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Details, datasheet, quote on part number:MTB33N10E
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| Part: | MTB33N10E |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs |
| Description: | Replacement Part: NTB52N10, Package: D2PAK, Pins=3 |
| Company: | ON Semiconductor |
| Datasheet: | Download MTB33N10E datasheet File size : 116 kB |
| Request For quote: | Find where to buy MTB33N10E
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Datasheet text preview:
MTB33N10E
Preferred Device
Power MOSFET 33 Amps, 100 Volts
NChannel D2PAK
This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. · Avalanche Energy Specified · SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode · Diode is Characterized for Use in Bridge Circuits · IDSS and VDS(on) Specified at Elevated Temperature · Short Heatsink Tab Manufactured Not Sheared · Specially Designed Leadframe for Maximum Power Dissipation
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating DrainSource Voltage DrainGate Voltage (RGS = 1.0 M) GateSource Voltage Continuous NonRepetitive (tp 10 ms) Drain Current Continuous Drain Current Continuous @ 100°C Drain Current Single Pulse (tp 10 µs) Total Power Dissipation Derate above 25°C Total Power Dissipation @ TA = 25°C, when mounted with the minimum recommended pad size Operating and Storage Temperature Range Single Pulse DraintoSource Avalanche Energy Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, IL = 33 Apk, L = 1.000 mH, RG = 25 ) Thermal Resistance Junction to Case Junction to Ambient Junction to Ambient, when mounted with the minimum recommended pad size Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds Symbol VDSS VDGR VGS VGSM ID ID IDM PD Value 100 100 ± 20 ± 40 33 20 99 125 1.0 2.5 Unit Vdc Vdc 1 Vdc Vpk Adc Apk Watts W/°C Watts T33N10E YWW TJ, Tstg EAS 55 to 150 545 °C mJ 1 Gate T33N10E Y WW 2 Drain 3 Source 2 3 4 D2PAK CASE 418B STYLE 2
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33 AMPERES 100 VOLTS RDS(on) = 60 m
NChannel D
G S
MARKING DIAGRAM & PIN ASSIGNMENT
4 Drain
°C/W RJC RJA RJA TL 1.0 62.5 50 260 °C
= Device Code = Year = Work Week
ORDERING INFORMATION
Device MTB33N10E MTB33N10ET4 Package D2PAK D2PAK Shipping 50 Units/Rail 800/Tape & Reel
Preferred devices are recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2000
1
November, 2000 Rev. 3
Publication Order Number: MTB33N10E/D
MTB33N10E
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS DrainSource Breakdown Voltage (VGS = 0 Vdc, ID = 250 µAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 100 Vdc, VGS = 0 Vdc) (VDS = 100 Vdc, VGS = 0 Vdc, TJ = 25°C) GateBody Leakage Current (VGS = ± 20 Vdc, VDS = 0) ON CHARACTERISTICS (Note 1.) Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) Temperature Coefficient (Negative) Static DrainSource OnResistance (VGS = 10 Vdc, ID = 16.5 Adc) DrainSource OnVoltage (VGS = 10 Vdc) (ID = 33 Adc) (ID = 16.5 Adc, TJ = 25°C) Forward Transconductance (VDS = 8.0 Vdc, ID = 16.5 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 2.) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Gate Charge (See Figure 8) (VDS = 80 Vdc, ID = 33 Adc, VGS = 10 Vdc) 10 Vdc) (VDD = 50 Vdc, ID = 33 Adc, VGS = 10 Vdc, 10 Vdc RG = 9.1 ) td(on) tr td(off) tf QT Q1 Q2 Q3 SOURCEDRAIN DIODE CHARACTERISTICS Forward OnVoltage (Note 1.) (IS = 33 Adc, VGS = 0 Vdc) (IS = 33 Adc, VGS = 0 Vdc, TJ = 125°C) VSD trr (IS = 33 Adc, VGS = 0 Vdc, dIS/dt = 100 A/µs) Reverse Recovery Stored Charge INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from the drain lead 0.25 from package to center of die) Internal Source Inductance (Measured from the source lead 0.25 from package to source bond pad) 1. Pulse Test: Pulse Width 300 µs, Duty Cycle 2%. 2. Switching characteristics are independent of operating junction temperature. LD LS 4.5 7.5 nH nH ta tb Q RR 1.0 0.98 144 108 36 0.93 2.0 µC ns Vdc 18 164 48 83 52 12 32 24 40 330 100 170 110 nC ns (VDS = 25 Vd VGS = 0 Vdc, 25 Vdc, Vd f = 1.0 MHz) Ciss Coss Cr s s 1830 678 559 2500 1200 1100 pF VGS(th) 2.0 RDS(on) VDS(on) gFS 8.0 1.6 2.4 2.1 mhos 7.0 0.04 4.0 0.06 Vdc mV/°C Ohm Vdc V(BR)DSS 100 IDSS IGSS 10 100 100 nAdc 118 Vdc mV/°C µAdc Symbol Min Typ Max Unit
Reverse Recovery Time (See Fi Figure 14) 14)
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MTB33N10E
TYPICAL ELECTRICAL CHARACTERISTICS
90 80 I D , DRAIN CURRENT (AMPS) 70 60 50 40 30 20 10 0 0 1 2 3 4 5 6 7 8 90 VGS = 10 V 9V 8V I D , DRAIN CURRENT (AMPS) 80 70 60 50 40 30 20 10 10 0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 25°C 100°C VDS 10 V TJ = -55°C
TJ = 25°C
7V 6V 5V 9
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) 0.09 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0 6 12 -55°C 25°C VGS = 10 V TJ = 100°C RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) 0.053 0.051 0.049 0.047 0.045 0.043 0.041 0.039 0.037 5 11
Figure 2. Transfer Characteristics
TJ = 25°C
VGS = 10 V
15 V
18 24 30 36 42 48 ID, DRAIN CURRENT (AMPS)
54
60
66
17
23 35 41 29 47 ID, DRAIN CURRENT (AMPS)
53
59
65
Figure 3. OnResistance versus Drain Current and Temperature
2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 150 10 20 VGS = 10 V ID = 16.5 A I DSS , LEAKAGE (nA) 1000 10000
Figure 4. OnResistance versus Drain Current and Gate Voltage
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (NORMALIZED)
VGS = 0 V
TJ = 125°C
100°C 100 25°C
30
40
50
60
70
80
90
100
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. OnResistance Variation with Temperature
Figure 6. DrainToSource Leakage Current versus Voltage
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