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Part: MAC210A10
Category:
Discrete
-> Thyristors
-> Triacs
Description: Triacs , Package: TO-220, Pins=3
Company: ON Semiconductor
Datasheet: Download MAC210A10 datasheet File size : 886 kB
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Datasheet text preview:
MAC210A8, MAC210A10 Triacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever fullwave silicon gate controlled solidstate devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied main terminal voltage with positive or negative gate triggering. · Blocking Voltage to 600 Volts · All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability · Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability · Gate Triggering Guaranteed in Four Modes (Quadrants) · Device Marking: Logo, Device Type, e.g., MAC210A8, Date Code
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Peak Repetitive OffState Voltage(1) (TJ = 40 to +125°C, Sine Wave 50 to 60 Hz, Gate Open) MAC210A8 MAC210A10 OnState RMS Current (TC = +70°C) Full Cycle Sine Wave 50 to 60 Hz Peak NonRepetitive Surge Current (One Full Cycle, Sine Wave 60 Hz, TC = +25°C) Preceded and followed by rated current Circuit Fusing Considerations (t = 8.3 ms) Peak Gate Power (TC = +70°C, Pulse Width = 10 µs) Average Gate Power (TC = +70°C, t = 8.3 ms) Peak Gate Current (TC = +70°C, Pulse Width = 10 µs) Operating Junction Temperature Range Storage Temperature Range Symbol VDRM, VRRM 600 800 IT(RMS) 10 Amps 1 2 3 Value Unit Volts
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TRIACS 10 AMPERES RMS 600 thru 800 VOLTS
MT2 G MT1
4
ITSM
100
Amps
TO220AB CASE 221A STYLE 4
PIN ASSIGNMENT
I2t PGM PG(AV) IGM TJ Tstg 40 20 0.35 2.0 40 to +125 40 to +150 A2s Watts Watt Amps °C °C 1 2 3 4 Main Terminal 1 Main Terminal 2 Gate Main Terminal 2
ORDERING INFORMATION
Device MAC210A8 MAC210A10 Package TO220AB TO220AB Shipping 500/Box 500/Box
(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
© Semiconductor Components Industries, LLC, 1999
1
March, 2000 Rev. 1
Publication Order Number: MAC210A8/D
MAC210A8, MAC210A10
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance -- Junction to Case Thermal Resistance -- Junction to Ambient Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds Symbol RJC RJA TL Value 2.0 62.5 260 Unit °C/W °C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM; Gate Open) TJ = 25°C TJ = +125°C IDRM, IRRM -- -- -- -- 10 2.0 µA mA
ON CHARACTERISTICS
Peak On-State Voltage (ITM = A Peak; Pulse Width = 1 to 2 ms, Duty Cycle
"14
p 2%)
VTM IGT
--
1.2
1.65
Volts mA
Gate Trigger Current (Continuous dc) (Main Terminal Voltage = 12 Vdc, RL = 100 Ohms) MT2(+), G(+) MT2(+), G() MT2(), G() MT2(), G(+) Gate Trigger Voltage (Continuous dc) (Main Terminal Voltage = 12 Vdc, RL = 100 Ohms) MT2(+), G(+) MT2(+), G() MT2(), G() MT2(), G(+) Gate NonTrigger Voltage (Continuous dc) (Main Terminal Voltage = 12 V, RL = 100 , TJ = +125°C) All Four Quadrants Holding Current (Main Terminal Voltage = 12 Vdc, Gate Open, Initiating Current = mA, TC = +25°C)
-- -- -- -- VGT -- -- -- -- VGD 0.2
12 12 20 35
50 50 50 75 Volts
0.9 0.9 1.1 1.4 --
2.0 2.0 2.0 2.5 -- Volts
IH
--
6.0
50
mA
"200
Turn-On Time (Rated VDRM, ITM = 14 A) (IGT = 120 mA, Rise Time = 0.1 µs, Pulse Width = 2 µs)
tgt
--
1.5
--
µs
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Commutation Voltage (VD = Rated VDRM, ITM = 14 A, Commutating di/dt = 5.0 A/ms, Gate Unenergized, TC = 70°C) Critical Rate of Rise of Off-State Voltage (VD = Rated VDRM, Exponential Voltage Rise, Gate Open, TC = +70°C) dv/dt(c) -- 5.0 -- V/µs
dv/dt
--
100
--
V/µs
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2
MAC210A8, MAC210A10
Voltage Current Characteristic of Triacs (Bidirectional Device)
+ Current Quadrant 1 MainTerminal 2 +
Symbol
VDRM IDRM VRRM IRRM VTM IH
Parameter
Peak Repetitive Forward Off State Voltage Peak Forward Blocking Current Peak Repetitive Reverse Off State Voltage Peak Reverse Blocking Current Maximum On State Voltage Holding Current IH Quadrant 3 VTM MainTerminal 2 IRRM at VRRM on state
VTM IH
off state
+ Voltage IDRM at VDRM
Quadrant Definitions for a Triac
MT2 POSITIVE (Positive Half Cycle) +
(+) MT2
(+) MT2
Quadrant II
() IGT GATE MT1 REF
(+) IGT GATE MT1 REF
Quadrant I
IGT () MT2 () MT2
+ IGT
Quadrant III
() IGT GATE MT1 REF
(+) IGT GATE MT1 REF
Quadrant IV
MT2 NEGATIVE (Negative Half Cycle) All polarities are referenced to MT1. With inphase signals (using standard AC lines) quadrants I and III are used.
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3
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