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Details, datasheet, quote on part number:MTB3N120E
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| Part: | MTB3N120E |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs => N-Channel |
| Description: | 3 Amp D2pak Surface Mount Products, N-channel, VDSS 1200 |
| Company: | ON Semiconductor |
| Datasheet: | Download MTB3N120E datasheet File size : 330 kB |
| Request For quote: | Find where to buy MTB3N120E
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Datasheet text preview:
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTB3N120E/D
TM Data Sheet TMOS E-FET.TM High Energy Power FET D2PAK for Surface Mount
Designer's
MTB3N120E
Motorola Preferred Device
NChannel EnhancementMode Silicon Gate
The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities. This high voltage M O S F E T uses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over time. In addition, this advanced TMOS EFET is designed to withstand high energy in the avalanche and commutat i o n modes. This new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
TMOS POWER FET 3.0 AMPERES 1200 VOLTS RDS(on) = 5.0 OHM
®
D
G
· Avalanche Energy Capability Specified at Elevated Temperature S · Low Stored Gate Charge for Efficient Switching · Internal SourcetoDrain Diode Designed to Replace External Zener Transient Suppressor Absorbs High Energy in the Avalanche Mode · SourcetoDrain Diode Recovery time Comparable to Discrete Fast Recovery Diode * See App. Note AN1327 Very Wide Input Voltage Range; Offline Flyback Switching Power Supply MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating DrainSource Voltage DrainGate Voltage (RGS = 1.0 M) GateSource Voltage -- Continuous GateSource Voltage -- NonRepetitive (tp 10 ms) Drain Current -- Continuous @ 25°C Drain Current -- Continuous @ 100°C Drain Current -- Single Pulse (tp 10 µs) Total Power Dissipation @ TC = 25°C Derate above 25°C Total Power Dissipation @ TA = 25°C (1) Operating and Storage Temperature Range Single Pulse DraintoSource Avalanche Energy -- Starting TJ = 25°C (VDD = 100 Vdc, VGS = 10 Vdc, PEAK IL = 4.5 Apk, L = 10 mH, RG = 25 ) Thermal Resistance -- Junction to Case Thermal Resistance -- Junction to Ambient Thermal Resistance -- Junction to Ambient (1) Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds (1) When surface mounted to an FR4 board using the minimum recommended pad size. EFET and Designer's are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value. REV 1
CASE 418B02, Style 2 D2PAK
Symbol VDSS VDGR VGS VGSM ID ID IDM PD
Value 1200 1200 ± 20 ± 40 3.0 2.2 11 125 1.0 2.5 55 to 150 101 1.0 62.5 50 260
Unit Vdc Vdc Vdc Vpk Adc Apk Watts W/°C Watts °C mJ °C/W
TJ, Tstg EAS RJC RJA RJA TL
°C
© Motorola, Inc. 1995
Motorola TMOS Power MOSFET Transistor Device Data
1
MTB3N120E
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS DrainSource Breakdown Voltage (VGS = 0 Vdc, ID = 250 µAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 1200 Vdc, VGS = 0 Vdc) (VDS = 1200 Vdc, VGS = 0 Vdc, TJ = 125°C) GateBody Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (1) Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) Temperature Coefficient (Negative) Static DrainSource OnResistance (VGS = 10 Vdc, ID = 1.5 Adc) DrainSource OnVoltage (VGS = 10 Vdc) (ID = 3.0 Adc) (ID = 1.5 Adc, TJ = 125°C) Forward Transconductance (VDS = 15 Vdc, ID = 1.5 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (2) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Gate Charge (VDS = 600 Vdc, ID = 3.0 Adc, VGS = 10 Vdc) (VDD = 600 Vdc, ID = 3.0 Adc, VGS = 10 Vdc, RG = 9.1 ) td(on) tr td(off) tf QT Q1 Q2 Q3 SOURCEDRAIN DIODE CHARACTERISTICS Forward OnVoltage (1) (IS = 3.0 Adc, VGS = 0 Vdc) (IS = 3.0 Adc, VGS = 0 Vdc, TJ = 125°C) VSD -- -- trr (IS = 3.0 Adc, VGS = 0 Vdc, dIS/dt = 100 A/µs) Reverse Recovery Stored Charge INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from the drain lead 0.25 from package to center of die) Internal Source Inductance (Measured from the source lead 0.25 from package to source bond pad) (1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperature. LD LS -- -- 4.5 7.5 -- -- nH ta tb Q RR -- -- -- -- 0.80 0.65 394 118 276 2.11 1.0 -- -- -- -- -- µC ns Vdc -- -- -- -- -- -- -- -- 13.6 12.6 35.8 20.7 31 8.0 11 14 30 30 70 40 40 -- -- -- nC ns (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Ciss Coss Crss -- -- -- 2130 1710 932 2980 2390 1860 pF VGS(th) 2.0 -- RDS(on) VDS(on) -- -- gFS 2.5 -- -- 3.1 18.0 15.8 -- mhos -- 3.0 7.1 4.0 4.0 -- 5.0 Vdc mV/°C Ohm Vdc V(BR)DSS 1200 -- IDSS -- -- IGSS -- -- -- -- 10 100 100 nAdc -- 1.28 -- -- Vdc mV/°C µAdc Symbol Min Typ Max Unit
Reverse Recovery Time
2
Motorola TMOS Power MOSFET Transistor Device Data
MTB3N120E
TYPICAL ELECTRICAL CHARACTERISTICS
6 TJ = 25°C I D , DRAIN CURRENT (AMPS) 5 4 3 2 1 4V 0 0 6 12 18 24 30 0 3 3.4 3.8 4.2 4.6 5V VGS = 10 V I D , DRAIN CURRENT (AMPS) 6 VDS 10 V 5 4 3 2 1 TJ = 55°C 5.0 5.4 5.8 6.2 100°C
6V
25°C
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
RDS(on) , DRAINTOSOURCE RESISTANCE (OHMS) RDS(on) , DRAINTOSOURCE RESISTANCE (OHMS)
Figure 2. Transfer Characteristics
8 VGS = 10 V 6 TJ = 100°C
5.4 TJ = 25°C 5.0 VGS = 10 V
4
25°C
4.6
15 V 4.2
2 55°C 0
0
1
2
3
4
5
6
3.8
0
1
2
3
4
5
6
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
Figure 3. OnResistance versus Drain Current and Temperature
Figure 4. OnResistance versus Drain Current and Gate Voltage
RDS(on) , DRAINTOSOURCE RESISTANCE (NORMALIZED)
2.5 VGS = 10 V ID = 1.5 A
10,000 VGS = 0 V TJ = 125°C 1,000 I DSS , LEAKAGE (nA) 100°C 100 25°C 10
2.0
1.5
1.0
0.5
0 50
25
0
25
50
75
100
125
150
1
0
200
400
600
800
1000
1200
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 5. OnResistance Variation with Temperature
Figure 6. DrainToSource Leakage Current versus Voltage
Motorola TMOS Power MOSFET Transistor Device Data
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