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Part: MMBT6427LT1
Category:
Discrete
-> Transistors
-> Bipolar
-> Darlington
Description: Small Signal Darlington Npn, Package: SOT-23 (TO-236), Pins=3
Company: ON Semiconductor
Datasheet: Download MMBT6427LT1 datasheet File size : 61 kB
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Datasheet text preview:
ON Semiconductort
Darlington Transistor
NPN Silicon
MAXIMUM RATINGS
Rating CollectorEmitter Voltage CollectorBase Voltage EmitterBase Voltage Collector Current -- Continuous Symbol VCEO VCBO VEBO IC Value 40 40 12 500 Unit Vdc
MMBT6427LT1
ON Semiconductor Preferred Device
3
Vdc Vdc mAdc
1 2
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 Rq J A PD 556 300 2.4 Rq J A TJ, Tstg 417 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C
CASE 31808, STYLE 6 SOT23 (TO236AB)
COLLECTOR 3 BASE 1
EMITTER 2
DEVICE MARKING
MMBT6427LT1 = 1V
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (IC = 10 mAdc, VBE = 0) CollectorBase Breakdown Voltage (IC = 100 mAdc, IE = 0) EmitterBase Breakdown Voltage (IC = 10 mAdc, IC = 0) Collector Cutoff Current (VCE = 25 Vdc, IB = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) Emitter Cutoff Current (VEB = 10 Vdc, IC = 0) 1. FR5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. V(BR)CEO 40 V(BR)CBO 40 V(BR)EBO 12 ICES -- ICBO -- IEBO -- 50 50 nAdc 1.0 nAdc -- µAdc -- Vdc -- Vdc Vdc
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2001
1
March, 2001 Rev. 1
Publication Order Number: MMBT6427LT1/D
MMBT6427LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) (IC = 100 mAdc, VCE = 5.0 Vdc) (IC = 500 mAdc, VCE = 5.0 Vdc) CollectorEmitter Saturation Voltage (IC = 50 mAdc, IB = 0.5 mAdc) (IC = 500 mAdc, IB = 0.5 mAdc) BaseEmitter Saturation Voltage (IC = 500 mAdc, IB = 0.5 mAdc) BaseEmitter On Voltage (IC = 50 mAdc, VCE = 5.0 Vdc) hFE 10,000 20,000 14,000 VCE(sat)(3) -- -- VBE(sat) -- VBE(on) -- 1.75 2.0 Vdc 1.2 1.5 Vdc 100,000 200,000 140,000 Vdc --
SMALLSIGNAL CHARACTERISTICS
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) CurrentGain -- High Frequency (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) Noise Figure (IC = 1.0 mAdc, VCE = 5.0 Vdc, RS = 100 k, f = 1.0 kHz) 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. Co b o -- Ci b o -- |hfe| 1.3 NF -- 10 -- dB 15 Vdc 7.0 pF pF
RS
in en
IDEAL TRANSISTOR
Figure 1. Transistor Noise Model
http://onsemi.com
2
MMBT6427LT1
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)
500 200 100 10 µA 50 100 µA 20 10 5.0 10 20 50 100 200 IC = 1.0 mA 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 500 1 k 2 k 5 k 10 k 20 k f, FREQUENCY (Hz) 50 k 100 k 0.02 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k f, FREQUENCY (Hz) 50 k 100 k 100 µA 10 µA
BANDWIDTH = 1.0 Hz RS 0 i n, NOISE CURRENT (pA)
BANDWIDTH = 1.0 Hz
en, NOISE VOLTAGE (nV)
IC = 1.0 mA
Figure 2. Noise Voltage
Figure 3. Noise Current
VT, TOTAL WIDEBAND NOISE VOLTAGE (nV)
200 BANDWIDTH = 10 Hz TO 15.7 kHz NF, NOISE FIGURE (dB) IC = 10 µA
14 12 10 8.0 6.0 4.0 2.0 5.0 10 20 50 100 200 RS, SOURCE RESISTANCE (k) 500 1000 0 1.0 2.0 5.0 IC = 1.0 mA 100 µA
BANDWIDTH = 10 Hz TO 15.7 kHz
100 70 50 30 20
10 µA
100 µA
1.0 mA
10
1.0
2.0
10 20 50 100 200 RS, SOURCE RESISTANCE (k)
500
1000
Figure 4. Total Wideband Noise Voltage
Figure 5. Wideband Noise Figure
http://onsemi.com
3
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