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Details, datasheet, quote on part number:MTB2N60E
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| Part: | MTB2N60E |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel |
| Description: | N-channel Enhancement-mode Silicon Gate |
| Company: | ON Semiconductor |
| Datasheet: | Download MTB2N60E datasheet File size : 278 kB |
| Request For quote: | Find where to buy MTB2N60E
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Datasheet text preview:
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTB2N60E/D
TM Data Sheet TMOS E-FET.TM High Energy Power FET D2PAK for Surface Mount
Designer's
MTB2N60E
Motorola Preferred Device
NChannel EnhancementMode Silicon Gate
T h i s high voltage MOSFET uses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over time. In addition, this advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. · Robust High Voltage Termination · Avalanche Energy Specified · SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode · Diode is Characterized for Use in Bridge Circuits · IDSS and VDS(on) Specified at Elevated Temperature MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating DraintoSource Voltage DraintoGate Voltage (RGS = 1.0 M) GatetoSource Voltage -- Continuous -- NonRepetitive (tp 10 ms) Drain Current -- Continuous -- Continuous @ 100°C -- Single Pulse (tp 10 µs) Total Power Dissipation @ 25°C Derate above 25°C Total Power Dissipation @ TA = 25°C (1) Operating and Storage Temperature Range Single Pulse DraintoSource Avalanche Energy -- Starting TJ = 25°C (VDD = 50 Vdc, VGS = 10 Vdc, Peak IL = 2.0 Apk, L = 95 mH, RG = 25 ) Thermal Resistance -- Junction to Case -- Junction to Ambient -- Junction to Ambient (1)
TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHM
®
D
G CASE 418B02, Style 2 D2PAK S
Symbol VDSS VDGR VGS VGSM ID ID IDM PD
Value 600 600 ± 20 ± 40 2.0 1.3 7.0 50 0.4 2.5 55 to 150 190 2.5 62.5 50 260
Unit Vdc Vdc Vdc Vpk Adc Apk Watts W/°C Watts °C mJ °C/W
TJ, Tstg EAS RJC RJA RJA TL
Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds (1) When surface mounted to an FR4 board using the minimum recommended pad size.
°C
Designer's Data for "Worst Case" Conditions -- The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves -- representing boundaries on device characteristics -- are given to facilitate "worst case" design.
EFET and Designer's are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
©Motorola TMOS Power MOSFET Transistor Device Data Motorola, Inc. 1996
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MTB2N60E
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS DraintoSource Breakdown Voltage (VGS = 0 Vdc, ID = 250 µAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 600 Vdc, VGS = 0 Vdc) (VDS = 480 Vdc, VGS = 0 Vdc, TJ = 125°C) GateBody Leakage Current (VGS = ± 20 Vdc, VDS = 0) ON CHARACTERISTICS (1) Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) Threshold Temperature Coefficient (Negative) Static DraintoSource OnResistance (VGS = 10 Vdc, ID = 1.0 Adc) DraintoSource OnVoltage (VGS = 10 Vdc, ID = 2.0 Adc) (VGS = 10 Vdc, ID = 1.0 Adc, TJ = 125°C) Forward Transconductance (VDS = 50 Vdc, ID = 1.0 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (2) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Gate Charge (See Figure 8) (VDS = 400 Vdc, ID = 2.0 Adc, VGS = 10 Vdc) (VDD = 300 Vdc, ID = 2.0 Adc, VGS = 10 Vdc, RG = 18 ) td(on) tr td(off) tf QT Q1 Q2 Q3 SOURCEDRAIN DIODE CHARACTERISTICS Forward OnVoltage Reverse Recovery Time INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from the drain lead 0.25 from package to center of die) Internal Source Inductance (Measured from the source lead 0.25 from package to source bond pad) (1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperature. LD -- LS -- 7.5 -- 3.5 -- nH nH (IS = 2.0 Adc, VGS = 0 Vdc) (IS = 2.0 Adc, VGS = 0 Vdc, TJ = 125°C) (IS = 2.0 Adc, VGS = 0 Vdc, dIS/dt = 100 A/µs) VSD trr -- 340 -- -- -- 1.0 0.9 1.6 -- Vdc ns -- -- -- -- -- -- -- -- 12 21 30 24 13 2.0 6.0 5.0 -- -- -- -- -- -- -- -- nC ns (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Ciss Coss Crss -- -- -- 435 100 20 -- -- -- pF VGS(th) 2.0 -- RDS(on) VDS(on) -- -- gFS 1.0 -- -- -- 8.2 8.4 -- mhos -- 3.1 8.5 3.0 4.0 -- 3.8 Vdc mV/°C Ohm Vdc V(BR)DSS 600 -- IDSS -- -- IGSS -- -- -- -- 0.25 1.0 100 nAdc -- 480 -- -- Vdc mV/°C µAdc Symbol Min Typ Max Unit
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Motorola TMOS Power MOSFET Transistor Device Data
MTB2N60E
TYPICAL ELECTRICAL CHARACTERISTICS
4 ID , DRAIN CURRENT (AMPS) TJ = 25°C VGS = 10 V 8 7V ID , DRAIN CURRENT (AMPS) 6 VDS 10 V
3 6V 2 5.5 V 1 5V 0 0 4 8 12 16 20
4 TJ = 100°C 55°C 25°C 0 0 2 4 6 8 VGS, GATETOSOURCE VOLTAGE (VOLTS) 10
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VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
RDS(on) , DRAINTOSOURCE RESISTANCE (OHMS) RDS(on) , DRAINTOSOURCE RESISTANCE (OHMS)
Figure 2. Transfer Characteristics
12 VGS = 10 V 100°C
4.5 4.3 4.1 3.9 3.7 3.5 3.3 3.1 2.9 2.7 2.5 0 0.5 1 1.5 2 2.5 3 ID, DRAIN CURRENT (AMPS) 3.5 4 15 V VGS = 10 V TJ = 25°C
8 TJ = 25°C
4
55°C
0
0
1.5
3 ID, DRAIN CURRENT (AMPS)
4.5
6
Figure 3. OnResistance versus Drain Current and Temperature
1000 VGS = 10 V ID = 1 A 2 I DSS , LEAKAGE (nA) 100
Figure 4. OnResistance versus Drain Current and Gate Voltage
RDS(on) , DRAINTOSOURCE RESISTANCE (NORMALIZED)
2.5
VGS = 0 V TJ = 125°C 100°C
1.5
1
10
0.5
0 50
25
0 25 50 75 100 TJ, JUNCTION TEMPERATURE (°C)
125
150
1 0 100 300 500 200 400 VDS, DRAINTOSOURCE VOLTAGE (VOLTS) 600
Figure 5. OnResistance Variation with Temperature
Figure 6. DrainToSource Leakage Current versus Voltage
Motorola TMOS Power MOSFET Transistor Device Data
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