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Details, datasheet, quote on part number:MTB29N15ET4
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| Part: | MTB29N15ET4 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs |
| Description: | Power MOSFET 29 Amps, 150 Volts, Package: D2PAK, Pins=3 |
| Company: | ON Semiconductor |
| Datasheet: | Download MTB29N15ET4 datasheet File size : 119 kB |
| Request For quote: | Find where to buy MTB29N15ET4
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Datasheet text preview:
MTB29N15E
Preferred Device
Power MOSFET 29 Amps, 150 Volts
NChannel D2PAK
This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls. These devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. · Avalanche Energy Specified · SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode · Diode is Characterized for Use in Bridge Circuits · IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating DraintoSource Voltage DraintoGate Voltage (RGS = 1.0 M) GatetoSource Voltage Continuous NonRepetitive (tp 10 ms) Drain Current Continuous Drain Current Continuous @ 100°C Drain Current Single Pulse (tp 10 µs) Total Power Dissipation Derate above 25°C Total Power Dissipation @ TA = 25°C (Note 1.) Operating and Storage Temperature Range Single Pulse DraintoSource Avalanche Energy Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 29 Apk, L = 1.0 mH, RG = 25 ) Thermal Resistance Junction to Case Junction to Ambient Junction to Ambient (Note 1.) Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds Symbol VDSS VDGR VGS VGSM ID ID IDM PD Value 150 150 ± 20 ± 40 29 19 102 125 1.0 2.5 55 to 150 421 1 Gate T29N15E Y WW Unit Vdc Vdc 4 Vdc Vpk Adc Apk Watts W/°C Watts °C mJ T29N15E YWW 1 2 3 D2PAK CASE 418B STYLE 2
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29 AMPERES 150 VOLTS RDS(on) = 70 m
NChannel D
G S
MARKING DIAGRAM & PIN ASSIGNMENT
4 Drain
TJ, Tstg EAS
°C/W RJC RJA RJA TL 1.0 62.5 50 260 °C
2 Drain
3 Source
= Device Code = Year = Work Week
ORDERING INFORMATION
Device MTB29N15E MTB29N15ET4 Package D2PAK D2PAK Shipping 50 Units/Rail 800/Tape & Reel
1. When surface mounted to an FR4 board using the minimum recommended pad size.
Preferred devices are recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2000
1
November, 2000 Rev. 2
Publication Order Number: MTB29N15E/D
MTB29N15E
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS DraintoSource Breakdown Voltage (VGS = 0 Vdc, ID = 0.25 mAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 150 Vdc, VGS = 0 Vdc) (VDS = 150 Vdc, VGS = 0 Vdc, TJ = 125°C) GateBody Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (Note 2.) Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) Threshold Temperature Coefficient (Negative) Static DraintoSource OnResistance (VGS = 10 Vdc, ID = 14.5 Adc) DraintoSource OnVoltage (VGS = 10 Vdc) (ID = 29 Adc) (ID = 14.5 Adc, TJ = 125°C) Forward Transconductance (VDS = 8.6 Vdc, ID = 14.5 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (Note 3.) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Gate Charge (VDS = 120 Vdc, ID = 29 Adc, VGS = 10 Vdc) (VDD = 75 Vdc, ID = 29 Adc, VGS = 10 Vdc, 10 Vdc RG = 9.1 ) td(on) tr td(off) tf QT Q1 Q2 Q3 SOURCEDRAIN DIODE CHARACTERISTICS Forward OnVoltage (IS = 29 Adc, VGS = 0 Vdc) (IS = 29 Adc, VGS = 0 Vdc, TJ = 125°C) Reverse Recovery Time (IS = 29 Adc, VGS = 0 Vdc, 29 Adc Vdc dIS/dt = 100 A/µs) Reverse Recovery Stored Charge INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from the contact screw on tab to center of die) (Measured from the drain lead 0.25 from package to center of die) Internal Source Inductance (Measured from the source lead 0.25 from package to source bond pad) 2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2%. 3. Switching characteristics are independent of operating junction temperature. LD LS 7.5 3.5 4.5 nH trr ta tb Q RR VSD 0.92 0.84 174 126 48 1.4 1.3 µC ns Vdc 19 95 90 85 83 12 37 23 40 190 180 170 120 nC ns (VDS = 25 Vd VGS = 0 Vdc, 25 Vdc, Vd f = 1.0 MHz) Ciss Coss Cr s s 2300 450 130 3220 630 260 pF VGS(th) 2.0 RDS(on) VDS(on) gFS 10 20 2.4 2.1 mhos 0.054 0.07 Vdc 2.7 5.4 4.0 Vdc mV/°C Ohms V(BR)DSS 150 IDSS IGSS 10 100 100 nAdc 151 Vdc mV/°C µAdc Symbol Min Typ Max Unit
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MTB29N15E
TYPICAL ELECTRICAL CHARACTERISTICS
60 60 ID, DRAIN CURRENT (AMPS) 50 40 30 20 10 9 10 0 2 3 TJ = 100°C -55°C 4 5 6 7 8 25°C
ID , DRAIN CURRENT (AMPS)
VGS = 10 V 9V 50 TJ = 25°C 8V 40 30 20 10 0 0 1 2 3 4 5
7V
6.5 V
VDS 10 V
6V
5.5 V 5V 4.5 V 4V 6 7 8 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)
Figure 2. Transfer Characteristics
0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 0
VGS = 10 V TJ = 100°C
0.07 0.065 0.06 0.055 0.05 0.045 0.04 0 10 20 40 30 ID, DRAIN CURRENT (AMPS) 50 60 TJ = 25°C VGS = 10 V 15 V
25°C
-55°C
10
20
30
40
50
60
ID, DRAIN CURRENT (AMPS)
Figure 3. OnResistance versus Drain Current and Temperature
2.25 2.0 1.75 1.5 1.25 1.0 0.75 0.5 0.25 0 -50 -25 0 25 50 75 100 125 150 0.1 0 VGS = 10 V ID = 14.5 A IDSS , LEAKAGE (nA) 100 1000
Figure 4. OnResistance versus Drain Current and Gate Voltage
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (NORMALIZED)
VGS = 0 V
TJ = 125°C 100°C
10
25°C
1
20
TJ, JUNCTION TEMPERATURE (°C)
60 80 40 100 120 140 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
160
Figure 5. OnResistance Variation with Temperature
Figure 6. DrainToSource Leakage Current versus Voltage
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