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Part: MMBT6429LT1
Category:
Discrete
Description: Small Signal General Purpose Transistor, Package: SOT-23 (TO-236), Pins=3
Company: ON Semiconductor
Datasheet: Download MMBT6429LT1 datasheet File size : 32 kB
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Datasheet text preview:
MBT6429DW1T1 Amplifier Transistors
NPN Silicon
MAXIMUM RATINGS
Rating Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous Symbol VCEO VCBO VEBO IC 6429DW1T1 45 55 6.0 200 Unit Vdc Vdc Vdc mAdc (3) (2) (1)
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THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation (Note 1) TA = 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD 150 Rq J A TJ, Tstg 833 - 55 to +150 °C/W °C
1 2 6
Max
Unit mW (4) (5) (6)
5 4
MARKING DIAGRAM
6
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended foot print.
3
1Td SC-88 (SOT-363) 419B 1 = Specific Device Code = Date Code
1T
d
ORDERING INFORMATION
Device MBT6429DW1T1 Package SC-88 Shipping 3000 / Tape & Reel
© Semiconductor Components Industries, LLC, 2003
1
March, 2003 - Rev. 0
Publication Order Number: MBT6429DW1T1/D
MBT6429DW1T1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector - Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) Collector Cutoff Current (VCE = 30 Vdc) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) ON CHARACTERISTICS DC Current Gain (IC = 0.01 mAdc, VCE = 5.0 Vdc) (IC = 0.1 mAdc, VCE = 5.0 Vdc) (IC = 1.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc) Collector - Emitter Saturation Voltage (IC = 10 mAdc, IB = 0.5 mAdc) (IC = 100 mAdc, IB = 5.0 mAdc) Base - Emitter On Voltage (IC = 1.0 mAdc, VCE = 5.0 mAdc) SMALL- SIGNAL CHARACTERISTICS Current - Gain - Bandwidth Product (IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) fT 100 Co b o Ci b o 8.0 3.0 pF 700 pF MHz hFE 500 500 500 500 VCE(sat) VBE(on) 0.56 0.66 0.2 0.6 Vdc 125 0 Vdc V(BR)CEO 45 V(BR)CBO 55 ICES ICBO IEBO 0.01 0.01 mAdc 0.1 mAdc mAdc Vdc Vdc Symbol Min Max Unit
RS
in en
IDEAL TRANSISTOR
Figure 1. Transistor Noise Model
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MBT6429DW1T1
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C) NOISE VOLTAGE
30 BANDWIDTH = 1.0 Hz 20 en , NOISE VOLTAGE (nV) IC = 10 mA 3.0 mA 1.0 mA en , NOISE VOLTAGE (nV) RS 0 20 30 BANDWIDTH = 1.0 Hz RS 0 f = 10 Hz 100 Hz 10 kHz 5.0
10 7.0 5.0
10 7.0
1.0 kHz
300 mA 3.0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k f, FREQUENCY (Hz) 3.0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA)
100 kHz 5.0 10
Figure 2. Effects of Frequency
10 7.0 5.0 In, NOISE CURRENT (pA) 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 RS 0 10 20 10 mA 50 100 200 3.0 mA 1.0 mA 300 mA 100 mA 30 mA 0 10 20 20 16 NF, NOISE FIGURE (dB)
Figure 3. Effects of Collector Current
BANDWIDTH = 1.0 Hz IC = 10 mA
BANDWIDTH = 10 Hz to 15.7 kHz
12 500 mA 100 mA 4.0 10 mA IC = 1.0 mA
8.0
500 1 k 2 k 5 k 10 k 20 k 50 k 100 k f, FREQUENCY (Hz)
50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k RS, SOURCE RESISTANCE (OHMS)
Figure 4. Noise Current 100 Hz NOISE DATA
300 200 VT, TOTAL NOISE VOLTAGE (nV) 100 70 50 30 20 10 7.0 5.0 3.0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k RS, SOURCE RESISTANCE (OHMS) 20 BANDWIDTH = 1.0 Hz 100 mA 3.0 mA 1.0 mA 300 mA 30 mA 10 mA IC = 10 mA NF, NOISE FIGURE (dB) 16 12 8.0
Figure 5. Wideband Noise Figure
IC = 10 mA
3.0 mA 1.0 mA 300 mA 100 mA
4.0 BANDWIDTH = 1.0 Hz 0 10 20
30 mA
10 mA
50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k RS, SOURCE RESISTANCE (OHMS)
Figure 6. Total Noise Voltage
Figure 7. Noise Figure
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3
Others parts begin by mm
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