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Part: MJW1302A
Category:
Discrete
-> Transistors
-> Bipolar
-> Power
Description: Complementary Npn-pnp Silicon Power Bipolar Transistors , Package: TO-247, Pins=3
Company: ON Semiconductor
Datasheet: Download MJW1302A datasheet File size : 211 kB
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Datasheet text preview:
MJW3281A (NPN) MJW1302A (PNP)
Preferred Devices
Complementary NPN-PNP Silicon Power Bipolar Transistors
T h e MJW3281A and MJW1302A are PowerBase t power transistors for high power audio, disk head positioners and other linear applications.
http://onsemi.com
· Designed for 100 W Audio Frequency · Gain Complementary:
Gain Linearity from 100 mA to 7 A hFE = 45 (Min) @ IC = 8 A · Low Harmonic Distortion · High Safe Operation Area 1 A/100 V @ 1 Second · High fT 30 MHz Typical
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating CollectorEmitter Voltage CollectorBase Voltage EmitterBase Voltage CollectorEmitter Voltage 1.5 V Collector Current Continuous Collector Current Peak (Note 1) Base Current Continuous Total Power Dissipation @ TC = 25°C Derate Above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO VCEX IC IB PD TJ, Tstg Value 230 230 5.0 230 15 25 1.5 200 1.43 65 to +150 Unit Vdc Vdc Vdc Vdc Adc Adc Watts W/°C °C
15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 230 VOLTS 200 WATTS
1 2 3 TO247 CASE 340K STYLE 3
MARKING DIAGRAM
MJW xxxxA LLYWW 1 BASE 3 EMITTER
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Symbol RJC RJA Max 0.7 40 Unit °C/W °C/W
2 COLLECTOR MJWxxxxA = Device Code xxxx = 3281 OR 1302 LL = Location Code Y = Year WW = Work Week
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%.
ORDERING INFORMATION
Device MJW3281A MJW1302A Package TO247 TO247 Shipping 30 Units/Rail 30 Units/Rail
Preferred devices are recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2002
1
March, 2002 Rev. 1
Publication Order Number: MJW3281A/D
MJW3281A (NPN) MJW1302A (PNP)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (IC = 100 mAdc, IB = 0) Collector Cutoff Current (VCB = 230 Vdc, IE = 0) Emitter Cutoff Current (VEB = 5 Vdc, IC = 0) SECOND BREAKDOWN Second Breakdown Collector with Base Forward Biased (VCE = 50 Vdc, t = 1 s (nonrepetitive) (VCE = 100 Vdc, t = 1 s (nonrepetitive) ON CHARACTERISTICS DC Current Gain (IC = 100 mAdc, VCE = 5 Vdc) (IC = 1 Adc, VCE = 5 Vdc) (IC = 3 Adc, VCE = 5 Vdc) (IC = 5 Adc, VCE = 5 Vdc) (IC = 7 Adc, VCE = 5 Vdc) (IC = 8 Adc, VCE = 5 Vdc) (IC = 15 Adc, VCE = 5 Vdc) CollectorEmitter Saturation Voltage (IC = 10 Adc, IB = 1 Adc) BaseEmitter On Voltage (IC = 8 Adc, VCE = 5 Vdc) DYNAMIC CHARACTERISTICS CurrentGain Bandwidth Product (IC = 1 Adc, VCE = 5 Vdc, ftest = 1 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1 MHz) fT Cob 600 30 pF MHz hFE 50 50 50 50 50 45 12 VCE(sat) VBE(on) 2 0.4 2 Vdc 125 115 35 200 200 200 200 200 Vdc IS/b 4 1 Adc VCEO(sus) 230 ICBO IEBO 5 50 µAdc µAdc Vdc Symbol Min Typ Max Unit
PNP MJW1302A
f T, CURRENT BANDWIDTH PRODUCT (MHz) 50 VCE = 10 V 40 30 20 10 0 TJ = 25°C ftest = 1 MHz 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) 10 5V f T, CURRENT BANDWIDTH PRODUCT (MHz) 60 50 40 30 20 10 0 0.1 TJ = 25°C ftest = 1 MHz
NPN MJW3281A
VCE = 10 V 5V
1.0 IC, COLLECTOR CURRENT (AMPS)
10
Figure 1. Typical Current Gain Bandwidth Product
Figure 2. Typical Current Gain Bandwidth Product
http://onsemi.com
2
MJW3281A (NPN) MJW1302A (PNP)
TYPICAL CHARACTERISTICS
PNP MJW1302A
1000 1000 25°C TJ = 100°C 100 -25°C
NPN MJW3281A
h FE , DC CURRENT GAIN
TJ = 100°C 100 -25°C
25°C
h FE , DC CURRENT GAIN
10
VCE = 20 V 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100
VCE = 20 V 10 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100
Figure 3. DC Current Gain, VCE = 20 V
Figure 4. DC Current Gain, VCE = 20 V
PNP MJW1302A
1000 1000
NPN MJW3281A
h FE , DC CURRENT GAIN
h FE , DC CURRENT GAIN
25°C TJ = 100°C 100 -25°C
TJ = 100°C 100 25°C -25°C
10
VCE = 5 V 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100
VCE = 5 V 10 0.1 1.0 10 100
IC, COLLECTOR CURRENT (AMPS)
Figure 5. DC Current Gain, VCE = 5 V
Figure 6. DC Current Gain, VCE = 5 V
PNP MJW1302A
45 40 IC , COLLECTOR CURRENT (A) 35 30 25 20 15 10 5.0 0 0 TJ = 25°C 5.0 10 15 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 25 1.5 A IB = 2 A IC, COLLECTOR CURRENT (A) 45 40 35 30 25 20 15 10 5.0 0 0
NPN MJW3281A
1.5 A IB = 2 A 1A 0.5 A
1A 0.5 A
TJ = 25°C 5.0 10 15 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 25
Figure 7. Typical Output Characteristics http://onsemi.com
3
Figure 8. Typical Output Characteristics
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