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Part: MMBT6520LT3
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
Description: Small Signal High Voltage-PNP, Package: SOT-23 (TO-236), Pins=3
Company: ON Semiconductor
Datasheet: Download MMBT6520LT3 datasheet File size : 209 kB
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Datasheet text preview:
ON Semiconductort
High Voltage Transistor
PNP Silicon
MMBT6520LT1
3 1 2
CASE 31808, STYLE 6 SOT23 (TO236AF)
MAXIMUM RATINGS
Rating CollectorEmitter Voltage CollectorBase Voltage EmitterBase Voltage Base Current Collector Current -- Continuous Symbol VCEO VCBO VEBO IB IC Value 350 350 5.0 250 500 Unit Vdc Vdc Vdc mA mAdc 2 EMITTER 1 BASE COLLECTOR 3
DEVICE MARKING
MMBT6520LT1 = 2Z
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR-5 Board (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RJA PD 556 300 2.4 RJA TJ, Tstg 417 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (IC = 1.0 mA) CollectorBase Breakdown Voltage (IC = 100 µA) EmitterBase Breakdown Voltage (IE = 10 µA) Collector Cutoff Current (VCB = 250 V) Emitter Cutoff Current (VEB = 4.0 V) 1. FR5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 350 350 5.0 -- -- -- -- -- 50 50 Vdc Vdc Vdc nA nA
© Semiconductor Components Industries, LLC, 2001
1
November, 2001 Rev. 2
Publication Order Number: MMBT6520LT1/D
MMBT6520LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 1.0 mA, VCE = 10 V) (IC = 10 mA, VCE = 10 V) (IC = 30 mA, VCE = 10 V) (IC = 50 mA, VCE = 10 V) (IC = 100 mA, VCE = 10 V) CollectorEmitter Saturation Voltage (IC = 10 mA, IB = 1.0 mA) (IC = 20 mA, IB = 2.0 mA) (IC = 30 mA, IB = 3.0 mA) (IC = 50 mA, IB = 5.0 mA) BaseEmitter Saturation Voltage (IC = 10 mA, IB = 1.0 mA) (IC = 20 mA, IB = 2.0 mA) (IC = 30 mA, IB = 3.0 mA) BaseEmitter On Voltage (IC = 100 mA, VCE = 10 V) hFE 20 30 30 20 15 VCE(sat) -- -- -- -- VBE(sat) -- -- -- VBE(on) -- 0.75 0.85 0.90 2.0 Vdc 0.30 0.35 0.50 1.0 Vdc -- -- 200 200 -- Vdc --
SMALLSIGNAL CHARACTERISTICS
CurrentGain -- Bandwidth Product (IC = 10 mA, VCE = 20 V, f = 20 MHz) CollectorBase Capacitance (VCB= 20 V, f = 1.0 MHz) EmitterBase Capacitance (VEB= 0.5 V, f = 1.0 MHz) fT Cc b Ceb 40 -- -- 200 6.0 100 MHz pF pF
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MMBT6520LT1
200 BANDWIDTH PRODUCT (MHz) VCE = 10 V TJ = 125°C 100 70 50 TJ = 25°C VCE = 20 V f = 20 MHz
hFE, DC CURRENT GAIN
100 70 50
25°C
-55°C
30 20
30 20 1.0
f T, CURRENT-GAIN
2.0
3.0
5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA)
50
70 100
10 1.0
2.0
3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA)
50 70
100
Figure 1. DC Current Gain
Figure 2. CurrentGain -- Bandwidth Product
1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 0.2 0 1.0 2.0
TJ = 25°C
RV, TEMPERATURE COEFFICIENTS (mV/°C)
1.4
2.5 2.0 1.5 1.0 0.5 0
IC + 10 IB 25°C to 125°C RVC for VCE(sat) -55°C to 25°C -55°C to 125°C RVB for VBE 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100
VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 10 V
-0.5 -1.0 -1.5 -2.0 -2.5 1.0
VCE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 5.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA)
Figure 3. "On" Voltages
Figure 4. Temperature Coefficients
100 70 50 C, CAPACITANCE (pF) 30 20 10 7.0 5.0 3.0 2.0 1.0 0.2 0.5
TJ = 25°C Ceb t, TIME (ns)
1.0 k 700 500 300 200 100 70 50 30 20
td @ VBE(off) = 2.0 V
VCE(off) = 100 V IC/IB = 5.0 TJ = 25°C
tr
Ccb
1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS)
50 100 200
10 1.0
2.0
3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA)
50
70 100
Figure 5. Capacitance
Figure 6. TurnOn Time
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3
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