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Part: MJW18020
Category:
Discrete
-> Transistors
-> Bipolar
-> Power
Description: NPN Silicon Power Transistors High Voltage Planar , Package: TO-247, Pins=3
Company: ON Semiconductor
Datasheet: Download MJW18020 datasheet File size : 301 kB
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Datasheet text preview:
MJW18020
Preferred Devices
NPN Silicon Power Transistors High Voltage Planar
T h e MJW18020 planar High Voltage Power Transistor is specifically Designed for motor control applications, high power supplies and UPS's for which the high reproducibility of DC and S w i t c h i n g parameters minimizes the dead time in bridge configurations.
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· · · ·
Mains features include: High and Excellent Gain Linearity Fast and Very Tight Switching Times Parameters tsi and tfi Very Stable Leakage Current due to the Planar Structure High Reliability
30 AMPERES 1000 VOLTS BVCES 450 VOLTS BVCEO 250 WATTS
1 2
MAXIMUM RATINGS
Rating CollectorEmitter Sustaining Voltage CollectorBase Breakdown Voltage CollectorBase Voltage EmitterBase Voltage Collector Current Continuous Peak (Note 1.) Base Current Continuous Peak (Note 1.) Total Power Dissipation @ TC = 25_C Derate Above 25_C Operating and Storage Junction Temperature Range Symbol VCEO VCES VCBO VEBO IC IB PD TJ, Tstg Value 450 1000 1000 9.0 30 45 6.0 10 250 2.0 65 to +150 Unit Vdc Vdc Vdc Vdc Adc Adc
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TO247 CASE 340K STYLE 3
MARKING DIAGRAM
MJW 18020 LLYWW 1 BASE 3 EMITTER
Watts W/_C _C
2 COLLECTOR MJW18020= Device Code LL = Location Code Y = Year WW = Work Week
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, JunctiontoCase Thermal Resistance, JunctiontoAmbient Maximum Lead Temperature for Soldering Purposes: 1/8" from Case for 5 Seconds Symbol R J C R J A TL Max 0.5 50 275 Unit _C/W
ORDERING INFORMATION
_C/W _C Device MJW18020 Package TO247 Shipping 30 Units/Rail
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%.
Preferred devices are recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2002
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January, 2002 Rev. 0
Publication Order Number: MJW180203/D
MJW18020
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (IC = 100 mAdc, IB = 0) Collector Cutoff Current (VCE = Rated VCEO, IB = 0) Collector Cutoff Current (VCE = Rated VCES, VEB = 0) (TC = 125°C) Emitter Cutoff Current (VCE = 9 Vdc, IC = 0) ON CHARACTERISTICS DC Current Gain (IC = 3 Adc, VCE = 5 Vdc) (TC = 125°C) (IC = 10 Adc VCE = 2 Vdc) (TC = 125°C) (IC = 20 Adc VCE = 2 Vdc) (TC = 125°C) (IC = 10 mAdc VCE = 5 Vdc) BaseEmitter Saturation Voltage (IC = 10 Adc, IB = 2 Adc) (IC = 20 Adc, IB = 4 Adc) VBE(sat) VCE(sat) (TC = 125°C) (IC = 20 Adc, IB = 4 Adc) (TC = 125°C) DYNAMIC CHARACTERISTICS Current Gain Bandwidth Product (IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1 MHz) Input Capacitance (VEB = 8.0) fT Co b Ci b 13 300 7000 500 9000 MHz pF pF 0.2 0.3 0.5 0.9 0.6 1.5 2.0 hFE 14 8 5 5.5 4 14 30 16 14 9 7 25 0.97 1.15 34 1.25 1.5 Vdc Vdc IEBO VCEO(sus) ICEO ICES 450 100 100 500 100 Vdc µAdc µAdc µAdc Symbol Min Typ Max Unit
CollectorEmitter Saturation Voltage (IC = 10 Adc, IB = 2 Adc)
SWITCHING CHARACTERISTICS: Resistive Load (D.C. = 10%, Pulse Width = 70 µs) TurnOn Time Storage Time Fall Time TurnOff Time TurnOn Time Storage Time Fall Time TurnOff Time Fall Time Storage Time Crossover Time Fall Time Storage Time Crossover Time (IC = 20 Adc, IB1 = IB2 = 4 Adc) (IC = 10 Adc, IB1 = IB2 = 2 Adc) (IC= 20 Adc, IB1 = IB2 = 4 Adc, , , Vcc = 125 V) 125 V) (IC = 10 Adc, IB1 = IB2 = 2 Adc, Vcc = 125 V) tOn ts tf tOff tOn ts tf tOff tfi tsi tc tfi tsi tc 540 4.75 380 5.2 965 2.9 350 3.25 142 4.75 320 350 3.0 500 750 6 500 6.5 1200 3.5 500 4 250 6 500 500 3.5 750 ns µs ns µs ns µs ns µs ns µs ns ns µs ns
SWITCHING CHARACTERISTICS: Inductive Load (Vclamp= 300 V , Vcc = 15 V, L = 200 µH)
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MJW18020
TYPICAL CHARACTERISTICS
100 TJ = 125°C TJ = 25°C 100 TJ = 125°C TJ = 25°C
HFE, DC CURRENT GAIN
TJ = 20°C 10 VCE = 2.0 V
HFE, DC CURRENT GAIN
TJ = 20°C 10 VCE = 5.0 V
1.0 0.01
0.1
1.0
10
100
1.0 0.01
0.1
1.0
10
100
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain, VCE = 2.0 V
100.0 Ic/Ib = 5.0 VCE, VOLTAGE (VOLTS) 10.0 VCE, VOLTAGE (VOLTS) 10.0 100.0
Figure 2. DC Current Gain, VCE = 5.0 V
Ic/Ib = 10
1.0 TJ = 20°C 0.1 TJ = 125°C
1.0 TJ = 20°C TJ = 125°C 0.1 TJ = 25°C
0.0 0.001
TJ = 25°C 0.01 0.1 1.0 10 100 IC, COLLECTOR CURRENT (A)
0.0 0.001
0.01
0.1
1.0
10
100
IC, COLLECTOR CURRENT (A)
Figure 3. Typical CollectorEmitter Saturation Voltage, IC/IB = 5.0
10.0 Ic/Ib = 5.0 VBE, VOLTAGE (VOLTS) VBE, VOLTAGE (VOLTS) 10.0
Figure 4. Typical CollectorEmitter Saturation Voltage, IC/IB = 10
Ic/Ib = 10
TJ = 20°C 1.0 TJ = 25°C
TJ = 20°C 1.0 TJ = 25°C
TJ = 125°C 0.1 0.001
TJ = 125°C 0.1 0.001
0.01 0.1 1.0 10 IC, COLLECTOR CURRENT (A)
100
0.01 0.1 1.0 10 IC, COLLECTOR CURRENT (A)
100
Figure 5. Typical BaseEmitter Saturation Voltage, IC/IB = 5.0
Figure 6. Typical BaseEmitter Saturation Voltage, IC/IB = 10
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