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Part: MMBT6589T1
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
Description: High Current Surface Mount PNP Switching Transistor For Load Management in Portable Applications, Package: Tsop, Pins=6
Company: ON Semiconductor
Datasheet: Download MMBT6589T1 datasheet File size : 209 kB
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Datasheet text preview:
MMBT6589T1 High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications
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30 VOLTS 2.0 AMPS PNP TRANSISTOR
MAXIMUM RATINGS (TA = 25°C)
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Collector Current Peak Electrostatic Discharge Symbol VCEO VCBO VEBO IC ICM ESD Max 30 50 5.0 1.0 2.0 Unit Vdc Vdc Vdc Adc A 3 BASE 6 EMITTER COLLECTOR 1, 2, 5
HBM Class 3 MM Class C
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation (Single Pulse < 10 sec.) Junction and Storage Temperature Range (1) FR4 @ Minimum Pad (2) FR4 @ 1.0 X 1.0 inch Pad (3) ref: Figure 8 Symbol PD (1) Max 540 4.4 RJA (1) PD (2) 230 925 7.4 RJA (2) (2)(3) PDsingle TJ, Tstg 135 1.3 55 to +150 Unit mW 4 mW/°C °C/W mW mW/°C °C/W W °C G3 (date code) 5 6 3 2 1
CASE 318G TSOP6 STYLE 7
DEVICE MARKING
ORDERING INFORMATION
Device MMBT6589T1 Package TSOP6 Shipping 3000/Tape & Reel
© Semiconductor Components Industries, LLC, 2001
1
April, 2000 Rev. 0
Publication Order Number: MMBT6589T1/D
MMBT6589T1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (IC = 10 mAdc, IB = 0) CollectorBase Breakdown Voltage (IC = 0.1 mAdc, IE = 0) EmitterBase Breakdown Voltage (IE = 0.1 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) CollectorEmitter Cutoff Current (VCES = 30 Vdc) Emitter Cutoff Current (VEB = 4.0 Vdc) V(BR)CEO 30 V(BR)CBO 50 V(BR)EBO 5.0 ICBO ICES IEBO 0.1 0.1 mAdc 0.1 mAdc mAdc Vdc Vdc Vdc
ON CHARACTERISTICS
DC Current Gain (1) (Figure 1) (IC = 1.0 mA, VCE = 2.0 V) (IC = 500 mA, VCE = 2.0 V) (IC = 1.0 A, VCE = 2.0 V) (IC = 2.0 A, VCE = 2.0 V) CollectorEmitter Saturation Voltage (1) (Figure 3) (IC = 0.5 A, IB = 0.05 A) (IC = 1.0 A, IB = 0.1 A) (IC = 2.0 A, IB = 0.2 A) BaseEmitter Saturation Voltage (1) (Figure 2) (IC = 1.0 A, IB = 0.1 A) BaseEmitter Turnon Voltage (1) (IC = 1.0 A, VCE = 2.0 V) Cutoff Frequency (IC = 100 mA, VCE = 5.0 V, f = 100 MHz) Output Capacitance (VCB = 5.0 V, f = 1.0 MHz) 1. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle 2% hFE 100 100 80 40 VCE(sat) VBE(sat) VBE(on) fT 100 Cobo 20 pF 1.1 MHz 1.2 V 0.25 0.30 0.65 V 300 V
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2
MMBT6589T1
200 VCE = -2.0 V h FE , DC CURRENT GAIN h FE , DC CURRENT GAIN 150 230 210 190 170 150 130 110 90 70 0 0.001 0.01 0.1 1.0 10 50 1.0 10 -55°C 25°C 125°C VCE = -1.0 V
100
50
100
1000
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain versus Collector Current
1.0 VBE(sat) , BASE EMITTER SATURATION VOLTAGE (VOLTS) 0.9 0.8 V, VOLTAGE (VOLTS) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 1.0 10 VCE(sat) 100 1000 VBE(sat) VBE(on) 1.0 0.95 0.9 0.85 0.8 0.75 0.7 0.65 0.6 0.55 0.5
Figure 2. DC Current Gain versus Collector Current
IC/IB = 10
IC/IB = 100
0.001
0.01
0.1
1.0
10
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (AMPS)
Figure 3. "On" Voltages
Figure 4. Base Emitter Saturation Voltage versus Collector Current
1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1.0 10 IC/IB = 10 IC/IB = 100
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.8 0.6 1000 mA 0.4 100 mA 0.2 10 mA 0 0.01 50 mA 0.1 1.0 10 100 1000
VCE(sat) , COLLECTOR EMITTER SATURATION VOLTAGE (VOLTS)
1.0
IB, BASE CURRENT (mA)
IC, COLLECTOR CURRENT (AMPS)
Figure 5. Collector Emitter Saturation Voltage versus Collector Current
Figure 6. Collector Emitter Saturation Voltage versus Collector Current
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3
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