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Part: MBR0530T1
Category:
Discrete
-> Diodes & Rectifiers
Description: 0.5A 30V Schottky Rectifier , Package: SOD-123, Pins=2
Company: ON Semiconductor
Datasheet: Download MBR0530T1 datasheet File size : 2304 kB
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Datasheet text preview:
MBR0530T1, MBR0530T3
Preferred Devices
Surface Mount Schottky Power Rectifier
Plastic SOD123 Package
. . . using the Schottky Barrier principle with a large area metaltosilicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. This package also provides an easy to work with alternative to leadless 34 package style. These stateoftheart devices have the following features:
http://onsemi.com
· · · · ·
Guardring for Stress Protection Low Forward Voltage 125°C Operating Junction Temperature Epoxy Meets UL94, VO at 1/8 Package Designed for Optimal Automated Board Assembly
SCHOTTKY BARRIER RECTIFIER 0.5 AMPERES 30 VOLTS
Mechanical Characteristics
· Reel Options: MBR0530T1 = 3,000 per 7 reel/8 mm tape · · · · · ·
Reel Options: MBR0530T3 = 10,000 per 13 reel/8 mm tape Device Marking: B3 Polarity Designator: Cathode Band Weight: 11.7 mg (approximately) Case: Epoxy, Molded Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
SOD123 CASE 425 STYLE 1
MARKING DIAGRAM
B3 B3 = Device Code
MAXIMUM RATINGS
Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR, TL = 100°C) NonRepetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Storage Temperature Range Operating Junction Temperature Voltage Rate of Change (Rated VR) Symbol VRRM VRWM VR IF(AV) IFSM Value 30 Unit V
ORDERING INFORMATION
0.5 5.5 A A Device MBR0530T1 MBR0530T3 Package SOD123 SOD123 Shipping 3000/Tape & Reel 10,000/Tape & Reel
Tstg TJ dv/dt
65 to +125 65 to +125 1000
°C °C V/ms
Preferred devices are recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2000
1
October, 2000 Rev. 2
Publication Order Number: MBR0530T1/D
MBR0530T1, MBR0530T3
THERMAL CHARACTERISTICS
Rating Thermal Resistance -- Junction to Ambient (Note 1.) Thermal Resistance -- Junction to Lead Symbol R J A R J L Value 206 150 Unit °C/W °C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 2.) (iF = 0.1 Amps, TJ = 25°C) (iF = 0.5 Amps, TJ = 25°C) Maximum Instantaneous Reverse Current (Note 2.) (Rated dc Voltage, TC = 25°C) (VR = 15 V, TC = 25°C) 1. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board. 2. Pulse Test: Pulse Width = 300 µs, Duty Cycle 2%. vF 0.375 0.43 IR 130 20 µA Volts
iF, INSTANTANEOUS FORWARD CURRENT (AMPS)
104 I R, REVERSE CURRENT ( µ A) 1 TJ = 125°C
1000
TJ = 125°C 0.1
75°C
25°C
-40°C
100
75°C
10 25°C 0 5 10 15 20 25 30 35 40
1 0.01 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55
vF, INSTANTANEOUS VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
Figure 2. Typical Reverse Current
180 160 C, CAPACITANCE (pF) 140 120 100 80 60 40 20 0 5 10 15 20 25 30 TYPICAL CAPACITANCE AT 0 V = 170 pF
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Capacitance
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2
MBR0530T1, MBR0530T3
P F(AV), AVERAGE POWER DISSIPATION (WATT) 1 AVERAGE FORWARD CURRENT (AMP) 0.875 0.75 0.625 0.5 0.375 0.25 0.125 0 60 SQUARE WAVE = =5 = 10 Ipk/Iav = 20 67 74 81 88 95 102 109 116 123 130 DC 0.35 0.315 0.28 0.245 0.21 0.175 0.14 0.105 0.07 0.035 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Ipk/Iav = 20 = 10 =5 TJ = 125°C = SQUARE WAVE
DC
LEAD TEMPERATURE (°C)
IF(AV), AVERAGE FORWARD CURRENT (AMP)
Figure 4. Current Derating (Lead)
Figure 5. Power Dissipation
RECOMMENDED FOOTPRINT FOR SOD123
0.91 0.036
2.36 0.093 4.19 0.165
SOD123
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1.22 0.048
mm inches
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