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Part: MAC210A8FP
Category:
Discrete
-> Thyristors
-> Triacs
Description: Triacs
Company: ON Semiconductor
Datasheet: Download MAC210A8FP datasheet File size : 886 kB
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MAC210A8FP MAC210A10FP , Triacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied main terminal voltage with positive or negative gate triggering. · Blocking Voltage to 800 Volts · All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability · Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability · Gate Triggering Guaranteed in Four Modes · Indicates UL Registered -- File #E69369 · Device Marking: Logo, Device Type, e.g., MAC210A8FP, Date Code
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Peak Repetitive OffState Voltage(1) (TJ = 40 to +125°C, Sine Wave, 50 to 60 Hz, Gate Open) MAC210A8FP MAC210A10FP On-State RMS Current (TC = +70°C)(2) Full Cycle Sine Wave 50 to 60 Hz Peak Nonrepetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TC = +70°C) Preceded and followed by rated current Circuit Fusing Consideration (t = 8.3 ms) Peak Gate Power (TC = +70°C, Pulse Width = 10 µs) Average Gate Power (TC = +70°C, t = 8.3 ms) Peak Gate Current (TC = +70°C, Pulse Width = 10 µsec) RMS Isolation Voltage (TA = 25°C, Relative Humidity 20%) ( ) Symbol VDRM, VRRM 600 800 IT(RMS) ITSM 10 100 Amps Amps 1 2 3 Value Unit Volts
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ISOLATED TRIAC ( 10 AMPERES RMS 600 thru 800 VOLTS
)
MT2 G
MT1
I2t PGM PG(AV) IGM V(ISO) TJ Tstg
40 20 0.35 2.0 1500 40 to +125 40 to +150
A2s Watts
ISOLATED TO220 Full Pack CASE 221C STYLE 3
PIN ASSIGNMENT
Watt Amps Volts °C °C 1 2 3 Main Terminal 1 Main Terminal 2 Gate
p
ORDERING INFORMATION
Device MAC210A8FP Package ISOLATED TO220FP Shipping 500/Box 500/Box
Operating Junction Temperature Range Storage Temperature Range
MAC210A10FP ISOLATED TO220FP
(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. (2) The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic body.
© Semiconductor Components Industries, LLC, 1999
1
February, 2000 Rev. 1
Publication Order Number: MAC210A8FP/D
MAC210A8FP, MAC210A10FP
THERMAL CHARACTERISTICS
Characteristic T h e r m a l Resistance, Junction to Case T h e r m a l Resistance, Case to Sink T h e r m a l Resistance, Junction to Ambient Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds Symbol RJC RCS RJA TL Max 2.2 2.2 (typ) 60 260 Unit °C/W °C/W °C/W °C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM; Gate Open) TJ = 25°C TJ = +125°C IDRM, IRRM -- -- -- -- 10 2.0 µA mA
ON CHARACTERISTICS
Peak On-State Voltage (ITM = A Peak; Pulse Width = 1 to 2 ms, Duty Cycle
"14
p 2%)
VTM IGT
--
1.2
1.65
Volts mA
Gate Trigger Current (Continuous dc) (Main Terminal Voltage = 12 Vdc, RL = 100 Ohms) MT2(+), G(+) MT2(+), G() MT2(), G() MT2(), G(+) Gate Trigger Voltage (Continuous dc) (Main Terminal Voltage = 12 Vdc, RL = 100 Ohms) MT2(+), G(+) MT2(+), G() MT2(), G() MT2(), G(+) Gate NonTrigger Voltage (Continuous dc) (Main Terminal Voltage = 12 V, RL = 100 , TJ = +125°C) All Four Quadrants Holding Current (Main Terminal Voltage = 12 Vdc, Gate Open, Initiating Current = mA)
-- -- -- -- VGT -- -- -- -- VGD 0.2 IH --
12 12 20 35
50 50 50 75 Volts
0.9 0.9 1.1 1.4
2.0 2.0 2.0 2.5 Volts
-- 6.0
-- 50 mA
"200
Turn-On Time (Rated VDRM, ITM = 14 A, IGT = 120 mA, Rise Time = 0.1 µs, Pulse Width = 2 µs)
tgt
--
1.5
--
µs
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Commutation Voltage (VD = Rated VDRM, ITM = 14 A, Commutating di/dt = 5.0 A/ms, Gate Unenergized, TC = +70°C) Critical Rate of Rise of OffState Voltage (VD = Rated VDRM, Exponential Voltage Rise, Gate Open, TC = +70°C) dv/dt(c) -- 5.0 -- V/µs
dv/dt
--
100
--
V/µs
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2
MAC210A8FP, MAC210A10FP
Voltage Current Characteristic of Triacs (Bidirectional Device)
+ Current Quadrant 1 MainTerminal 2 +
Symbol
VDRM IDRM VRRM IRRM VTM IH
Parameter
Peak Repetitive Forward Off State Voltage Peak Forward Blocking Current Peak Repetitive Reverse Off State Voltage Peak Reverse Blocking Current Maximum On State Voltage Holding Current IH Quadrant 3 VTM MainTerminal 2 IRRM at VRRM on state
VTM IH
off state
+ Voltage IDRM at VDRM
Quadrant Definitions for a Triac
MT2 POSITIVE (Positive Half Cycle) +
(+) MT2
(+) MT2
Quadrant II
() IGT GATE MT1 REF
(+) IGT GATE MT1 REF
Quadrant I
IGT () MT2 () MT2
+ IGT
Quadrant III
() IGT GATE MT1 REF
(+) IGT GATE MT1 REF
Quadrant IV
MT2 NEGATIVE (Negative Half Cycle) All polarities are referenced to MT1. With inphase signals (using standard AC lines) quadrants I and III are used.
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3
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