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Part: MMBT6521LT1
Category:
Discrete
Description: SS Transistor, SOT-23, Package: SOT-23 (TO-236), Pins=3
Company: ON Semiconductor
Datasheet: Download MMBT6521LT1 datasheet File size : 209 kB
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Datasheet text preview:
MMBT6521LT1 Amplifier Transistor
NPN Silicon
MAXIMUM RATINGS
Rating Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current -- Continuous Symbol VCEO VCBO VEBO IC Value 25 40 4.0 100 Unit Vdc Vdc Vdc mAdc 1 BASE 2 EMITTER COLLECTOR 3
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THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR- 5 TA = 25°C Derate above 25°C Board(1) Symbol PD Max 225 1.8 Rq J A PD 556 300 2.4 Rq J A TJ, Tstg 417 - 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C
Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature
3 1 2
CASE 318 - 08, STYLE 6 SOT- 23 (TO - 236)
RO
M
RO = Device Code M = Date Code
© Semiconductor Components Industries, LLC, 2003
1
April, 2003 - Rev. 3
Publication Order Number: MMBT6521LT1/D
MMBT6521LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector - Emitter Breakdown Voltage (IC = 0.5 mAdc, IB = 0) Emitter - Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) 1. FR- 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. V(BR)CEO 25 V(BR)EBO 4.0 ICBO -- IEBO -- 10 0.5 -- µAdc nAdc -- Vdc Vdc
ON CHARACTERISTICS
DC Current Gain (IC = 100 µAdc, VCE = 10 Vdc) (IC = 2.0 mAdc, VCE = 10 Vdc) Collector - Emitter Saturation Voltage (IC = 50 mAdc, IB = 5.0 mAdc) hFE 150 300 VCE(sat) -- 0.5 -- 600 Vdc --
SMALL- SIGNAL CHARACTERISTICS
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Noise Figure (IC = 10 mAdc, VCE = 5.0 Vdc, Power Bandwidth = 15.7 kHz, 3.0 dB points @ = 10 Hz and 10 kHz) Co b o -- NF -- 3.0 3.5 dB pF
RS
in en
IDEAL TRANSISTOR
Figure 1. Transistor Noise Model
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MMBT6521LT1
EQUIVALENT SWITCHING TIME TEST CIRCUITS
+3.0 V 300 ns DUTY CYCLE = 2% -0.5 V <1.0 ns +10.9 V 10 k CS < 4.0 pF* 275 10 < t1 < 500 µs DUTY CYCLE = 2% 0 -9.1 V < 1.0 ns +3.0 V +10.9 V 10 k CS < 4.0 pF* 275
t1
1N916
*Total shunt capacitance of test jig and connectors
Figure 2. Turn-On Time
Figure 3. Turn-Off Time
TYPICAL NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)
20 IC = 1.0 mA en, NOISE VOLTAGE (nV) 300 µA BANDWIDTH = 1.0 Hz RS = 0 In, NOISE CURRENT (pA) 100 50 20 10 5.0 2.0 1.0 0.5 0.2 2.0 10 20 50 100 200 500 1 k f, FREQUENCY (Hz) 2k 5k 10 k 0.1 10 20 50 100 200 500 1 k f, FREQUENCY (Hz) 2k 5k 10 k 30 µA 10 µA IC = 1.0 mA 300 µA 100 µA BANDWIDTH = 1.0 Hz RS
10 7.0 5.0 10 µA 3.0
100 µA
30 µA
Figure 4. Noise Voltage
Figure 5. Noise Current
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