Details, datasheet, quote on part number: MMSF5N02HD
PartMMSF5N02HD
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel
DescriptionTmos Single N-channel Field Effect Transistor
CompanyON Semiconductor
DatasheetDownload MMSF5N02HD datasheet
Cross ref.Similar parts: FDS4488, FDS6612A, FDS9412, HUF76131SK8, NDS8425, SI4416DY
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Features, Applications

These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain­to­source diode has a very low reverse recovery time. MiniMOSt devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc­dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life Logic Level Gate Drive ­ Can Be Driven by Logic ICs Miniature SO­8 Surface Mount Package ­ Saves Board Space Diode Is Characterized for Use In Bridge Circuits Diode Exhibits High Speed, With Soft Recovery IDSS Specified at Elevated Temperature Avalanche Energy Specified Mounting Information for SO­8 Package Provided

Rating Drain­to­Source Voltage Drain­to­Gate Voltage (RGS 1.0 M) Gate­to­Source Voltage ­ Continuous Drain Current ­ Continuous = 25°C Drain Current ­ Continuous = 100°C Drain Current ­ Single Pulse (tp 10 µs) Total Power Dissipation = 25°C (Note 1.) Operating and Storage Temperature Range Single Pulse Drain­to­Source Avalanche Energy ­ Starting = 25°C (VDD = 20 Vdc, VGS = 5.0 Vdc, Peak = 15 Apk, = 6.0 mH, 25 ) Thermal Resistance ­ Junction to Ambient (Note 1.) Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds Symbol VDSS VDGR VGS ID IDM PD TJ, Tstg EAS Value 150 675 Unit Vdc Adc Apk Watts °C mJ

SO­8 CASE 751 STYLE WW = Location Code = Year = Work Week
1. Mounted on 2 square FR4 board (1 sq. 2 oz. Cu 0.06 thick single sided), 10 sec. max.
Preferred devices are recommended choices for future use and best overall value.

Characteristic OFF CHARACTERISTICS Drain­to­Source Breakdown Voltage (VGS = 0 Vdc, = 250 µAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 20 Vdc, VGS = 0 Vdc) (VDS = 20 Vdc, VGS = 0 Vdc, = 125°C) Gate­Body Leakage Current (VGS ± 20 Vdc, VDS 0) ON CHARACTERISTICS (Note 2.) Gate Threshold Voltage (VDS = VGS, = 250 µAdc) Temperature Coefficient (Negative) Static Drain­to­Source On­Resistance (VGS = 10 Vdc, = 5.0 Adc) (VGS = 4.5 Vdc, = 2.5 Adc) Forward Transconductance (VDS = 15 Vdc, = 2.5 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (Note 3.) Turn­On Delay Time Rise Time Turn­Off Delay Time Fall Time Turn­On Delay Time Rise Time Turn­Off Delay Time Fall Time Gate Charge S Fi See Figure 8 (VDS = 16 Vdc, = 5.0 Adc, VGS = 10 Vdc) (VDD = 10 Vdc, = 5.0 Adc, VGS = 10 Vdc, Vdc 6.0 ) (VDD = 10 Vdc, = 5.0 Adc, VGS Vdc, Vdc 6.0 ) td(on) tr td(off) tf td(on) tr td(off) Q2 Q3 SOURCE­DRAIN DIODE CHARACTERISTICS Forward On­Voltage (Note 2.) (IS = 5.0 Adc, VGS = 0 Vdc) (IS = 5.0 Adc, VGS = 0 Vdc, = 125°C) VSD ­ trr (IS = 5.0 Adc, VGS = 0 Vdc, dIS/dt = 100 A/µs) Reverse Recovery Stored Charge 2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2%. 3. Switching characteristics are independent of operating junction temperature. ta tb QRR µC ns Vdc nC ns (VDS 16 Vd Vdc, VGS = 0 Vdc, = 1.0 MHz) Ciss Coss Crss pF VGS(th) 1.0 ­ RDS(on) ­ gFS Mhos Vdc mV/°C Ohm V(BR)DSS 20 ­ IDSS ­ IGSS nAdc Vdc mV/°C µAdc Symbol Min Typ Max Unit

RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)
Figure 4. On­Resistance versus Drain Current and Gate Voltage
Figure 6. Drain­To­Source Leakage Current versus Voltage

 

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