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Part: MBRB2515LT4
Category:
Discrete
-> Diodes & Rectifiers
Description: 25A 15V Schottky Rectifier , Package: D2PAK, Pins=3
Company: ON Semiconductor
Datasheet: Download MBRB2515LT4 datasheet File size : 68 kB
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Datasheet text preview:
MBRB2515L
Preferred Device
SWITCHMODETM Power Rectifier OR'ing Function Diode
D2PAK Surface Mount Power Package
The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power supplies, free wheeling diodes, and polarity protection diodes. These state-of-the-art devices have the following features:
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· · · · · ·
Guardring for Stress Protection Low Forward Voltage 100°C Operating Junction Temperature Epoxy Meets UL94, VO at 1/8 Short Heat Sink Tab Manufactured -- Not Sheared! Similar in Size to the Industry Standard TO-220 Package
SCHOTTKY BARRIER RECTIFIER 25 AMPERES 15 VOLTS
1 4 3
Mechanical Characteristics
· Case: Epoxy, Molded, Epoxy Meets UL94, VO · Weight: 1.7 grams (approximately) · Finish: All External Surfaces Corrosion Resistant and Terminal · · · · · ·
Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Shipped 50 units per plastic tube Available in 24 mm Tape and Reel, 800 units per 13 reel by adding a "T4" suffix to the part number Marking: B2515L Device Meets MSL1 Requirements ESD Ratings: Machine Model, C (>400 V) Human Body Model, 3B (>8000 V)
Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR, TC = 90°C) Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz, TC = 100°C) Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Storage Temperature Range Operating Junction Temperature Voltage Rate of Change (Rated VR) Symbol VRRM VRWM VR IF(AV) IFRM Value 15 Unit V
4 1 3 D2PAK CASE 418B STYLE 3
MARKING DIAGRAM
B2515L
MAXIMUM RATINGS
B2515L = Device Code
25 30
A A
ORDERING INFORMATION
Device MBRB2515L Package D2PAK D2PAK Shipping 50/Rail 800/Tape & Reel
IFSM
150
A
MBRB2515LT4
Tstg TJ dv/dt
-65 to +150 100 10,000
°C °C V/ms
Preferred devices are recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2003
1
May, 2003 - Rev. 4
Publication Order Number: MBRB2515L/D
MBRB2515L
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance -- Junction to Case -- Junction to Ambient (Note 1.) Symbol R J C R J A Value 1.0 50 Unit °C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 2.) (iF = 19 Amps, TJ = 70°C) (iF = 25 Amps, TJ = 70°C) (iF = 25 Amps, TJ = 25°C) Maximum Instantaneous Reverse Current (Note 2.) (Rated dc Voltage, TJ = 70°C) (Rated dc Voltage, TJ = 25°C) 1. When mounted using minimum recommended pad size on FR-4 board. 2. Pulse Test: Pulse Width = 300 µs, Duty Cycle 2.0%. vF 0.28 0.42 0.45 IR 200 15 mA Volts
i F, INSTANTANEOUS FORWARD CURRENT (AMPS)
50 30 20 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0 0.1 0.2
IR , REVERSE LEAKAGE CURRENT (mA)
70°C TJ = 25°C
1000 400 200 100 40 20 10 4.0 2.0 1.0 0.4 0.2 0.1 0.04 0.02 0.01 0 2.0 4.0 6.0 8.0 10 12 14 16 18 20 VR, REVERSE VOLTAGE (VOLTS) TJ = 100°C 70°C
25°C
0.3
0.4
0.5
vF, INSTANTANEOUS VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
PF(AV) , AVERAGE FORWARD POWER DISSIPATION (WATTS)
Figure 2. Typical Reverse Leakage Current
35 30 25 I 20 15 10 5.0 0 0 5.0 I
TJ = 70°C p PK + 10 AV 5.0
SQUARE WAVE
I F(AV) , AVERAGE FORWARD CURRENT (AMPS)
40
40 35 30 25 20 15 10 5.0 0 60 65 70 75 80 85 90 95 100 SQUARE WAVE dc RATED VOLTAGE APPLIED RqJC = 1°C/W
dc
10
15
20
25
30
35
40
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
TC, CASE TEMPERATURE (°C)
Figure 3. Typical Forward Power Dissipation
Figure 4. Current Derating, Case
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MBRB2515L INFORMATION FOR USING THE D2PAK SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINTS FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the interface between the board and the package. With the total design. The footprint for the semiconductor packages correct pad geometry, the packages will self align when must be the correct size to insure proper solder connection subjected to a solder reflow process.
0.33 8.38
0.42 10.66 0.04 1.016 0.12 3.05 0.67 17.02
0.24 6.096
inches mm
D2PAK POWER DISSIPATION The power dissipation of the D2PAK is a function of the drain pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from t h e device junction to ambient; and the operating temperature, TA. Using the values provided on the data sheet for the D2PAK package, PD can be calculated as follows:
PD = TJ(max) - TA RJA
into the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 2.5 watts.
PD = 150°C - 25°C = 2.5 watts 50°C/W
The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values
The 50°C/W for the D2PAK package assumes the recommended drain pad area of 158K mil2 on FR-4 glass epoxy printed circuit board to achieve a power dissipation of 2.5 watts using the footprint shown. Another alternative is to use a ceramic substrate or an aluminum core board such as Thermal CladTM. By using an aluminum core board material such as Thermal Clad, the power dissipation can be doubled using the same footprint.
GENERAL SOLDERING PRECAUTIONS The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. · Always preheat the device. · The delta temperature between the preheat and soldering should be 100°C or less.* · When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10°C. · The soldering temperature and time shall not exceed 260°C for more than 5 seconds. · When shifting from preheating to soldering, the maximum temperature gradient shall be 5°C or less. · After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. · Mechanical stress or shock should not be applied during cooling * * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. * * Due to shadowing and the inability to set the wave height to incorporate other surface mount components, the D2PAK is not recommended for wave soldering.
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3
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