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Part: MBR0540T1
Category:
Discrete
-> Diodes & Rectifiers
Description: 0.5A 40V Schottky Rectifier , Package: SOD-123, Pins=2
Company: ON Semiconductor
Datasheet: Download MBR0540T1 datasheet File size : 2304 kB
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Datasheet text preview:
MBR0540T1, MBR0540T3 Surface Mount Schottky Power Rectifier
SOD123 Power Surface Mount Package
The Schottky Power Rectifier employs the Schottky Barrier principle with a barrier metal that produces optimal forward voltage dropreverse current tradeoff. Ideally suited for low voltage, high frequency rectification, or as a free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. This package provides an alternative to the leadless 34 MELF style package. These stateoftheart devices have the following features:
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· · · · · · · · · · ·
Guardring for Stress Protection Very Low Forward Voltage Epoxy Meets UL94, VO at 1/8 Package Designed for Optimal Automated Board Assembly
SCHOTTKY BARRIER RECTIFIER 0.5 AMPERES 40 VOLTS
Mechanical Characteristics:
Reel Options: 3,000 per 7 inch reel/8 mm tape Reel Options: 10,000 per 13 inch reel/8 mm tape Device Marking: B4 Polarity Designator: Cathode Band Weight: 11.7 mg (approximately) Case: Epoxy Molded Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable · Lead and Mounting Surface Temperature for Soldering Purposes: 260°C max. for 10 Seconds
MAXIMUM RATINGS
Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (At Rated VR, TC = 115°C) Peak Repetitive Forward Current (At Rated VR, Square Wave, 20 kHz, TC = 115°C) NonRepetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Storage/Operating Case Temperature Range Operating Junction Temperature Voltage Rate of Change (Rated VR, TJ = 25°C) Symbol VRRM VRWM VR IO IFRM Value 40 Unit V
SOD123 CASE 425 STYLE 1
MARKING DIAGRAM
B4 B4 = Device Code
ORDERING INFORMATION
Device 0.5 1.0 A MBR0540T1 A MBR0540T3 SOD123 SOD123 3000/Tape & Reel 10,000/Tape & Reel Package Shipping
IFSM
5.5
A
Tstg, TC TJ dv/dt
55 to +150 55 to +150 1000
°C °C V/ms
© Semiconductor Components Industries, LLC, 2000
1
October, 2000 Rev. 4
Publication Order Number: MBR0540T1/D
MBR0540T1, MBR0540T3
THERMAL CHARACTERISTICS
Rating Thermal Resistance JunctiontoLead (Note 1.) Thermal Resistance JunctiontoAmbient (Note 2.) Symbol Rt j l Rt j a Value 118 206 Unit °C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 3.) (iF = 0.5 A) (iF = 1 A) Maximum Instantaneous Reverse Current (Note 3.) (VR = 40 V) (VR = 20 V) 1. Mounted with minimum recommended pad size, PC Board FR4. 2. 1 inch square pad size (1 X 0.5 inch for each lead) on FR4 board. 3. Pulse Test: Pulse Width 250 µs, Duty Cycle 2.0%. IR vF TJ = 25°C 0.51 0.62 TJ = 25°C 20 10 TJ = 100°C 0.46 0.61 TJ = 100°C 13,000 5,000 mA V
i F, INSTANTANEOUS FORWARD CURRENT (AMPS)
IF, INSTANTANEOUS FORWARD CURRENT (AMPS)
10
100
10
25°C
1.0 TJ = 125°C TJ = -40°C TJ = 25°C TJ = 100°C 0.1 0.2 0.4 0.6 0.8 1.0 1.2
1.0 TJ = 125°C TJ = 100°C 0.1 TJ = 25°C 0.2 0.4 0.6 0.8 1.0 1.2
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
I R, MAXIMUM REVERSE CURRENT (AMPS)
100E-3 I R, REVERSE CURRENT (AMPS) 10E-3 TJ = 125°C
100E-3 10E-3 1.0E-3 TJ = 125°C
1.0E-3
TJ = 100°C
100E-6 10E-6
TJ = 100°C
100E-6 10E-6 1.0E-6
TJ = 25°C
1.0E-6
TJ = 25°C 0 10 20 30
100E-9
40
100E-9
0
10
20
30
40
VR, REVERSE VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Reverse Current
Figure 4. Maximum Reverse Current
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2
MBR0540T1, MBR0540T3
I O , AVERAGE FORWARD CURRENT (AMPS) dc SQUARE WAVE Ipk/Io = p Ipk/Io = 5 Ipk/Io = 10 Ipk/Io = 20 FREQ = 20 kHz PFO , AVERAGE POWER DISSIPATION (WATTS) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 20 40 60 80 100 120 140 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Ipk/Io = 10 Ipk/Io = 20 SQUARE WAVE Ipk/Io = p Ipk/Io = 5 dc
TL, LEAD TEMPERATURE (°C)
IO, AVERAGE FORWARD CURRENT (AMPS)
Figure 5. Current Derating
Figure 6. Forward Power Dissipation
TJ , DERATED OPERATING TEMPERATURE ( °C)
100 TJ = 25°C C, CAPACITANCE (pF)
126 124 122 120 118 116 114 112 110 0 5.0 10 15 20 25 149°C/W 180°C/W 206°C/W 228°C/W 30 35 40 Rtja = 118°C/W
10
0
5.0
10
15
20
25
30
35
40
VR, REVERSE VOLTAGE (VOLTS)
VR, DC REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
Figure 8. Typical Operating Temperature Derating*
* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any reverse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating TJ = TJmax r(t)(Pf + Pr) where TJ may be calculated from the equation: r(t) = thermal impedance under given conditions, Pf = forward power dissipation, and Pr = reverse power dissipation This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJmax r(t)Pr, where r(t) = Rthja. For other power applications further calculations must be performed.
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3
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