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Part: MMBT6517LT1
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
Description: Small Signalhigh Voltage Transistor-NPN, Package: SOT-23 (TO-236), Pins=3
Company: ON Semiconductor
Datasheet: Download MMBT6517LT1 datasheet File size : 209 kB
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Datasheet text preview:
ON Semiconductort
High Voltage Transistor
NPN Silicon
MMBT6517LT1
3 1
MAXIMUM RATINGS
Rating CollectorEmitter Voltage CollectorBase Voltage EmitterBase Voltage Base Current Collector Current -- Continuous Symbol VCEO VCBO VEBO IB IC Value 350 350 5.0 250 500 Unit Vdc Vdc Vdc mAdc mAdc 1 BASE
2
CASE 31808, STYLE 6 SOT23 (TO236AB) COLLECTOR 3
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 Rq J A PD 556 300 2.4 Rq J A TJ, Tstg 417 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C
2 EMITTER
DEVICE MARKING
MMBT6517LT1 = 1Z
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (IC = 1.0 mAdc) CollectorBase Breakdown Voltage (IC = 100 mAdc) EmitterBase Breakdown Voltage (IE = 10 mAdc) Collector Cutoff Current (VCB = 250 Vdc) Emitter Cutoff Current (VEB = 5.0 Vdc) 1. FR5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. V(BR)CEO 350 V(BR)CBO 350 V(BR)EBO 6.0 ICBO -- IEBO -- 50 50 nAdc -- nAdc -- Vdc -- Vdc Vdc
© Semiconductor Components Industries, LLC, 2001
1
November, 2001 Rev. 2
Publication Order Number: MMBT6517LT1/D
MMBT6517LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 30 mAdc, VCE = 10 Vdc) (IC = 50 mAdc, VCE = 10 Vdc) (IC = 100 mAdc, VCE = 10 Vdc) CollectorEmitter Saturation Voltage (3) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 20 mAdc, IB = 2.0 mAdc) (IC = 30 mAdc, IB = 3.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) BaseEmitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 20 mAdc, IB = 2.0 mAdc) (IC = 30 mAdc, IB = 3.0 mAdc) BaseEmitter On Voltage (IC = 100 mAdc, VCE = 10 Vdc) hFE 20 30 30 20 15 VCE(sat) -- -- -- -- VBE(sat) -- -- -- VBE(on) -- 2.0 0.75 0.85 0.90 Vdc 0.30 0.35 0.50 1.0 Vdc -- -- 200 200 -- Vdc --
SMALLSIGNAL CHARACTERISTICS
Current Gain -- Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 20 MHz) CollectorBase Capacitance (VCB = 20 Vdc, f = 1.0 MHz) EmitterBase Capacitance (VEB = 0.5 Vdc, f = 1.0 MHz) 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. fT 40 Cc b -- Ceb -- 80 6.0 pF 200 pF MHz
Figure 1.
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MMBT6517LT1
200 BANDWIDTH PRODUCT (MHz) VCE = 10 V TJ = 125°C 100 70 50 TJ = 25°C VCE = 20 V f = 20 MHz
hFE , DC CURRENT GAIN
100 70 50 30 20
25°C
-55°C
30 20
10 1.0
f T, CURRENT-GAIN
2.0
3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA)
50 70 100
10 1.0
2.0
3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA)
50 70
100
Figure 1. DC Current Gain
Figure 2. CurrentGain -- Bandwidth Product
1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 0.2 0 1.0 2.0
TJ = 25°C
RV, TEMPERATURE COEFFICIENTS (mV/°C)
1.4
2.5 2.0 1.5 1.0 0.5 0
IC + 10 IB 25°C to 125°C RVC for VCE(sat) -55°C to 25°C -55°C to 125°C RVB for VBE 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100
VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 10 V
-0.5 -1.0 -1.5 -2.0 -2.5 1.0
VCE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 5.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA)
Figure 3. "On" Voltages
Figure 4. Temperature Coefficients
100 70 50 C, CAPACITANCE (pF) 30 20 10 7.0 5.0 3.0 2.0 1.0 0.2 0.5
TJ = 25°C Ceb
Ccb
1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS)
50 100 200
Figure 5. Capacitance
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3
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