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Part: MBR2545CT
Category:
Discrete
-> Diodes & Rectifiers
Description: 30A 45V Schottky Rectifier , Package: TO-220, Pins=3
Company: ON Semiconductor
Datasheet: Download MBR2545CT datasheet File size : 140 kB
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Datasheet text preview:
MBR2535CT, MBR2545CT
MBR2545CT is a Preferred Device
SWITCHMODETM Power Rectifiers
. . . using the Schottky Barrier principle with a platinum barrier metal. These stateoftheart devices have the following features:
· Guardring for Stress Protection · Low Forward Voltage · 150°C Operating Junction Temperature
Mechanical Characteristics:
http://onsemi.com
· Case: Epoxy, Molded · Weight: 1.9 grams (approximately) · Finish: All External Surfaces Corrosion Resistant and Terminal · Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds · Shipped 50 units per plastic tube · Marking: B2535, B2545
MAXIMUM RATINGS
Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage MBR2535CT MBR2545CT Average Rectified Forward Current (Rated VR, TC = 130°C) Peak Repetitive Forward Current, per Diode Leg (Rated VR, Square Wave, 20 kHz, TC = 130°C) NonRepetitive Peak Surge Current per Diode Leg (Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz) Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz) Storage Temperature Range Operating Junction Temperature Voltage Rate of Change (Rated VR) Symbol VRRM VRWM VR IF(AV) IFRM Value Unit V 35 45 30 30 A A
SCHOTTKY BARRIER RECTIFIERS 25 AMPERES 35 and 45 VOLTS
1 2, 4 3
Leads are Readily Solderable
4
1
2
3
TO220AB CASE 221A PLASTIC
IFSM
150
A
MARKING DIAGRAM
IRRM Tstg TJ dv/dt
1.0 65 to +175 65 to +150 1000
A °C °C V/ms YY WW B25x5 AKA
YY WW B25x5 x AKA
= Year = Work Week = Device Code = 3 or 4 = Diode Polarity
ORDERING INFORMATION
Device MBR2535CT MBR2545CT Package TO220 TO220 Shipping 50 Units/Rail 50 Units/Rail
Preferred devices are recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2001
1
May, 2001 Rev. 3
Publication Order Number: MBR2535CT/D
MBR2535CT, MBR2545CT
THERMAL CHARACTERISTICS (Per Diode Leg)
Characteristic Maximum Thermal Resistance, Junction to Case Symbol R J C MBR2535CT 1.5 MBR2545CT 1.5 Unit °C/W
ELECTRICAL CHARACTERISTICS (Per Diode Leg)
Maximum Instantaneous Forward Voltage (Note 1.) (iF = 30 Amps, TC = 125°C) (iF = 30 Amps, TC = 25°C) Maximum Instantaneous Reverse Current (Note 1.) (Rated dc Voltage, TC = 125°C) (Rated dc Voltage, TC = 25°C) 1. Pulse Test: Pulse Width = 300 µs, Duty Cycle 2.0%. vF 0.73 0.82 iR 40 0.2 40 0.2 0.73 0.82 mA Volts
i F, INSTANTANEOUS FORWARD CURRENT (AMPS)
100 70 50 30 20 10 7.0 5.0 3.0 2.0 1.0 0 0.2 0.4 0.6 0.8 1.0 TJ = 125°C 100°C 25°C
200 100 40 20 10 4.0 2.0 1.0 0.4 0.2 0.1 0.04 0.02 0.01 0.004 0.002 TJ = 150°C 125°C 100°C 75°C IR , REVERSE CURRENT (mA)
25°C
0
10
20
30
40
50
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
Figure 2. Typical Reverse Current
http://onsemi.com
2
MBR2535CT, MBR2545CT
IF(AV) , AVERAGE FORWARD CURRENT (AMPS) I F(AV) , AVERAGE FORWARD CURRENT (AMPS) 32 28 24 20 16 12 8.0 4.0 0 110 120 130 140 150 RATED VOLTAGE APPLIED RqJC = 1.5°C/W SQUARE WAVE dc 32 28 24 20 16 12 8.0 4.0 0 0 SQUARE WAVE 20 40 60 80 100 120 140 160 SQUARE WAVE dc dc RATED VR APPLIED RqJA = 16°C/W (With TO-220 Heat Sink) RqJA = 60°C/W (No Heat Sink)
TC, CASE TEMPERATURE (°C)
TA, AMBIENT TEMPERATURE (°C)
Figure 3. Current Derating, Case
Figure 4. Current Derating, Ambient
PF(AV) , AVERAGE POWER DISSIPATION (WATTS)
32 28 24 20 16 12 8.0 4.0 0 0 4.0
I (RESISTIVE LOAD) PK + p I
SQUARE WAVE
AV
I (CAPACITATIVE LOAD) PK + 5.0 I
dc
AV
10 20 TJ = 125°C
8.0
12
16
20
24
28
32
36
40
IF, AVERAGE FORWARD CURRENT (AMPS)
Figure 5. Forward Power Dissipation
http://onsemi.com
3
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