|
Details, datasheet, quote on part number:MTB3N60E
| |
| Part: | MTB3N60E |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs => N-Channel |
| Description: | D2pak For Surface Mount N-channel Enhancement-mode Silicon Gate |
| Company: | ON Semiconductor |
| Datasheet: | Download MTB3N60E datasheet File size : 76 kB |
| Request For quote: | Find where to buy MTB3N60E
|
| |
Datasheet text preview:
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTB3N60E/D
Product Preview
TMOS E-FET.TM High Energy Power FET
D2PAK for Surface Mount NChannel EnhancementMode Silicon Gate
T h i s advanced high voltage TMOS EFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a draintosource diode with fast recovery time. Designed for high voltage, high speed s w i t c h i n g applications such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. · Avalanche Energy Capability Specified at Elevated Temperature · Low Stored Gate Charge for Efficient Switching · Internal SourcetoDrain Diode Designed to Replace External Zener Transient Suppressor -- Absorbs High Energy in the Avalanche Mode · SourcetoDrain Diode Recovery Time Comparable to Discrete Fast Recovery Diode
D
MTB3N60E
Motorola Preferred Device
TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS(on) = 2.2 OHMS
®
G S CASE 418B03, Style 2 D2PAK
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating DrainSource Voltage DrainGate Voltage (RGS = 1.0 M) GateSource Voltage -- Continuous GateSource Voltage -- Nonrepetitive Drain Current -- Continuous Drain Current -- Continuous @ 100°C Drain Current -- Pulsed Total Power Dissipation @ TC = 25°C Derate above 25°C Total Power Dissipation @ TA = 25°C(1) Operating and Storage Temperature Range Symbol VDSS VDGR VGS VGSM ID ID IDM PD Value 600 600 ± 20 ± 40 3.0 2.4 14 75 0.6 2.5 55 to 150 Unit Vdc Vdc Vdc Vpk Adc
Watts W/°C Watts °C
TJ, Tstg
UNCLAMPED DRAINTOSOURCE AVALANCHE CHARACTERISTICS (TJ < 150°C)
Single Pulse DraintoSource Avalanche Energy -- TJ = 25°C Single Pulse DraintoSource Avalanche Energy -- TJ = 100°C Repetitive Pulse DraintoSource Avalanche Energy WDSR(2) WDSR(3) 290 46 7.5 mJ
THERMAL CHARACTERISTICS
Thermal Resistance -- Junction to Case° Thermal Resistance -- Junction to Ambient° Thermal Resistance -- Junction to Ambient(1) Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds (1) When surface mounted to an FR4 board using the minimum recommended pad size (2) VDD = 50 V, ID = 3.0 A (3) Pulse Width and frequency is limited by TJ(max) and thermal response
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
RJC RJA RJA TL
1.67 62.5 50 260
°C/W
°C
EFET and Designer's are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
© Motorola TMOS Motorola, Inc. 1997
Power MOSFET Transistor Device Data
1
MTB3N60E
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS DraintoSource Breakdown Voltage (VGS = 0, ID = 250 µAdc) Zero Gate Voltage Drain Current (VDS = 600 V, VGS = 0) (VDS = 480 V, VGS = 0, TJ = 125°C) GateBody Leakage Current -- Forward (VGSF = 20 Vdc, VDS = 0) GateBody Leakage Current -- Reverse (VGSR = 20 Vdc, VDS = 0) ON CHARACTERISTICS* Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) (TJ = 125°C) Static DraintoSource OnResistance (VGS = 10 Vdc, ID = 1.5 A) DraintoSource OnVoltage (VGS = 10 Vdc) (ID = 3.0 A) (ID = 1.5 A, TJ = 100°C) Forward Transconductance (VDS = 15 Vdc, ID = 1.5 A) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS* TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Total Gate Charge GateSource Charge GateDrain Charge SOURCEDRAIN DIODE CHARACTERISTICS Forward OnVoltage Forward TurnOn Time Reverse Recovery Time INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from the contact screw on tab to center of die) (Measured from the drain lead 0.25 from package to center of die) Internal Source Inductance (Measured from the source lead 0.25 from package to source bond pad) * Pulse Test: Pulse Width = 300 µs, Duty Cycle 2.0%. ** Limited by circuit inductance. Ld -- -- Ls -- 3.5 4.5 7.5 -- -- -- nH (IS = 3 0 A di/d = 100 A/ ) 3.0 A, di/dt 100 A/µs) VSD ton trr -- -- -- -- ** 400 1.4 -- -- Vdc ns (VDS = 420 V, ID = 3 0 A 420 V 3.0 A, VGS = 10 V) 3.0 A, (VDD = 300 V, ID 3 0 A 300 V RL = 100 RG = 12 100 , 12 , VGS(on) = 10 V) ) td(on) tr td(off) tf Qg Qgs Qgd -- -- -- -- -- -- -- 23 34 58 35 28 5.0 17 -- -- -- -- 31 -- -- nC ns (VDS = 25 V, VGS = 0, 25 V 0 f = 1.0 MHz) Ciss Coss Cr s s -- -- -- 770 105 19 -- -- -- pF VGS(th) 2.0 1.5 RDS(on) VDS(on) -- -- gFS 1.5 -- -- -- 9.0 7.5 -- mhos -- -- -- 2.1 4.0 3.5 2.2 Ohms Vdc Vdc V(BR)DSS IDSS -- -- IGSSF IGSSR -- -- -- -- -- -- 10 100 100 100 nAdc nAdc 600 -- -- Vdc µAdc Symbol Min Typ Max Unit
2
Motorola TMOS Power MOSFET Transistor Device Data
MTB3N60E
PACKAGE DIMENSIONS
C E B
4
V
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.575 0.625 0.045 0.055 STYLE 2: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 14.60 15.88 1.14 1.40
A
1 2 3
S
T
SEATING PLANE
K G D 3 PL 0.13 (0.005) H
M
J
DIM A B C D E G H J K S V
TB
M GATE DRAIN SOURCE DRAIN
CASE 418B03 ISSUE C
Motorola TMOS Power MOSFET Transistor Device Data
3
|
|
