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Part: MJW21193
Category:
Discrete
-> Transistors
-> Bipolar
-> Power
Description: Silicon Power Transistors , Package: TO-247, Pins=3
Company: ON Semiconductor
Datasheet: Download MJW21193 datasheet File size : 301 kB
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Datasheet text preview:
MJW21193 (PNP) MJW21194 (NPN)
Preferred Devices
Silicon Power Transistors
The MJW21193 and MJW21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications.
· Total Harmonic Distortion Characterized · High DC Current Gain
hFE = 20 Min @ IC = 8 Adc · Excellent Gain Linearity · High SOA: 2.25 A, 80 V, 1 Second
MAXIMUM RATINGS
Rating CollectorEmitter Voltage CollectorBase Voltage EmitterBase Voltage CollectorEmitter Voltage 1.5 V Collector Current Continuous Collector Current Peak (Note 1) Base Current Continuous Total Power Dissipation @ TC = 25°C Derate Above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO VCEX IC IB PD TJ, Tstg Value 250 400 5.0 400 16 30 5.0 200 1.43 65 to +150 Unit Vdc Vdc Vdc Vdc Adc Adc Watts W/°C °C
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16 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS 200 WATTS
1 2 3 TO247 CASE 340K STYLE 3
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Symbol RJC RJA Max 0.7 40 Unit °C/W °C/W MJW 2119x LLYWW 1 BASE 3 EMITTER
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%.
2 COLLECTOR MJW2119x = Device Code x = 3 or 4 LL = Location Code Y = Year WW = Work Week
ORDERING INFORMATION
Device MJW21193 MJW21194 Package TO247 TO247 Shipping 30 Units/Rail 30 Units/Rail
Preferred devices are recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2002
1
March, 2002 Rev. 1
Publication Order Number: MJW21193/D
MJW21193 (PNP) MJW21194 (NPN)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (IC = 100 mAdc, IB = 0) Collector Cutoff Current (VCE = 200 Vdc, IB = 0) Emitter Cutoff Current (VCE = 5 Vdc, IC = 0) Collector Cutoff Current (VCE = 250 Vdc, VBE(off) = 1.5 Vdc) SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased (VCE = 50 Vdc, t = 1 s (nonrepetitive) (VCE = 80 Vdc, t = 1 s (nonrepetitive) ON CHARACTERISTICS DC Current Gain (IC = 8 Adc, VCE = 5 Vdc) (IC = 16 Adc, IB = 5 Adc) BaseEmitter On Voltage (IC = 8 Adc, VCE = 5 Vdc) CollectorEmitter Saturation Voltage (IC = 8 Adc, IB = 0.8 Adc) (IC = 16 Adc, IB = 3.2 Adc) DYNAMIC CHARACTERISTICS Total Harmonic Distortion at the Output VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS (Matched pair hFE = 50 @ 5 A/5 V) Current Gain Bandwidth Product (IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1 MHz) THD hFE unmatched hFE matched fT Cob 4 0.8 0.08 500 MHz pF % hFE 20 8 VBE(on) VCE(sat) 1.4 4 60 2.2 Vdc Vdc IS/b 4.0 2.25 Adc VCEO(sus) ICEO IEBO ICEX 250 100 100 100 Vdc µAdc µAdc µAdc Symbol Min Typ Max Unit
PNP MJW21193
f T, CURRENT GAIN BANDWIDTH PRODUCT (MHz) 6.5 6.0 5.5 5.0 4.5 4.0 3.5 3.0 0.1 TJ = 25°C ftest = 1 MHz 1.0 IC COLLECTOR CURRENT (AMPS) 10 f T, CURRENT GAIN BANDWIDTH PRODUCT (MHz) VCE = 10 V 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 0.1 TJ = 25°C ftest = 1 MHz
NPN MJW21194
10 V
5V
VCE = 5 V
1.0 IC COLLECTOR CURRENT (AMPS)
10
Figure 1. Typical Current Gain Bandwidth Product
Figure 2. Typical Current Gain Bandwidth Product
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MJW21193 (PNP) MJW21194 (NPN)
TYPICAL CHARACTERISTICS
PNP MJW21193
1000 1000
NPN MJW21194
hFE , DC CURRENT GAIN
TJ = 100°C 100 25°C -25°C VCE = 20 V 10 0.1 1.0 10 IC COLLECTOR CURRENT (AMPS) 100
hFE , DC CURRENT GAIN
TJ = 100°C 25°C 100 -25°C
VCE = 20 V 10 0.1 1.0 10 IC COLLECTOR CURRENT (AMPS) 100
Figure 3. DC Current Gain, VCE = 20 V
Figure 4. DC Current Gain, VCE = 20 V
PNP MJW21193
1000 1000
NPN MJW21194
hFE , DC CURRENT GAIN
TJ = 100°C 25°C 100 -25°C
hFE , DC CURRENT GAIN
TJ = 100°C 25°C 100 -25°C
VCE = 5 V 10 0.1 10 0.1
VCE = 20 V 1.0 10 IC COLLECTOR CURRENT (AMPS) 100 1.0 10 IC COLLECTOR CURRENT (AMPS) 100
Figure 5. DC Current Gain, VCE = 5 V PNP MJW21193
30 I C, COLLECTOR CURRENT (A) I C, COLLECTOR CURRENT (A) 25 20 15 10 5.0 TJ = 25°C 0 0 5.0 10 15 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 25 0 0 1.5 A IB = 2 A 1A 0.5 A 35 30 25 20 15 10 5.0
Figure 6. DC Current Gain, VCE = 5 V NPN MJW21194
IB = 2 A 1.5 A 1A
0.5 A
TJ = 25°C 5.0 10 15 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 25
Figure 7. Typical Output Characteristics http://onsemi.com
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Figure 8. Typical Output Characteristics
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