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Part: MMBT918L
Category:
Description: Small Signal NPN
Company: ON Semiconductor
Datasheet: Download MMBT918L datasheet File size : 209 kB
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Datasheet text preview:
MMBT918LT1 VHF/UHF Transistor
NPN Silicon
Features
· Pb-Free Package is Available
MAXIMUM RATINGS
Rating Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous Symbol VCEO VCBO VEBO IC Value 15 30 3.0 50 Unit Vdc Vdc Vdc mAdc
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COLLECTOR 3 1 BASE 2 EMITTER
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR- 5 Board, (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 Rq J A PD 556 300 2.4 Rq J A TJ, Tstg 417 - 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C
1 2 3
MARKING DIAGRAM
M3B SOT-23 (TO-236AF) CASE 318 Style 6 M3B = Specific Device Code
ORDERING INFORMATION
Device MMBT918LT1 MMBT918LT1G Package SOT-23 SOT-23 (Pb-Free) Shipping 3000 / Tape & Reel 3000 / Tape & Reel
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2004
1
May, 2004 - Rev. 4
Publication Order Number: MMBT918LT1/D
MMBT918LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage (IC = 3.0 mAdc, IB = 0) Collector - Base Breakdown Voltage (IC = 1.0 mAdc, IE = 0) Emitter - Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 15 Vdc, IE = 0) ON CHARACTERISTICS DC Current Gain (IC = 3.0 mAdc, VCE = 1.0 Vdc) Collector - Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) Base - Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) SMALL- SIGNAL CHARACTERISTICS Current - Gain - Bandwidth Product (IC = 4.0 mAdc, VCE = 10 Vdc, f = 100 MHz) Output Capacitance (VCB = 0 Vdc, IE = 0, f = 1.0 MHz) (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Noise Figure (IC = 1.0 mAdc, VCE = 6.0 Vdc, RS = 50 W, f = 60 MHz) (Figure 1) Power Output (IC = 8.0 mAdc, VCB = 15 Vdc, f = 500 MHz) Common-Emitter Amplifier Power Gain (IC = 6.0 mAdc, VCB = 12 Vdc, f = 200 MHz) fT Co b o - - Ci b o NF Pout Gpe - - 30 11 3.0 1.7 2.0 6.0 - - pF dB mW dB 600 - MHz pF hFE VCE(sat) VBE(sat) 20 - - - 0.4 1.0 - Vdc Vdc V(BR)CEO V(BR)CBO V(BR)EBO ICBO 15 30 3.0 - - - - 50 Vdc Vdc Vdc nAdc Symbol Min Max Unit
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2
MMBT918LT1
VBB EXTERNAL 100 k 1000 pF BYPASS VCC
0.018 mF 0.018 mF 3 0.018 mF NF TEST CONDITIONS IC = 1.0 mA VCE = 6.0 VOLTS RS = 50 W f = 60 MHz Gpe TEST CONDITIONS IC = 6.0 mA VCE = 12 VOLTS f = 200 MHz C G 0.018 mF 50 W
RF VM
Figure 1. NF, Gpe Measurement Circuit 20-200
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3
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