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Part: MJW21195
Category:
Discrete
-> Transistors
-> Bipolar
-> Power
Description: Bipolar Power TO247 PNP 16A 250V, Package: TO-247, Pins=3
Company: ON Semiconductor
Datasheet: Download MJW21195 datasheet File size : 301 kB
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Datasheet text preview:
MJW21195 (PNP) MJW21196 (NPN)
Preferred Devices
Silicon Power Transistors
The MJW21195 and MJW21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications.
· Total Harmonic Distortion Characterized · High DC Current Gain
hFE = 20 Min @ IC = 8 Adc · Excellent Gain Linearity · High SOA: 2.25 A, 80 V, 1 Second
MAXIMUM RATINGS
Rating CollectorEmitter Voltage CollectorBase Voltage EmitterBase Voltage CollectorEmitter Voltage 1.5 V Collector Current Continuous Collector Current Peak (Note 1) Base Current Continuous Total Power Dissipation @ TC = 25°C Derate Above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO VCEX IC IB PD TJ, Tstg Value 250 400 5.0 400 16 30 5.0 200 1.43 65 to +150 Unit Vdc Vdc Vdc Vdc Adc Adc Watts W/°C °C
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16 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS 200 WATTS
1 2 3 TO247 CASE 340K STYLE 3
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Symbol RJC RJA Max 0.7 40 Unit °C/W °C/W MJW 2119x LLYWW 1 BASE 3 EMITTER
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%.
2 COLLECTOR MJW2119x = Device Code x = 5 or 6 LL = Location Code Y = Year WW = Work Week
ORDERING INFORMATION
Device MJW21195 MJW21196 Package TO247 TO247 Shipping 30 Units/Rail 30 Units/Rail
Preferred devices are recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2002
1
March, 2002 Rev. 1
Publication Order Number: MJW21195/D
MJW21195 (PNP) MJW21196 (NPN)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (IC = 100 mAdc, IB = 0) Collector Cutoff Current (VCE = 200 Vdc, IB = 0) VCEO(sus) ICEO 250 100 Vdc µAdc Symbol Min Typical Max Unit
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Emitter Cutoff Current (VCE = 5 Vdc, IC = 0) Collector Cutoff Current (VCE = 250 Vdc, VBE(off) = 1.5 Vdc) SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased (VCE = 50 Vdc, t = 1 s (nonrepetitive) (VCE = 80 Vdc, t = 1 s (nonrepetitive) ON CHARACTERISTICS DC Current Gain (IC = 8 Adc, VCE = 5 Vdc) (IC = 16 Adc, IB = 5 Adc) BaseEmitter On Voltage (IC = 8 Adc, VCE = 5 Vdc) CollectorEmitter Saturation Voltage (IC = 8 Adc, IB = 0.8 Adc) (IC = 16 Adc, IB = 3.2 Adc) DYNAMIC CHARACTERISTICS Total Harmonic Distortion at the Output VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS (Matched pair hFE = 50 @ 5 A/5 V) Current Gain Bandwidth Product (IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1 MHz) THD hFE unmatched hFE matched fT Cob 4 0.8 0.08 500 MHz pF % hFE 20 8 VBE(on) VCE(sat) 1.0 3 80 2.0 Vdc Vdc IS/b 4.0 2.25 Adc IEBO ICEX 50 50 µAdc µAdc Symbol Min Typical Max Unit
PNP MJW21195
F T, CURRENT BANDWIDTH PRODUCT (MHz) 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 0.1 TJ = 25°C ftest = 1 MHz VCE = 5 V F T, CURRENT BANDWIDTH PRODUCT (MHz) 6.5 VCE = 10 V 7.5 7.0 6.5 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0
NPN MJW21196
VCE = 10 V
VCE = 5 V
TJ = 25°C ftest = 1 MHz
1.0 IC, COLLECTOR CURRENT (AMPS)
10
0.1
1.0 IC, COLLECTOR CURRENT (AMPS)
10
Figure 1. Typical Current Gain Bandwidth Product
Figure 2. Typical Current Gain Bandwidth Product
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MJW21195 (PNP) MJW21196 (NPN)
TYPICAL CHARACTERISTICS
PNP MJW21195
1000 1000
NPN MJW21196
h FE , DC CURRENT GAIN
100
TJ = 100°C 25°C -25°C VCE = 20 V 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100
h FE , DC CURRENT GAIN
100
TJ = 100°C 25°C -25°C VCE = 20 V 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100
10
10
Figure 3. DC Current Gain, VCE = 20 V
Figure 4. DC Current Gain, VCE = 20 V
PNP MJW21195
1000 1000
NPN MJW21196
h FE , DC CURRENT GAIN
100
TJ = 100°C 25°C -25°C VCE = 5 V 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100
h FE , DC CURRENT GAIN
100
TJ = 100°C 25°C -25°C VCE = 5 V 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100
10
10
Figure 5. DC Current Gain, VCE = 5 V PNP MJW21195
30 IC , COLLECTOR CURRENT (A) IC , COLLECTOR CURRENT (A) 25 20 15 10 5.0 0 0 2.0 A 1.5 A 1.0 A IB = 0.5 A 30 25 20 15 10 5.0 0 0
Figure 6. DC Current Gain, VCE = 5 V NPN MJW21196
2.0 A 1.5 A 1.0 A IB = 0.5 A
TJ = 25°C 5.0 10 15 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 25
TJ = 25°C 5.0 10 15 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 25
Figure 7. Typical Output Characteristics http://onsemi.com
3
Figure 8. Typical Output Characteristics
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