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Part: MMBT6428LT1
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
Description: Small Signal General Purpose Transistor, Package: SOT-23 (TO-236), Pins=3
Company: ON Semiconductor
Datasheet: Download MMBT6428LT1 datasheet File size : 61 kB
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Datasheet text preview:
ON Semiconductort
Amplifier Transistors
NPN Silicon
MMBT6428LT1 MMBT6429LT1
3
MAXIMUM RATINGS
Rating CollectorEmitter Voltage CollectorBase Voltage EmitterBase Voltage Collector Current -- Continuous Symbol VCEO VCBO VEBO IC 6428LT1 50 60 6.0 200 6429LT1 45 55 Unit Vdc Vdc Vdc mAdc
1 2
CASE 31808, STYLE 6 SOT23 (TO236) COLLECTOR 3 1 BASE 2 EMITTER
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 Rq J A PD 556 300 2.4 Rq J A TJ, Tstg 417 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C
DEVICE MARKING
MMBT6428LT1 = 1KM; MMBT6429LT1 = 1L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) (IC = 1.0 mAdc, IB = 0) CollectorBase Breakdown Voltage (IC = 0.1 mAdc, IE = 0) (IC = 0.1 mAdc, IE = 0) Collector Cutoff Current (VCE = 30 Vdc) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) 1. FR5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. V(BR)CEO MMBT6428 MMBT6429 V(BR)CBO MMBT6428 MMBT6429 ICES -- ICBO -- IEBO -- 0.01 0.01 µAdc 0.1 µAdc 60 55 -- -- µAdc 50 45 -- -- Vdc Vdc
© Semiconductor Components Industries, LLC, 2001
1
November, 2001 Rev. 2
Publication Order Number: MMBT6428LT1/D
MMBT6428LT1 MMBT6429LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 0.01 mAdc, VCE = 5.0 Vdc) hFE MMBT6428 MMBT6429 MMBT6428 MMBT6429 MMBT6428 MMBT6429 MMBT6428 MMBT6429 VCE(sat) -- -- VBE(on) 0.56 0.66 0.2 0.6 Vdc 250 500 250 500 250 500 250 500 -- -- 650 1250 -- -- -- -- Vdc --
(IC = 0.1 mAdc, VCE = 5.0 Vdc)
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
(IC = 10 mAdc, VCE = 5.0 Vdc) CollectorEmitter Saturation Voltage (IC = 10 mAdc, IB = 0.5 mAdc) (IC = 100 mAdc, IB = 5.0 mAdc) BaseEmitter On Voltage (IC = 1.0 mAdc, VCE = 5.0 mAdc)
SMALLSIGNAL CHARACTERISTICS
CurrentGain -- Bandwidth Product (IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) fT 100 Cobo -- Cibo -- 8.0 3.0 pF 700 pF MHz
RS
in en
IDEAL TRANSISTOR
Figure 1. Transistor Noise Model
http://onsemi.com
2
MMBT6428LT1 MMBT6429LT1
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C) NOISE VOLTAGE
30 20 en , NOISE VOLTAGE (nV) BANDWIDTH = 1.0 Hz en , NOISE VOLTAGE (nV) IC = 10 mA 3.0 mA 1.0 mA RS 0 30 BANDWIDTH = 1.0 Hz 20 RS 0 f = 10 Hz 100 Hz 10 kHz
10 7.0 5.0
10 7.0 5.0
1.0 kHz
3.0
300 µA 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k f, FREQUENCY (Hz)
3.0 0.01 0.02
100 kHz 0.05 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA) 5.0 10
Figure 2. Effects of Frequency
10 7.0 5.0 In, NOISE CURRENT (pA) 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 RS 0 10 20 10 µA 50 100 200 20 16 NF, NOISE FIGURE (dB) 12 8.0 4.0 0 10
Figure 3. Effects of Collector Current
BANDWIDTH = 1.0 Hz IC = 10 mA 3.0 mA 1.0 mA 300 µA 100 µA 30 µA
BANDWIDTH = 10 Hz to 15.7 kHz
500 µA 100 µA 10 µA
IC = 1.0 mA
500 1 k 2 k 5 k 10 k 20 k 50 k 100 k f, FREQUENCY (Hz)
20
50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k RS, SOURCE RESISTANCE (OHMS)
Figure 4. Noise Current 100 Hz NOISE DATA
300 200 VT, TOTAL NOISE VOLTAGE (nV) 100 70 50 30 20 10 7.0 5.0 3.0 10 20 20 BANDWIDTH = 1.0 Hz 100 µA 3.0 mA 1.0 mA 300 µA 30 µA 10 µA IC = 10 mA NF, NOISE FIGURE (dB) 16 12 8.0
Figure 5. Wideband Noise Figure
IC = 10 mA
3.0 mA 1.0 mA 300 µA 100 µA
4.0 0 BANDWIDTH = 1.0 Hz 10 20
30 µA
10 µA
50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k RS, SOURCE RESISTANCE (OHMS)
50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k RS, SOURCE RESISTANCE (OHMS)
Figure 6. Total Noise Voltage
Figure 7. Noise Figure
http://onsemi.com
3
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