IIB ri VICR AVOL 50 25 VO CMR PSRR ID ISC SR BWp en in 7.2 25 13 4.0 24 0.01 120 11 7.2 1.8 3.6 25 13 4.0 24 0.01 120 11 3.4 6.5 mA V/µs MHz nV/ Hz pA/ Hz dB ±12 80 80 100 ±14 100 100 25 15 ±12 70 70 100 ±14 100 100 V dB dB mA ±11 50 1012 +15 12 200 8.0 ±11 50 1012 +15 12 200 8.0 pA nA V V/mV 25 100 4.0 25 100 4.0 pA nA 10 10 1.0 5.0 8.0 5.0 10 13 µV/°C Min Typ Max LF347, LF351, LF353 Min Typ Max Unit mV
For Typical Characteristic Performance Curves, refer to MC34001, 34002, 34004 data sheet. NOTE: 3. Input bias currents of JFET input op amps approximately double for every 10°C rise in junction temperature. To maintain junction temperatures as close to ambient as is possible, pulse techniques are utilized during test.
http://onsemi.com
2
LF347, B LF351 LF353
OUTLINE DIMENSIONS
N SUFFIX PLASTIC PACKAGE CASE 62605 ISSUE K
8 5
B
1 4
F
NOTE 2
NOTES: 1. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL. 2. PACKAGE CONTOUR OPTIONAL (ROUND OR SQUARE CORNERS). 3. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. DIM A B C D F G H J K L M N MILLIMETERS MIN MAX 9.40 10.16 6.10 6.60 3.94 4.45 0.38 0.51 1.02 1.78 2.54 BSC 0.76 1.27 0.20 0.30 2.92 3.43 7.62 BSC --10_ 0.76 1.01 INCHES MIN MAX 0.370 0.400 0.240 0.260 0.155 0.175 0.015 0.020 0.040 0.070 0.100 BSC 0.030 0.050 0.008 0.012 0.115 0.135 0.300 BSC --10_ 0.030 0.040
A L
C T
SEATING PLANE
J N D K
M
M TA
M
H
G 0.13 (0.005) B
M
D SUFFIX PLASTIC PACKAGE CASE 75105 (SO8) ISSUE R
NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. DIMENSIONS ARE IN MILLIMETERS. 3. DIMENSION D AND E DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE. 5. DIMENSION B DOES NOT INCLUDE MOLD PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS OF THE B DIMENSION AT MAXIMUM MATERIAL CONDITION. DIM A A1 B C D E e H h L q MILLIMETERS MIN MAX 1.35 1.75 0.10 0.25 0.35 0.49 0.18 0.25 4.80 5.00 3.80 4.00 1.27 BSC 5.80 6.20 0.25 0.50 0.40 1.25 0_ 7_
A
8
D
5
C
E
H
1 4
0.25
M
B
M
h B C e A
SEATING PLANE
X 45 _
q
0.10 A1 0.25 B
M
L
CB
S
A
S
http://onsemi.com
3
Others parts begin by lf
LF-1 LF-2 LF-3 LF-4 LF-5 LF-6 LF-7
|
|
|
