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Part: MR4027

Category:
 Discrete
   -> Diodes & Rectifiers
     -> Protection

Description: Automotive Transient Voltage Suppressor: 20 V - 27 V

Company: ON Semiconductor

Datasheet: Download MR4027 datasheet     File size : 53 kB

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Datasheet text preview:
MR4027 Automotive Transient Voltage Suppressor
20 V ­ 27 V
Designed for Automotive Applications (Alternator) requiring R e v e r s e Avalanche Capability for use as Transient Voltage Suppressor. Developed to suppress transients in automotive systems, this device operates in the forward mode as Standard Rectifier or in Reverse as Transient Voltage Suppressor for Centralized Protection. For further information referring to Mounting or Operating C o n d i t i o n s , contact your nearest ON Semiconductor Sales Representative.
Mechanical Characteristics http://onsemi.com
· Finish: 100% Tin Plated
All External Surfaces are Corrosion Resistant · Weight: 2.6 Grams (Approximately)
Packaging/Labeling
N SUFFIX (Anode to Cup) P SUFFIX (Cathode to Cup) CASE 193A
· Two Sealed Bags into a Cardboard Box · Device Number Labeled on the Bag
Marking
MARKING DIAGRAM
· The Devices are Laser Marked on the Epoxy Surface
MAXIMUM RATING
Rating DC Blocking Voltage Average Forward Current (Single Phase, Resistive Load, TC = 185°C) Peak Repetitive Reverse Surge Current (Time Constant = 10 ms, TC = 25°C) (Time Constant = 80 ms, TC = 25°C) Non­Repetitive Peak Surge Current (Halfwave, Single Phase, 50 Hz) Storage Temperature Range Maximum Operating Junction Temperature Symbol VR IO Value 18 40 Unit Volts Amps NL = Location Code 1N or 1P = Device Code and Polarity YY = Year WW = Work Week ### = Assembly Lot Number
Amps IRSM IRSM IFSM Tstg TJ 110 50 500 ­40 to +200 200 Amps °C °C
ORDERING INFORMATION
Device MR4027N MR4027P Package Button Can Button Can Shipping 5000 Units/Box 5000 Units/Box
© Semiconductor Components Industries, LLC, 2000
1
October, 2000 ­ Rev. 1
Publication Order Number: MR4027/D
MR4027
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance Junction to Case Symbol R J C Value 0.4 Unit °C/W
ELECTRICAL CHARACTERISTICS
Characteristic Instantaneous Forward Voltage (Note 1.) (IF = 100 Amps, TC = 25°C) Reverse Current (Note 1.) (VR = 16 Vdc, TC = 25°C) Breakdown Voltage (Note 1.) (IR = 100 mA, TC = 25°C) Breakdown Voltage (IR = 80 Amps, TC = 25°C, PW = 80 ms) (IR = 80 Amps, TC = 85°C, PW = 80 ms) Breakdown Voltage Temperature Coefficient Forward Voltage Temperature Coefficient (IF = 10 mA) 1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2%. *Typical IF, INSTANTANEOUS FORWARD CURRENT (A) Symbol vF IR V(BR) V(BR) ­ ­ V(BR)TC VFTC 0.095* ­2* 35 37 %/°C mV/°C Min ­ ­ 20 Max 1.1 1.0 27 Unit Volts mA Volts Volts
1000 IR, REVERSE CURRENT ( m A) 100 10 1 0.1 0.01 25°C TJ = 200°C 150°C 100°C
1000
100
TJ = 200°C 10
0.001 0 5 10 15 20 VR, REVERSE VOLTAGE (V)
1 500 600
150°C
100°C 700
25°C 800 900 1000
VF, INSTANTANEOUS FORWARD VOLTAGE (mV)
Figure 1. Typical Reverse Current
1000 TC = 25°C 10000 PRSM, PEAK REVERSE POWER (W)
Figure 2. Typical Forward Voltage
IRSM, PEAK REVERSE CURRENT (A)
TC = 25°C
100
1000
10 1 10 100 1000 t, TIME CONSTANT (mS)
100 1 10 100 1000 t, TIME CONSTANT (mS)
Figure 3. Maximum Peak Reverse Current
Figure 4. Maximum Peak Reverse Power
http://onsemi.com
2
MR4027
IF(avg), AVERAGE FORWARD CURRENT (A)
W RSM, PEAK REVERSE ENERGY (J)
1000 TC = 25°C 100
60 50 40 30 20 10 0 100 120 140 160 180 200 220 TC, CASE TEMPERATURE (°C)
10
1 1 10 100 1000 t, TIME CONSTANT (mS)
Figure 5. Maximum Reverse Energy
Figure 6. Maximum Current Rating
10000 9000 C, CAPACITANCE (pF) 8000 2 Ohms 7000 6000 5000 4000 0 5 10 15 20 VR, REVERSE VOLTAGE (V) 0 ­ 150 V x mF MR4027N MR4027P di/dt Limitation 100 mH
Figure 8. Load Dump Test Circuit
Figure 7. Typical Capacitance
100 di/dt < 1 A/ms 80
60 (%) 40 20 0 0 0.1 t (50%) t (37%) 0.2 t (10%) t, TIME (S) 0.3 0.4 0.5 t (37%) = Time Constant t (50%) = 0.7 t (37%) t (10%) = 2.3 t (37%)
Figure 9. Load Dump Pulse Current
http://onsemi.com
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